公开(公告)号：US11239420B2

公开(公告)日：2022-02-01

申请号：US16112503

申请日：2018-08-24

Applicant: Lam Research Corporation

Inventor： James Samuel Sims ,  Andrew John McKerrow ,  Meihua Shen ,  Thorsten Lill ,  Shane Tang ,  Kathryn Merced Kelchner ,  John Hoang ,  Alexander Dulkin ,  Danna Qian ,  Vikrant Rai

IPC: H01L21/02 ,  H01L45/00 ,  H01L21/67 ,  H01L43/12 ,  C23C16/34 ,  C23C16/509 ,  C23C16/455

Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

公开(公告)号：US20220115592A1

公开(公告)日：2022-04-14

申请号：US17645178

申请日：2021-12-20

Applicant: Lam Research Corporation

Inventor： James Samuel Sims ,  Andrew John McKerrow ,  Meihua Shen ,  Thorsten Lill ,  Shane Tang ,  Kathryn Merced Kelchner ,  John Hoang ,  Alexander Dulkin ,  Danna Qian ,  Vikrant Rai

IPC: H01L45/00 ,  H01L21/67 ,  H01L21/02 ,  H01L43/12 ,  C23C16/34 ,  C23C16/509 ,  C23C16/455

Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

公开(公告)号：US11832533B2

公开(公告)日：2023-11-28

申请号：US17645178

申请日：2021-12-20

Applicant: Lam Research Corporation

Inventor： James Samuel Sims ,  Andrew John McKerrow ,  Meihua Shen ,  Thorsten Lill ,  Shane Tang ,  Kathryn Merced Kelchner ,  John Hoang ,  Alexander Dulkin ,  Danna Qian ,  Vikrant Rai

IPC: H10N70/00 ,  H01L21/67 ,  H01L21/02 ,  C23C16/34 ,  C23C16/509 ,  C23C16/455 ,  H10N50/01 ,  H10N70/20 ,  H10N50/00

CPC classification number: H10N70/011 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/509 ,  H01L21/022 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/67167 ,  H10N50/00 ,  H10N70/231 ,  H10N70/826 ,  H10N70/882

Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

公开(公告)号：US20200066987A1

公开(公告)日：2020-02-27

申请号：US16112503

申请日：2018-08-24

Applicant: Lam Research Corporation

Inventor： James Samuel Sims ,  Andrew John McKerrow ,  Meihua Shen ,  Thorsten Lill ,  Shane Tang ,  Kathryn Merced Kelchner ,  John Hoang ,  Alexander Dulkin ,  Danna Qian ,  Vikrant Rai

IPC: H01L45/00 ,  H01L21/02 ,  H01L21/67

Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.