公开(公告)号：US11170997B2

公开(公告)日：2021-11-09

申请号：US16845746

申请日：2020-04-10

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Naveed Ansari ,  Yoshie Kimura ,  Si-Yi Yi Li ,  Kazi Sultana ,  Radhika Mani ,  Duming Zhang ,  Haseeb Kazi ,  Chen Xu ,  Mitchell Brooks ,  Ganesh Upadhyaya

IPC: H01L21/02 ,  H01L21/473 ,  H01L21/033 ,  H01L21/768 ,  H01L21/308 ,  H01L29/78

Abstract: Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

公开(公告)号：US20210287909A1

公开(公告)日：2021-09-16

申请号：US17200526

申请日：2021-03-12

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Tom A. Kamp ,  Yoshie Kimura ,  Duming Zhang ,  Chen Xu ,  John Drewery ,  Alex Paterson

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

Abstract: A plasma processing system includes a chamber having a coil disposed above a dielectric window for providing radio frequency power to the processing region. An etch gas delivery system is coupled to gas sources used for a first etch of a material. A liquid delivery system includes a source of liquid precursor, a liquid flow controller, and a vaporizer. A controller activates the etch gas delivery system to perform the first etch and activates the liquid delivery system to perform an atomic layer passivation (ALP) process after the first etch to coat features with a conformal film of passivation. Each time the ALP process is completed a single atomic monolayer of the conformal film of passivation is formed. The controller activates the etch gas delivery system to perform a second etch, with the conformal film of passivation protecting the mask and sidewalls of the features during the second etch.

公开(公告)号：US10734238B2

公开(公告)日：2020-08-04

申请号：US15820108

申请日：2017-11-21

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Yoshie Kimura ,  Duming Zhang ,  Chen Xu ,  Ganesh Upadhyaya ,  Mitchell Brooks

IPC: H01L21/3065 ,  H01L21/02 ,  C23C16/455 ,  H01L21/033 ,  H01L21/308

Abstract: Methods and apparatuses for critical dimension (CD) control of substrate features using integrated atomic layer deposition (ALD) and etch processes are described herein. Methods include etching to form a mask pattern of features on a substrate having a width that is less than a desired width of structures to be subsequently formed by the mask pattern of features, conformally depositing a passivation layer by ALD that increases the width of the mask pattern of features to the desired width, and etching a layer of the substrate to a desired depth to form the plurality of structures having the desired width.

公开(公告)号：US20200243326A1

公开(公告)日：2020-07-30

申请号：US16845746

申请日：2020-04-10

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Naveed Ansari ,  Yoshie Kimura ,  Si-Yi Yi Li ,  Kazi Sultana ,  Radhika Mani ,  Duming Zhang ,  Haseeb Kazi ,  Chen Xu ,  Mitchell Brooks ,  Ganesh Upadhyaya

IPC: H01L21/02 ,  H01L21/473 ,  H01L21/033 ,  H01L21/768 ,  H01L21/308 ,  H01L29/78

Abstract: Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

公开(公告)号：US11211253B2

公开(公告)日：2021-12-28

申请号：US16946529

申请日：2020-06-25

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Yoshie Kimura ,  Duming Zhang ,  Chen Xu ,  Ganesh Upadhyaya ,  Mitchell Brooks

IPC: H01L21/3065 ,  H01L21/02 ,  C23C16/455 ,  H01L21/033 ,  H01L21/308

Abstract: Methods and apparatuses for critical dimension (CD) control of substrate features using integrated atomic layer deposition (ALD) and etch processes are described herein. Methods include etching to form a mask pattern of features on a substrate having a width that is less than a desired width of structures to be subsequently formed by the mask pattern of features, conformally depositing a passivation layer by ALD that increases the width of the mask pattern of features to the desired width, and etching a layer of the substrate to a desired depth to form the plurality of structures having the desired width.

公开(公告)号：US10950454B2

公开(公告)日：2021-03-16

申请号：US15669871

申请日：2017-08-04

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Tom A. Kamp ,  Yoshie Kimura ,  Duming Zhang ,  Chen Xu ,  John Drewery ,  Alex Paterson

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

Abstract: A method for etching a substrate includes performing, in a plasma chamber, a first etch of a substrate material using a plasma etch process. The first etch forms features to a first depth in the material. Following the first etch, the method includes performing, in the plasma chamber without removing the substrate from the chamber, an atomic layer passivation (ALP) process to deposit a conformal film of passivation over the mask and the features formed during the first etch. The ALP process uses a vapor from a liquid precursor to form passivation over the features and the mask. The method further includes performing, in the plasma chamber, a second etch of the material using the plasma etch process. The conformal film of passivation is configured to protect the mask and sidewalls of the features during the second etch. A plasma processing system also is described.

公开(公告)号：US20200328087A1

公开(公告)日：2020-10-15

申请号：US16946529

申请日：2020-06-25

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Yoshie Kimura ,  Duming Zhang ,  Chen Xu ,  Ganesh Upadhyaya ,  Mitchell Brooks

IPC: H01L21/3065 ,  H01L21/02 ,  C23C16/455 ,  H01L21/033 ,  H01L21/308

Abstract: Methods and apparatuses for critical dimension (CD) control of substrate features using integrated atomic layer deposition (ALD) and etch processes are described herein. Methods include etching to form a mask pattern of features on a substrate having a width that is less than a desired width of structures to be subsequently formed by the mask pattern of features, conformally depositing a passivation layer by ALD that increases the width of the mask pattern of features to the desired width, and etching a layer of the substrate to a desired depth to form the plurality of structures having the desired width.

公开(公告)号：US10658174B2

公开(公告)日：2020-05-19

申请号：US15820110

申请日：2017-11-21

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Naveed Ansari ,  Yoshie Kimura ,  Si-Yi Yi Li ,  Kazi Sultana ,  Radhika Mani ,  Duming Zhang ,  Haseeb Kazi ,  Chen Xu ,  Mitchell Brooks ,  Ganesh Upadhyaya

IPC: H01L21/02 ,  H01L21/473 ,  H01L21/033 ,  H01L21/768 ,  H01L21/308 ,  H01L29/78

Abstract: Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

公开(公告)号：US20190157095A1

公开(公告)日：2019-05-23

申请号：US15820108

申请日：2017-11-21

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Yoshie Kimura ,  Duming Zhang ,  Chen Xu ,  Ganesh Upadhyaya ,  Mitchell Brooks

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/033 ,  C23C16/455

Abstract: Methods and apparatuses for critical dimension (CD) control of substrate features using integrated atomic layer deposition (ALD) and etch processes are described herein. Methods include etching to form a mask pattern of features on a substrate having a width that is less than a desired width of structures to be subsequently formed by the mask pattern of features, conformally depositing a passivation layer by ALD that increases the width of the mask pattern of features to the desired width, and etching a layer of the substrate to a desired depth to form the plurality of structures having the desired width.

公开(公告)号：US20190157066A1

公开(公告)日：2019-05-23

申请号：US15820110

申请日：2017-11-21

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Naveed Ansari ,  Yoshie Kimura ,  Si-Yi Yi Li ,  Kazi Sultana ,  Radhika Mani ,  Duming Zhang ,  Haseeb Kazi ,  Chen Xu ,  Mitchell Brooks ,  Ganesh Upadhyaya

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/033 ,  H01L21/473

Abstract: Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.