公开(公告)号：US11170997B2

公开(公告)日：2021-11-09

申请号：US16845746

申请日：2020-04-10

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Naveed Ansari ,  Yoshie Kimura ,  Si-Yi Yi Li ,  Kazi Sultana ,  Radhika Mani ,  Duming Zhang ,  Haseeb Kazi ,  Chen Xu ,  Mitchell Brooks ,  Ganesh Upadhyaya

IPC: H01L21/02 ,  H01L21/473 ,  H01L21/033 ,  H01L21/768 ,  H01L21/308 ,  H01L29/78

Abstract: Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

公开(公告)号：US09972502B2

公开(公告)日：2018-05-15

申请号：US14851768

申请日：2015-09-11

Applicant: LAM RESEARCH CORPORATION

Inventor： Jae Ho Lee ,  Changwoo Lee ,  Phil Friddle ,  Stefan Schmitz ,  Naveed Ansari ,  Michael Goss ,  Noel Sun

IPC: H01L21/311 ,  H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/033 ,  H01L21/02 ,  H01L21/283 ,  H01J37/32 ,  H01L21/308 ,  H01L21/28

CPC classification number: H01L21/31144 ,  H01J37/32366 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/0337 ,  H01L21/28132 ,  H01L21/28141 ,  H01L21/283 ,  H01L21/3086 ,  H01L21/31116

Abstract: A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate and etching the mandrel layer to form a plurality of mandrels. The method further includes, without removing the substrate from within the substrate processing chamber and subsequent to etching the mandrel layer, depositing a thin spacer layer such that the thin spacer layer is formed on upper surfaces of the plurality of mandrels, sidewalls of the plurality of mandrels, and portions of the substrate between the sidewalls of the plurality of mandrels, subsequent to depositing the thin spacer layer, etching the thin spacer layer to remove the thin spacer layer from the upper surfaces of the mandrels and the portions of the substrate between the sidewalls of the plurality of mandrels such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains, and, subsequent to etching the thin spacer layer from the upper surfaces of the mandrels and the portions of the substrate between the sidewalls of the plurality of mandrels, etching the plurality of mandrels to remove the plurality of mandrels from the substrate such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains on the substrate.

公开(公告)号：US20200243326A1

公开(公告)日：2020-07-30

申请号：US16845746

申请日：2020-04-10

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Naveed Ansari ,  Yoshie Kimura ,  Si-Yi Yi Li ,  Kazi Sultana ,  Radhika Mani ,  Duming Zhang ,  Haseeb Kazi ,  Chen Xu ,  Mitchell Brooks ,  Ganesh Upadhyaya

IPC: H01L21/02 ,  H01L21/473 ,  H01L21/033 ,  H01L21/768 ,  H01L21/308 ,  H01L29/78

Abstract: Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

公开(公告)号：US10658174B2

公开(公告)日：2020-05-19

申请号：US15820110

申请日：2017-11-21

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Naveed Ansari ,  Yoshie Kimura ,  Si-Yi Yi Li ,  Kazi Sultana ,  Radhika Mani ,  Duming Zhang ,  Haseeb Kazi ,  Chen Xu ,  Mitchell Brooks ,  Ganesh Upadhyaya

IPC: H01L21/02 ,  H01L21/473 ,  H01L21/033 ,  H01L21/768 ,  H01L21/308 ,  H01L29/78

Abstract: Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

公开(公告)号：US20190157066A1

公开(公告)日：2019-05-23

申请号：US15820110

申请日：2017-11-21

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Naveed Ansari ,  Yoshie Kimura ,  Si-Yi Yi Li ,  Kazi Sultana ,  Radhika Mani ,  Duming Zhang ,  Haseeb Kazi ,  Chen Xu ,  Mitchell Brooks ,  Ganesh Upadhyaya

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/033 ,  H01L21/473

Abstract: Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

公开(公告)号：US20170076957A1

公开(公告)日：2017-03-16

申请号：US14851768

申请日：2015-09-11

Applicant: LAM RESEARCH CORPORATION

Inventor： Jae Ho Lee ,  Changwoo Lee ,  Phil Friddle ,  Stefan Schmitz ,  Naveed Ansari ,  Michael Goss ,  Noel Sun

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/283 ,  H01L21/033 ,  H01L21/02

CPC classification number: H01L21/31144 ,  H01J37/32366 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/0337 ,  H01L21/28132 ,  H01L21/28141 ,  H01L21/283 ,  H01L21/3086 ,  H01L21/31116

Abstract: A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate and etching the mandrel layer to form a plurality of mandrels. The method further includes, without removing the substrate from within the substrate processing chamber and subsequent to etching the mandrel layer, depositing a thin spacer layer such that the thin spacer layer is formed on upper surfaces of the plurality of mandrels, sidewalls of the plurality of mandrels, and portions of the substrate between the sidewalls of the plurality of mandrels, subsequent to depositing the thin spacer layer, etching the thin spacer layer to remove the thin spacer layer from the upper surfaces of the mandrels and the portions of the substrate between the sidewalls of the plurality of mandrels such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains, and, subsequent to etching the thin spacer layer from the upper surfaces of the mandrels and the portions of the substrate between the sidewalls of the plurality of mandrels, etching the plurality of mandrels to remove the plurality of mandrels from the substrate such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains on the substrate.

Abstract translation: 执行侧壁图像转印（SIT）处理的方法包括在衬底处理室内布置衬底，其中衬底包括形成在衬底上的心轴层并蚀刻心轴层以形成多个心轴。 所述方法还包括：在不从所述衬底处理室内移除所述衬底并且在蚀刻所述心轴层之后，沉积薄间隔层，使得所述薄间隔层形成在所述多个心轴的上表面上， 心轴，以及在多个心轴的侧壁之间的衬底的部分，在沉积薄间隔层之后，蚀刻薄间隔层以从芯轴的上表面和衬垫的部分之间移除薄间隔层 多个心轴的侧壁使得只有形成在多个心轴的侧壁上的薄间隔层保留，并且在从所述心轴的上表面和衬底的部分在侧壁之间蚀刻薄间隔层之后， 多个心轴，蚀刻多个心轴以从衬底移除多个心轴使得 只有形成在多个心轴的侧壁上的薄间隔层保留在基底上。