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公开(公告)号:US20230092570A1
公开(公告)日:2023-03-23
申请号:US17795509
申请日:2021-02-16
发明人: Lin XU , David Joseph WETZEL , John DAUGHERTY , Hong SHIH , Satish SRINIVASAN , Yuanping SONG , Johnny PHAM , Yiwei SONG , Christopher KIMBALL
摘要: A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.