公开(公告)号：US11239420B2

公开(公告)日：2022-02-01

申请号：US16112503

申请日：2018-08-24

Applicant: Lam Research Corporation

Inventor： James Samuel Sims ,  Andrew John McKerrow ,  Meihua Shen ,  Thorsten Lill ,  Shane Tang ,  Kathryn Merced Kelchner ,  John Hoang ,  Alexander Dulkin ,  Danna Qian ,  Vikrant Rai

IPC: H01L21/02 ,  H01L45/00 ,  H01L21/67 ,  H01L43/12 ,  C23C16/34 ,  C23C16/509 ,  C23C16/455

Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

公开(公告)号：US10347547B2

公开(公告)日：2019-07-09

申请号：US15232708

申请日：2016-08-09

Applicant: Lam Research Corporation

Inventor： Seshasayee Varadarajan ,  Aaron R. Fellis ,  Andrew John McKerrow ,  James Samuel Sims ,  Ramesh Chandrasekharan ,  Jon Henri

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677

Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).

公开(公告)号：US20220115592A1

公开(公告)日：2022-04-14

申请号：US17645178

申请日：2021-12-20

Applicant: Lam Research Corporation

Inventor： James Samuel Sims ,  Andrew John McKerrow ,  Meihua Shen ,  Thorsten Lill ,  Shane Tang ,  Kathryn Merced Kelchner ,  John Hoang ,  Alexander Dulkin ,  Danna Qian ,  Vikrant Rai

IPC: H01L45/00 ,  H01L21/67 ,  H01L21/02 ,  H01L43/12 ,  C23C16/34 ,  C23C16/509 ,  C23C16/455

Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

公开(公告)号：US20200066607A1

公开(公告)日：2020-02-27

申请号：US16503270

申请日：2019-07-03

Applicant: Lam Research Corporation

Inventor： Seshasayee Varadarajan ,  Aaron R. Fellis ,  Andrew John McKerrow ,  James Samuel Sims ,  Ramesh Chandrasekharan ,  Jon Henri

IPC: H01L21/66 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677 ,  H01L21/02 ,  C23C16/50 ,  C23C16/52

Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).

公开(公告)号：US09865455B1

公开(公告)日：2018-01-09

申请号：US15258789

申请日：2016-09-07

Applicant: Lam Research Corporation

Inventor： James Samuel Sims ,  Kathryn Merced Kelchner

IPC: H01L21/469 ,  H01L21/02 ,  C23C16/34 ,  C23C16/50 ,  C23C16/46 ,  C23C16/455

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  H01L21/0217 ,  H01L21/0228

Abstract: Provided are methods and apparatuses for depositing a nitride film using one or more plasma-enhanced atomic layer deposition cycles and one or more thermal atomic layer deposition cycles in a single reactor. The number of thermal atomic layer deposition cycles can be equal to or greater than the number of plasma-enhanced atomic layer deposition cycles. Incorporation of thermal atomic layer deposition cycles with plasma-enhanced atomic layer deposition cycles can allow for greater fine-tuning of properties of the nitride film. In some implementations, the nitride film is a silicon nitride film. The silicon nitride film can be fine-tuned to allow for a more silicon-rich film with a greater refractive index. In some implementations, the plasma-enhanced atomic layer deposition cycles and the thermal atomic layer deposition cycles can be maintained at the same wafer temperature.

公开(公告)号：US11832533B2

公开(公告)日：2023-11-28

申请号：US17645178

申请日：2021-12-20

Applicant: Lam Research Corporation

Inventor： James Samuel Sims ,  Andrew John McKerrow ,  Meihua Shen ,  Thorsten Lill ,  Shane Tang ,  Kathryn Merced Kelchner ,  John Hoang ,  Alexander Dulkin ,  Danna Qian ,  Vikrant Rai

IPC: H10N70/00 ,  H01L21/67 ,  H01L21/02 ,  C23C16/34 ,  C23C16/509 ,  C23C16/455 ,  H10N50/01 ,  H10N70/20 ,  H10N50/00

CPC classification number: H10N70/011 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/509 ,  H01L21/022 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/67167 ,  H10N50/00 ,  H10N70/231 ,  H10N70/826 ,  H10N70/882

Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

公开(公告)号：US11075127B2

公开(公告)日：2021-07-27

申请号：US16503270

申请日：2019-07-03

Applicant: Lam Research Corporation

Inventor： Seshasayee Varadarajan ,  Aaron R. Fellis ,  Andrew John McKerrow ,  James Samuel Sims ,  Ramesh Chandrasekharan ,  Jon Henri

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/677 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  C23C16/54 ,  C23C16/50 ,  C23C16/52

Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).

公开(公告)号：US20200066987A1

公开(公告)日：2020-02-27

申请号：US16112503

申请日：2018-08-24

Applicant: Lam Research Corporation

Inventor： James Samuel Sims ,  Andrew John McKerrow ,  Meihua Shen ,  Thorsten Lill ,  Shane Tang ,  Kathryn Merced Kelchner ,  John Hoang ,  Alexander Dulkin ,  Danna Qian ,  Vikrant Rai

IPC: H01L45/00 ,  H01L21/02 ,  H01L21/67

Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

公开(公告)号：US20180047645A1

公开(公告)日：2018-02-15

申请号：US15232708

申请日：2016-08-09

Applicant: Lam Research Corporation

Inventor： Seshasayee Varadarajan ,  Aaron R. Fellis ,  Andrew John McKerrow ,  James Samuel Sims ,  Ramesh Chandrasekharan ,  Jon Henri

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/52 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01L22/20 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67745

Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).