公开(公告)号：US11031215B2

公开(公告)日：2021-06-08

申请号：US16584095

申请日：2019-09-26

Applicant: Lam Research Corporation

Inventor： John Stephen Drewery ,  Tom A. Kamp ,  Haoquan Yan ,  John Edward Daugherty ,  Ali Sucipto Tan ,  Ming-Kuei Tseng ,  Bruce Edmund Freeman

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  C23C16/02 ,  C23C16/455 ,  C23C16/44 ,  H01L21/683

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

公开(公告)号：US12087561B2

公开(公告)日：2024-09-10

申请号：US18329791

申请日：2023-06-06

Applicant: Lam Research Corporation

Inventor： John Stephen Drewery ,  Tom A. Kamp ,  Haoquan Yan ,  John Edward Daugherty ,  Ali Sucipto Tan ,  Ming-Kuei Tseng ,  Bruce Edmund Freeman

IPC: H01J37/32 ,  C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32862 ,  C23C16/0236 ,  C23C16/4405 ,  C23C16/45544 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/67069 ,  H01J37/3211 ,  H01J37/32715 ,  H01J2237/1825 ,  H01J2237/186 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01L21/02164 ,  H01L21/6833

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.