公开(公告)号：US20180166312A1

公开(公告)日：2018-06-14

申请号：US15894670

申请日：2018-02-12

Applicant: Lam Research Corporation

Inventor： Christopher KIMBALL ,  Keith GAFF ,  Feng WANG

IPC: H01L21/683 ,  H01L21/66 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/00 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32816 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68785 ,  H01L22/26

Abstract: An edge ring for use in a plasma processing chamber with a chuck is provided. An edge ring body has a first surface to be placed over and facing the chuck, wherein the first surface forms a ring around an aperture. A first elastomer ring is integrated to the first surface and extending around the aperture.

公开(公告)号：US20240112893A1

公开(公告)日：2024-04-04

申请号：US18534182

申请日：2023-12-08

Applicant: Lam Research Corporation

Inventor： Feng WANG ,  Keith GAFF ,  Christopher KIMBALL

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01J37/244 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32568 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H01J2237/002 ,  H01J2237/3321 ,  H01L21/68742

Abstract: An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.

公开(公告)号：US20230369026A1

公开(公告)日：2023-11-16

申请号：US18029708

申请日：2021-09-29

Applicant: LAM RESEARCH CORPORATION

Inventor： Christopher KIMBALL ,  Darrell EHRLICH ,  Yuma OHKURA

IPC: H01J37/32 ,  H01L21/687

CPC classification number: H01J37/32642 ,  H01J37/32651 ,  H01L21/68735 ,  H01L21/68742

Abstract: A moveable edge ring system for a substrate processing system includes a top moveable ring including a first annular body arranged around a substrate support. The top moveable ring is exposed to plasma during substrate processing. A moveable support ring is arranged below the top moveable ring and radially outside of a baseplate of the substrate support and includes a second annular body. A shield ring is arranged radially outside of the moveable support ring and includes a third annular body. A cover ring includes a fourth annular body arranged above a radially outer edge of the top moveable ring. An actuator and a lift pin are configured to adjust a position of the top moveable ring and the moveable support ring relative to the shield ring and the cover ring.

公开(公告)号：US20220148903A1

公开(公告)日：2022-05-12

申请号：US17429434

申请日：2020-01-27

Applicant: LAM RESEARCH CORPORATION

Inventor： Feng WANG ,  Keith GAFF ,  Christopher KIMBALL ,  Darrell EHRLICH

IPC: H01L21/683 ,  H01J37/32 ,  C04B37/00 ,  C04B41/00 ,  C04B41/45

Abstract: An electrostatic chuck for a substrate processing system includes a monolithic body made of ceramic. A plurality of first electrodes are arranged in the monolithic body adjacent to a top surface of the monolithic body and that are configured to selectively receive a chucking signal. A gas channel is formed in the monolithic body and is configured to supply back side gas to the top surface. Coolant channels are formed in the monolithic body and are configured to receive fluid to control a temperature of the monolithic body.

公开(公告)号：US20230092570A1

公开(公告)日：2023-03-23

申请号：US17795509

申请日：2021-02-16

Applicant: Lam Research Corporation

Inventor： Lin XU ,  David Joseph WETZEL ,  John DAUGHERTY ,  Hong SHIH ,  Satish SRINIVASAN ,  Yuanping SONG ,  Johnny PHAM ,  Yiwei SONG ,  Christopher KIMBALL

IPC: C25D7/04 ,  H01J37/32 ,  H01L21/683 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08

Abstract: A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.

公开(公告)号：US20210166965A1

公开(公告)日：2021-06-03

申请号：US17175315

申请日：2021-02-12

Applicant: Lam Research Corporation

Inventor： Christopher KIMBALL ,  Keith GAFF ,  Feng WANG

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/687 ,  H01L21/66

Abstract: A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring is provided. A vacuum is provided to the at least one ring backside temperature channel Pressure in the backside temperature channel is measured. An electrostatic ring clamping voltage is provided when the pressure in the backside temperature channel reaches a threshold maximum pressure. The vacuum to the backside temperature channel is discontinued. Pressure in the backside temperature channel is measured. If pressure in the backside temperature channel rises faster than a threshold rate, then sealing failure is indicated. If pressure in the backside temperature channel does not rise faster than the threshold rate, a plasma process is continued, using the backside temperature channel to regulate a temperature of the edge ring.

公开(公告)号：US20240120180A1

公开(公告)日：2024-04-11

申请号：US18546174

申请日：2022-02-25

Applicant: Lam Research Corporation

Inventor： Yuanping SONG ,  Johnny PHAM ,  Yiwei SONG ,  Lin XU ,  Christopher KIMBALL

IPC: H01J37/32 ,  B05D1/02

CPC classification number: H01J37/32477 ,  B05D1/02 ,  H01J37/32715 ,  H01J37/32807 ,  B05D2203/30 ,  B05D2506/10 ,  H01J2237/0213

Abstract: A component in a semiconductor processing chamber is provided. An electrically conductive semiconductor or metal body has a CTE of less than 10.0×10−6/K. An intermediate layer is disposed over at least one surface of the body, the intermediate layer comprising a fluoropolymer. A perfluoroalkoxy alkane (PFA) layer is disposed over the intermediate layer to form the component.

公开(公告)号：US20220285136A1

公开(公告)日：2022-09-08

申请号：US17631984

申请日：2020-07-30

Applicant: LAM RESEARCH CORPORATION

Inventor： Hui Ling HAN ,  Xinwei HUANG ,  Alexander Miller PATERSON ,  Saravanapriyan SRIRAMAN ,  Ann ERICKSON ,  Joanna WU ,  Seetharaman RAMACHANDRAN ,  Christopher KIMBALL ,  Aris PEREZ

IPC: H01J37/32 ,  H01L21/687

Abstract: An edge ring system for a substrate processing system includes a top edge ring including an annular body having an inner diameter and an outer diameter. The outer diameter of the top edge ring is smaller than a horizontal opening of a substrate port of the substrate processing system. A first edge ring is arranged below the top edge ring including an annular body having an inner diameter and an outer diameter. The outer diameter of the first edge ring is larger than the substrate port of the substrate processing system. The inner diameter of the first edge ring is smaller than the inner diameter of the top edge ring.

公开(公告)号：US20220254612A1

公开(公告)日：2022-08-11

申请号：US17632066

申请日：2020-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Christopher KIMBALL ,  Hema Swaroop MOPIDEVI ,  Saravanapriyan SRIRAMAN ,  Tom A. KAMP ,  Darrell EHRLICH ,  Anthony CONTRERAS ,  Chiara Helena Catherina MACPHERSON

IPC: H01J37/32 ,  H01L21/687

Abstract: A moveable edge ring system for a plasma processing system includes a top edge ring and a first edge ring arranged below the top edge ring. A second edge ring is made of conductive material and includes an upper portion, a middle portion and a lower portion. The top edge ring and the second edge ring are configured to move in a vertical direction relative to a substrate support and the first edge ring when biased upwardly by a lift pin. The second edge ring is arranged below the top edge ring and radially outside of the first edge ring.

公开(公告)号：US20180277412A1

公开(公告)日：2018-09-27

申请号：US15988581

申请日：2018-05-24

Applicant: Lam Research Corporation

Inventor： Christopher KIMBALL ,  Keith GAFF ,  Alexander MATYUSHKIN ,  Zhigang CHEN ,  Keith COMENDANT

IPC: H01L21/683 ,  H01J37/32

Abstract: An electrostatic chuck assembly for processing a semiconductor substrate is provided. The electrostatic chuck assembly includes a first layer, a baseplate, a second layer, and at least one annular gasket. The first layer includes ceramic material and a first radio frequency (RF) electrode. The first RF electrode is embedded in the ceramic material. The second layer is disposed between the first layer and the baseplate. The at least one annular gasket extends along an upper surface of the baseplate and through the second layer. The at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode. RF power passes from the baseplate to the first RF electrode through the at least one annular gasket.