公开(公告)号：US20240383017A1

公开(公告)日：2024-11-21

申请号：US18787708

申请日：2024-07-29

Applicant: Lam Research Corporation

Inventor： Amir A. YASSERI ,  Hong SHIH ,  John DAUGHERTY ,  Duane OUTKA ,  Lin XU ,  Armen AVOYAN ,  Cliff LA CROIX ,  Girish M HUNDI

IPC: B08B7/04 ,  B08B3/04 ,  B08B3/12 ,  B08B3/14 ,  B08B5/02 ,  H01J37/32

Abstract: A method for conditioning a component of a wafer processing chamber is provided. The component is placed in an ultrasonic conditioning solution in an ultrasonic solution tank. Ultrasonic energy is applied through the ultrasonic conditioning solution to the component to clean the component. The component is submerged in a megasonic conditioning solution in a tank. Megasonic energy is applied through the megasonic conditioning solution to the component to clean the component.

公开(公告)号：US20240308926A1

公开(公告)日：2024-09-19

申请号：US18577889

申请日：2022-08-04

Applicant: Lam Research Corporation

Inventor： Amir A. YASSERI ,  Hong SHIH ,  Satish SRINIVASAN ,  Jeremiah Michael DEDERICK ,  Pankaj HAZARIKA ,  Lin XU ,  Douglas DETERT

IPC: C04B41/00 ,  B24C1/00 ,  H01J37/32

CPC classification number: C04B41/0072 ,  B24C1/003 ,  H01J37/32495

Abstract: A method for treating a ceramic component for use in a semiconductor processing chamber, wherein the ceramic component comprises a ceramic laminate comprising a base zone comprising a first dielectric ceramic material, a protective, wherein the protective zone comprises a second dielectric ceramic material, and a transition zone between the protective zone and base zone, wherein the transition zone comprises the first dielectric ceramic material and the second dielectric ceramic material, wherein exposure of the ceramic component to UV light changes an optical property of at least a first part of the ceramic component is provided. A heat treatment of the ceramic component is provided by heating the ceramic component in a furnace to a temperature of between 400° C. to 1000° C. for a period between 2 hours to 20 hours, wherein the heat treatment changes the optical property of the first part of the ceramic component.

公开(公告)号：US20230411124A1

公开(公告)日：2023-12-21

申请号：US18034635

申请日：2021-11-01

Applicant: Lam Research Corporation

Inventor： John Michael KERNS ,  David Joseph WETZEL ,  Lin XU ,  Pankaj HAZARIKA ,  Douglas DETERT ,  Lei LIU ,  Eric A. PAPE

IPC: H01J37/32 ,  C04B41/00 ,  C04B35/01

CPC classification number: H01J37/32477 ,  C04B41/0054 ,  H01J37/32467 ,  C04B2235/94 ,  C04B2235/666 ,  C04B2235/6028 ,  C04B35/01

Abstract: A method for forming a component for a plasma processing chamber is provided. An internal mold is provided. An external mold is provided around the internal mold. The external mold is filled with a ceramic powder, wherein the ceramic powder surrounds the internal mold. The ceramic powder is sintered to form a solid part. The solid part is removed from the external mold.

公开(公告)号：US20240120180A1

公开(公告)日：2024-04-11

申请号：US18546174

申请日：2022-02-25

Applicant: Lam Research Corporation

Inventor： Yuanping SONG ,  Johnny PHAM ,  Yiwei SONG ,  Lin XU ,  Christopher KIMBALL

IPC: H01J37/32 ,  B05D1/02

CPC classification number: H01J37/32477 ,  B05D1/02 ,  H01J37/32715 ,  H01J37/32807 ,  B05D2203/30 ,  B05D2506/10 ,  H01J2237/0213

Abstract: A component in a semiconductor processing chamber is provided. An electrically conductive semiconductor or metal body has a CTE of less than 10.0×10−6/K. An intermediate layer is disposed over at least one surface of the body, the intermediate layer comprising a fluoropolymer. A perfluoroalkoxy alkane (PFA) layer is disposed over the intermediate layer to form the component.

公开(公告)号：US20220115214A1

公开(公告)日：2022-04-14

申请号：US17432003

申请日：2020-03-03

Applicant: Lam Research Corporation

Inventor： Lin XU ,  John DAUGHERTY ,  Satish SRINIVASAN ,  David Joseph WETZEL

IPC: H01J37/32 ,  C23C28/04

Abstract: An apparatus adapted for use in a plasma processing chamber is provided. An aluminum body with at least one surface is provided. An aluminum oxide containing aerosol deposition coating is disposed over the at least one surface of the aluminum body. An yttrium containing aerosol deposition coating is disposed over the aluminum oxide containing aerosol deposition coating.

公开(公告)号：US20210205858A1

公开(公告)日：2021-07-08

申请号：US17211518

申请日：2021-03-24

Applicant: Lam Research Corporation

Inventor： Amir A. YASSERI ,  Hong SHIH ,  John DAUGHERTY ,  Duane OUTKA ,  Lin XU ,  Armen AVOYAN ,  Cliff LA CROIX ,  Girish HUNDI

IPC: B08B7/04 ,  B08B5/02 ,  B08B3/04 ,  B08B3/14 ,  B08B3/12

Abstract: A method for conditioning a component of a wafer processing chamber is provided. The component is placed in an ultrasonic conditioning solution in an ultrasonic solution tank. Ultrasonic energy is applied through the ultrasonic conditioning solution to the component to clean the component. The component is submerged in a megasonic conditioning solution in a tank. Megasonic energy is applied through the megasonic conditioning solution to the component to clean the component.

公开(公告)号：US20180127868A1

公开(公告)日：2018-05-10

申请号：US15843683

申请日：2017-12-15

Applicant: Lam Research Corporation

Inventor： Lin XU ,  Hong SHIH ,  Nash ANDERSON ,  Tom STEVENSON ,  John DAUGHERTY ,  John Michael KERNS ,  Robert Griffith O'NEILL

IPC: C23C14/56 ,  C23C16/455 ,  C23C16/44 ,  C23C16/04

CPC classification number: C23C14/564 ,  C23C16/045 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45525 ,  Y10T428/263 ,  Y10T428/31504 ,  Y10T428/31551 ,  Y10T428/31678 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31786

Abstract: A fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus is provided. The fluid handling component comprises interior fluid wetted surfaces and an atomic layer deposition (ALD) or molecular layer deposition (MLD) barrier coating on the interior fluid wetted surfaces wherein the fluid wetted surfaces which include the ALD or MLD barrier coating are configured to be contacted by a process gas and/or fluid during a semiconductor substrate processing process wherein the ALD or MLD barrier coating protects the underlying fluid wetted surfaces from erosion and/or corrosion.

公开(公告)号：US20160375515A1

公开(公告)日：2016-12-29

申请号：US14754441

申请日：2015-06-29

Applicant: Lam Research Corporation

Inventor： Lin XU ,  John DAUGHERTY ,  Hong SHIH ,  Yiwei SONG ,  Satish SRINIVASAN

IPC: B23K1/00 ,  B32B15/01 ,  C23C16/455 ,  H01J37/32 ,  B23K31/02 ,  C25D11/04

CPC classification number: B23K1/0008 ,  B23K1/19 ,  B23K2103/10 ,  B32B15/016 ,  C25D11/04 ,  C25D11/08 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32807

Abstract: In accordance with this disclosure, there are provided several inventions, including an apparatus and method for brazing at least two aluminum or aluminum alloy components and providing an anodized coating, and an atomic layer deposition coating for adding plasma corrosion resistance.

Abstract translation: 根据本公开，提供了几个发明，包括用于钎焊至少两个铝或铝合金部件并提供阳极氧化涂层的装置和方法，以及用于添加等离子体耐腐蚀性的原子层沉积涂层。

公开(公告)号：US20180318890A1

公开(公告)日：2018-11-08

申请号：US15969626

申请日：2018-05-02

Applicant: Lam Research Corporation

Inventor： Amir A. YASSERI ,  Hong SHIH ,  John DAUGHERTY ,  Duane OUTKA ,  Lin XU ,  Armen AVOYAN ,  Cliff LA CROIX ,  Girish HUNDI

IPC: B08B7/04 ,  H01J37/32 ,  B08B3/12 ,  B08B3/04 ,  B08B3/14 ,  B08B5/02

CPC classification number: B08B7/04 ,  B08B3/048 ,  B08B3/12 ,  B08B3/14 ,  B08B5/02 ,  H01J37/32853

Abstract: An apparatus for conditioning a component of a processing chamber is provided. A tank for holding a megasonic conditioning solution is provided. A mount holds the component immersed in a megasonic conditioning solution, when the tank is filled with the megasonic conditioning solution. A megasonic conditioning solution inlet system delivers the megasonic conditioning solution to the tank. A megasonic transducer head comprises at least one megasonic transducer to provide megasonic energy to the megasonic conditioning solution, wherein the megasonic energy is delivered to the component via the megasonic conditioning solution. A megasonic conditioning solution drain system drains the megasonic conditioning solution from the tank at a location above where the component is held in the megasonic conditioning solution. An actuator moves the megasonic transducer head across the tank.

公开(公告)号：US20180047594A1

公开(公告)日：2018-02-15

申请号：US15235660

申请日：2016-08-12

Applicant: Lam Research Corporation

Inventor： Lin XU ,  Hong SHIH ,  Robin KOSHY ,  John DAUGHERTY ,  Satish SRINIVASAN

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/67069 ,  H01L21/02123 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67086 ,  H01L21/6831

Abstract: A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300° C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide. The silicon part is placed in a wet bath wherein the bath is a solution that selectively etches silicon oxide with respect to silicon.