公开(公告)号：US20240308926A1

公开(公告)日：2024-09-19

申请号：US18577889

申请日：2022-08-04

Applicant: Lam Research Corporation

Inventor： Amir A. YASSERI ,  Hong SHIH ,  Satish SRINIVASAN ,  Jeremiah Michael DEDERICK ,  Pankaj HAZARIKA ,  Lin XU ,  Douglas DETERT

IPC: C04B41/00 ,  B24C1/00 ,  H01J37/32

CPC classification number: C04B41/0072 ,  B24C1/003 ,  H01J37/32495

Abstract: A method for treating a ceramic component for use in a semiconductor processing chamber, wherein the ceramic component comprises a ceramic laminate comprising a base zone comprising a first dielectric ceramic material, a protective, wherein the protective zone comprises a second dielectric ceramic material, and a transition zone between the protective zone and base zone, wherein the transition zone comprises the first dielectric ceramic material and the second dielectric ceramic material, wherein exposure of the ceramic component to UV light changes an optical property of at least a first part of the ceramic component is provided. A heat treatment of the ceramic component is provided by heating the ceramic component in a furnace to a temperature of between 400° C. to 1000° C. for a period between 2 hours to 20 hours, wherein the heat treatment changes the optical property of the first part of the ceramic component.

公开(公告)号：US20220392753A1

公开(公告)日：2022-12-08

申请号：US17770147

申请日：2020-10-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Lin XU ,  Douglas DETERT ,  John DAUGHERTY ,  Pankaj HAZARIKA ,  Satish SRINIVASAN ,  Nash W. ANDERSON ,  John Michael KERNS ,  Robin KOSHY ,  David Joseph WETZEL ,  Lei LIU ,  Eric A. PAPE

IPC: H01J37/32

Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.

公开(公告)号：US20220093370A1

公开(公告)日：2022-03-24

申请号：US17426965

申请日：2020-02-05

Applicant: Lam Research Corporation ,  Silfex, Inc.

Inventor： Lin XU ,  Satish SRINIVASAN ,  Robin KOSHY ,  Amir A. YASSERI ,  Justin TANG ,  Jie ZHANG ,  David Joseph WETZEL

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/683

Abstract: Textured silicon components of a semiconductor processing chamber having hillock-shaped or pyramid-shaped structures on its surface, and a method of texturing such silicon components. The silicon component can be selectively textured using chemical means to form the hillock-shaped structures to increase the surface area of the silicon component to improve polymer adhesion.

公开(公告)号：US20180047594A1

公开(公告)日：2018-02-15

申请号：US15235660

申请日：2016-08-12

Applicant: Lam Research Corporation

Inventor： Lin XU ,  Hong SHIH ,  Robin KOSHY ,  John DAUGHERTY ,  Satish SRINIVASAN

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/67069 ,  H01L21/02123 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67086 ,  H01L21/6831

Abstract: A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300° C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide. The silicon part is placed in a wet bath wherein the bath is a solution that selectively etches silicon oxide with respect to silicon.

公开(公告)号：US20170018408A1

公开(公告)日：2017-01-19

申请号：US14800583

申请日：2015-07-15

Applicant: Lam Research Corporation

Inventor： Lin XU ,  Hong SHIH ,  John DAUGHERTY ,  Satish SRINIVASAN ,  Siwen LI

IPC: H01J37/32 ,  B32B38/00 ,  B32B18/00 ,  B32B37/24 ,  C01F17/00 ,  C04B35/64

CPC classification number: H01J37/32495 ,  B32B18/00 ,  B32B37/24 ,  B32B38/0008 ,  B32B2250/02 ,  B32B2307/412 ,  B32B2310/14 ,  B32B2315/02 ,  C01F17/0012 ,  C01F17/0043 ,  C01F17/0062 ,  C04B35/505 ,  C04B35/64 ,  C04B37/005 ,  C04B37/008 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/616 ,  C04B2235/785 ,  C04B2235/963 ,  C04B2235/9653 ,  C04B2237/10 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/348 ,  C04B2237/36 ,  C04B2237/366 ,  C04B2237/62 ,  H01J37/32009 ,  H01J37/32715

Abstract: In accordance with this disclosure, there are provided several inventions, including an apparatus and method for creating a plasma resistant part, which may be formed of a sintered nanocrystalline ceramic material comprising yttrium, oxide, and fluoride. Example parts thus made may include windows, edge rings, or injectors. In one configuration, the parts may be yttria co-sintered with alumina, which may be transparent.

Abstract translation: 根据本公开，提供了几个发明，包括用于产生等离子体抗蚀部分的装置和方法，其可以由包含钇，氧化物和氟化物的烧结纳米晶体陶瓷材料形成。 由此制成的示例部件可以包括窗口，边缘环或喷射器。 在一种构造中，这些部件可以是与氧化铝共烧结的氧化钇，氧化铝可以是透明的。

公开(公告)号：US20220115214A1

公开(公告)日：2022-04-14

申请号：US17432003

申请日：2020-03-03

Applicant: Lam Research Corporation

Inventor： Lin XU ,  John DAUGHERTY ,  Satish SRINIVASAN ,  David Joseph WETZEL

IPC: H01J37/32 ,  C23C28/04

Abstract: An apparatus adapted for use in a plasma processing chamber is provided. An aluminum body with at least one surface is provided. An aluminum oxide containing aerosol deposition coating is disposed over the at least one surface of the aluminum body. An yttrium containing aerosol deposition coating is disposed over the aluminum oxide containing aerosol deposition coating.

公开(公告)号：US20160375515A1

公开(公告)日：2016-12-29

申请号：US14754441

申请日：2015-06-29

Applicant: Lam Research Corporation

Inventor： Lin XU ,  John DAUGHERTY ,  Hong SHIH ,  Yiwei SONG ,  Satish SRINIVASAN

IPC: B23K1/00 ,  B32B15/01 ,  C23C16/455 ,  H01J37/32 ,  B23K31/02 ,  C25D11/04

CPC classification number: B23K1/0008 ,  B23K1/19 ,  B23K2103/10 ,  B32B15/016 ,  C25D11/04 ,  C25D11/08 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32807

Abstract: In accordance with this disclosure, there are provided several inventions, including an apparatus and method for brazing at least two aluminum or aluminum alloy components and providing an anodized coating, and an atomic layer deposition coating for adding plasma corrosion resistance.

Abstract translation: 根据本公开，提供了几个发明，包括用于钎焊至少两个铝或铝合金部件并提供阳极氧化涂层的装置和方法，以及用于添加等离子体耐腐蚀性的原子层沉积涂层。

公开(公告)号：US20240212991A1

公开(公告)日：2024-06-27

申请号：US18577115

申请日：2022-08-02

Applicant: Lam Research Corporation

Inventor： Eric A. PAPE ,  David Joseph WETZEL ,  Lin XU ,  Satish SRINIVASAN ,  Robin KOSHY ,  Douglas DETERT ,  Jeremiah Michael DEDERICK

IPC: H01J37/32 ,  B05D1/02 ,  H01L21/683

CPC classification number: H01J37/32495 ,  B05D1/02 ,  H01J37/32119 ,  H01J37/32467 ,  H01J37/32715 ,  B05D2202/25 ,  B05D2203/30 ,  H01J2237/3341 ,  H01L21/6833

Abstract: A component for use in a semiconductor processing chamber is provided. A component body comprises a metallic material or ceramic material. A coating is disposed on a surface of the component body where the coating comprises a layer of yttrium aluminum oxide, the yttrium aluminum oxide layer being formed of a composition having a molar ratio of 1.0-0.9 yttrium to 1.0-1.1 aluminum over at least 90% of the yttrium aluminum oxide layer.

公开(公告)号：US20230331633A1

公开(公告)日：2023-10-19

申请号：US18247724

申请日：2021-11-03

Applicant: Lam Research Corporation

Inventor： Lin XU ,  Harmeet SINGH ,  Pankaj HAZARIKA ,  Satish SRINIVASAN ,  Robin KOSHY

IPC: C04B35/565 ,  H01J37/32 ,  C04B35/64

CPC classification number: C04B35/565 ,  H01J37/32642 ,  H01J37/3244 ,  C04B35/64 ,  H01J2237/334 ,  C04B2235/3826 ,  C04B2235/3821 ,  C04B2235/612 ,  C04B2235/666 ,  C04B2235/9669

Abstract: A method for making a component for use in a plasma processing chamber is provided. A non-oxide silicon containing powder composition is placed in a mold, wherein the non-oxide silicon containing powder composition consists essentially of a non-oxide silicon containing powder and at least one of a B or B4C dopant. The non-oxide silicon containing powder composition is subjected to spark plasma sintering (SPS) to form a spark plasma sintered component. The spark plasma sintered component is machined into a plasma processing chamber component.

公开(公告)号：US20230092570A1

公开(公告)日：2023-03-23

申请号：US17795509

申请日：2021-02-16

Applicant: Lam Research Corporation

Inventor： Lin XU ,  David Joseph WETZEL ,  John DAUGHERTY ,  Hong SHIH ,  Satish SRINIVASAN ,  Yuanping SONG ,  Johnny PHAM ,  Yiwei SONG ,  Christopher KIMBALL

IPC: C25D7/04 ,  H01J37/32 ,  H01L21/683 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08

Abstract: A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.