Apparatus for Dielectric Deposition Process
    2.
    发明申请
    Apparatus for Dielectric Deposition Process 有权
    电介质沉积工艺设备

    公开(公告)号:US20140026813A1

    公开(公告)日:2014-01-30

    申请号:US13557904

    申请日:2012-07-25

    IPC分类号: C23C16/455 C23C16/50

    摘要: An apparatus comprises a first gas inlet coupled between a first pipe and a reaction chamber, wherein the first pipe configured to carry process gases, a second gas inlet coupled between a second pipe and the reaction chamber, wherein the second pipe configured to carry a precursor material in a gaseous state and a heating device coupled to the second pipe and the second gas inlet, wherein the heating device keeps an ambient temperature of the second pipe and the second gas inlet above a boiling point of the precursor material.

    摘要翻译: 一种装置包括耦合在第一管和反应室之间的第一气体入口,其中第一管被构造成承载处理气体,第二气体入口连接在第二管和反应室之间,其中第二管配置成承载前体 处于气态的材料和耦合到第二管和第二气体入口的加热装置,其中加热装置将第二管和第二气体入口的环境温度保持在前体材料的沸点之上。