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1.发明申请Slow wave structures for microwave amplifiers and oscillators and methods of micro-fabrication 有权用于微波放大器和振荡器的慢波结构和微加工方法公开(公告)号：US20060057504A1
公开(公告)日：2006-03-16
申请号：US10941237
申请日：2004-09-15
申请人： Laurence Sadwick , Jehn-Huar Chern , Ruey-Jen Hwu , Jishi Ren , Ding Wu , Ching-Hsi Lin
发明人： Laurence Sadwick , Jehn-Huar Chern , Ruey-Jen Hwu , Jishi Ren , Ding Wu , Ching-Hsi Lin
CPC分类号： H01J25/42 , G03F7/2022 , G03F7/24 , H01J23/165 , Y10T29/53439
摘要： Embodiments of the present invention include helical, ring bar and tunnel ladder slow wave structures (SWSs). Embodiments of methods of micro-fabricating such SWSs are also disclosed. Embodiments of high frequency electromagnetic devices including such SWSs are also disclosed. Exemplary high frequency electromagnetic devices may include a traveling wave tube, a traveling wave tube amplifier, a back wave oscillator, as part of a linear accelerator, a microwave power module, a klystron or a millimeter-wave power module.
摘要翻译： 本发明的实施例包括螺旋形，环形条和隧道梯形慢波结构（SWS）。 还公开了微型制造这种SWS的方法的实施例。 还公开了包括这种SWS的高频电磁装置的实施例。 示例性的高频电磁装置可以包括行波管，行波管放大器，背波振荡器，作为线性加速器的一部分，微波功率模块，速调管或毫米波功率模块。
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公开(公告)号：US20060057505A1
公开(公告)日：2006-03-16
申请号：US10941689
申请日：2004-09-15
申请人： Laurence Sadwick , Jehn-Huar Chern , Ruey-Jen Hwu
发明人： Laurence Sadwick , Jehn-Huar Chern , Ruey-Jen Hwu
IPC分类号： H01P11/00
CPC分类号： H01J23/165 , H01J25/42
摘要： Vacuum compatible high frequency electromagnetic and millimeter wave source components, devices and methods of micro-fabricating such components and devices are disclosed. Embodiments of the methods may include using a UV-curable photoresist, such as SU-8 to form structures having height up to and exceeding 1 mm. High frequency electromagnetic wave sources including the inventive high frequency electromagnetic wave source components are also disclosed.
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公开(公告)号：US6140139A
公开(公告)日：2000-10-31
申请号：US218344
申请日：1998-12-22
申请人： Richard Lienau , Laurence Sadwick
发明人： Richard Lienau , Laurence Sadwick
摘要： A Hall effect ferromagnetic non-volatile random access memory cell comprising a Hall effect sensor adjacent to a ferromagnetic bit which is surrounded by a drive coil. The coil is electrically connected to a drive circuit, and when provided with an appropriate current creates a residual magnetic field in the ferromagnetic bit, the polarity of which determines the memory status of the cell. The Hall effect sensor is electrically connected via four conductors to a voltage source, ground, and two read sense comparator lines for comparing the voltage output to determine the memory status of the cell. The read and write circuits are arranged in a matrix of bit columns and byte rows. A method for manufacturing said Hall effect ferromagnetic non-volatile random access memory cell.
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公开(公告)号：US20060063025A1
公开(公告)日：2006-03-23
申请号：US11101877
申请日：2005-04-07
申请人： Jing-Yi Huang , Laurence Sadwick
发明人： Jing-Yi Huang , Laurence Sadwick
CPC分类号： C03C17/40 , C03C17/36 , C03C17/3605 , C03C17/3615 , C23C14/025 , C23C14/165 , C23C14/185 , H01L21/2855 , H01L21/76838 , H01L21/76864 , H01L21/76876 , H01L2221/1078 , Y10T428/12576 , Y10T428/12611 , Y10T428/12743 , Y10T428/12875 , Y10T428/12889 , Y10T428/12903 , Y10T428/12944
摘要： A method of forming a structure useful in all forms of deposited metals, elemental metals, metal alloys, metal compounds, metal systems, including refractory metals such as Tungsten and Tantalum is provided. The structure generally comprises a substrate, a first layer formed atop the substrate, and a second layer formed atop the first layer. The first layer comprises a metal, which can be chromium, gold, platinum, aluminum, nickel, or copper. The second layer comprises a metal, elemental metal, metal alloy, metal compound, or metal system comprising a refractory metal such as tungsten or tantalum. The substrate can be a silicon, quartz or glass, metal, metal oxide or nitride.
摘要翻译： 提供了形成可用于所有形式的沉积金属，元素金属，金属合金，金属化合物，金属体系，包括难熔金属如钨和钽的结构的方法。 该结构通常包括衬底，形成在衬底顶部的第一层和形成在第一层顶上的第二层。 第一层包括可以是铬，金，铂，铝，镍或铜的金属。 第二层包括金属，元素金属，金属合金，金属化合物或包含难熔金属如钨或钽的金属体系。 衬底可以是硅，石英或玻璃，金属，金属氧化物或氮化物。
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5.发明授权Hall effect ferromagnetic random access memory device and its method of manufacture 有权霍尔效应铁磁随机存取存储器及其制造方法公开(公告)号：US06341080B1
公开(公告)日：2002-01-22
申请号：US09594470
申请日：2000-06-15
申请人： Richard Lienau , Laurence Sadwick
发明人： Richard Lienau , Laurence Sadwick
IPC分类号： G11C1300
摘要： A Hall effect ferromagnetic non-volatile random access memory cell comprising a Hall effect sensor adjacent to a ferromagnetic bit which is surrounded by a drive coil. The coil is electrically connected to a drive circuit, and when provided with an appropriate current creates a residual magnetic field in the ferromagnetic bit, the polarity of which determines the memory status of the cell. The Hall effect sensor is electrically connected via four conductors to a voltage source, ground, and two read sense comparator lines for comparing the voltage output to determine the memory status of the cell. The read and write circuits are arranged in a matrix of bit columns and byte rows. A method for manufacturing said Hall effect ferromagnetic non-volatile random access memory cell.
摘要翻译： 霍尔效应铁磁非易失性随机存取存储单元包括霍尔效应传感器，该霍尔效应传感器与由驱动线圈包围的铁磁位相邻。 线圈电连接到驱动电路，并且当提供适当的电流时，在铁磁位中产生残余磁场，其极性决定了电池的存储状态。 霍尔效应传感器通过四个导体电连接到电压源，地和两个读感测比较器线，用于比较电压输出以确定电池的存储状态。 读取和写入电路以位列和字节行的矩阵排列。 一种用于制造所述霍尔效应铁磁非易失性随机存取存储单元的方法。
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