公开(公告)号：US20080142991A1

公开(公告)日：2008-06-19

申请号：US12070743

申请日：2008-02-20

申请人： Lawrence Wong ,  Grant Kloster ,  Lawrence Foley

发明人： Lawrence Wong ,  Grant Kloster ,  Lawrence Foley

IPC分类号： H01L23/52

CPC分类号： H01L24/16 ,  H01L23/3157 ,  H01L23/544 ,  H01L24/12 ,  H01L24/81 ,  H01L25/0657 ,  H01L2223/54426 ,  H01L2224/13099 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/8183 ,  H01L2224/81894 ,  H01L2224/83894 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2224/29099 ,  H01L2224/0401

摘要： Embodiments of the invention include a device with stacked substrates. Conducting interconnecting structures of one substrate are bonded to conducting interconnecting structures of another substrate. A passivating layer may be on the conducting interconnecting structures between the substrates and may be formed by an atomic layer deposition process or a with a Langmuir-Blodgett technique.

公开(公告)号：US07354862B2

公开(公告)日：2008-04-08

申请号：US11109241

申请日：2005-04-18

申请人： Lawrence Wong ,  Grant Kloster ,  Lawrence Foley

发明人： Lawrence Wong ,  Grant Kloster ,  Lawrence Foley

IPC分类号： H01L21/302

CPC分类号： H01L24/16 ,  H01L23/3157 ,  H01L23/544 ,  H01L24/12 ,  H01L24/81 ,  H01L25/0657 ,  H01L2223/54426 ,  H01L2224/13099 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/8183 ,  H01L2224/81894 ,  H01L2224/83894 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2224/29099 ,  H01L2224/0401

摘要： Embodiments of the invention include a device with stacked substrates. Conducting interconnecting structures of one substrate are bonded to conducting interconnecting structures of another substrate. A passivating layer may be on the conducting interconnecting structures between the substrates and may be formed by an atomic layer deposition process or a with a Langmuir-Blodgett technique.

摘要翻译： 本发明的实施例包括具有堆叠衬底的装置。 将一个衬底的导电互连结构结合到另一衬底的导电互连结构。 钝化层可以在衬底之间的导电互连结构上，并且可以通过原子层沉积工艺或用Langmuir-Blodgett技术形成。

公开(公告)号：US20060234473A1

公开(公告)日：2006-10-19

申请号：US11109241

申请日：2005-04-18

申请人： Lawrence Wong ,  Grant Kloster ,  Lawrence Foley

发明人： Lawrence Wong ,  Grant Kloster ,  Lawrence Foley

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L24/16 ,  H01L23/3157 ,  H01L23/544 ,  H01L24/12 ,  H01L24/81 ,  H01L25/0657 ,  H01L2223/54426 ,  H01L2224/13099 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/8183 ,  H01L2224/81894 ,  H01L2224/83894 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2224/29099 ,  H01L2224/0401

摘要： Embodiments of the invention include a device with stacked substrates. Conducting interconnecting structures of one substrate are bonded to conducting interconnecting structures of another substrate. A passivating layer may be on the conducting interconnecting structures between the substrates and may be formed by an atomic layer deposition process or a with a Langmuir-Blodgett technique.

摘要翻译： 本发明的实施例包括具有堆叠衬底的装置。 将一个衬底的导电互连结构结合到另一衬底的导电互连结构。 钝化层可以在衬底之间的导电互连结构上，并且可以通过原子层沉积工艺或用Langmuir-Blodgett技术形成。

公开(公告)号：US07164206B2

公开(公告)日：2007-01-16

申请号：US09820079

申请日：2001-03-28

申请人： Grant Kloster ,  Jihperng Leu ,  Lawrence Wong ,  Andrew Ott ,  Patrick Marrow

发明人： Grant Kloster ,  Jihperng Leu ,  Lawrence Wong ,  Andrew Ott ,  Patrick Marrow

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76835 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5226 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a microelectronic device and a structure therein that includes a diffusion barrier layer having a first thickness and a first dielectric constant. An etch stop layer is disposed above and on the diffusion barrier layer. The etch stop layer has a second thickness and a second dielectric constant.

摘要翻译： 本发明涉及微电子器件及其中的结构，其包括具有第一厚度和第一介电常数的扩散阻挡层。 蚀刻停止层设置在扩散阻挡层的上方和上方。 蚀刻停止层具有第二厚度和第二介电常数。

公开(公告)号：US20050208753A1

公开(公告)日：2005-09-22

申请号：US11131740

申请日：2005-05-17

申请人： Andrew Ott ,  Lawrence Wong ,  Patrick Morrow ,  Jihperng Leu ,  Grant Kloster

发明人： Andrew Ott ,  Lawrence Wong ,  Patrick Morrow ,  Jihperng Leu ,  Grant Kloster

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/76807 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dual-damascene process where first alternate ILDs are made of a first material and second alternate ILDs are made of a second material. Each material is etchable at a faster rate than the other in the presence of different etchant such as for an organic polymer and an inorganic low k material. This allows the ILDs to be deposited alternately on one another without an etchant stop layer thereby reducing capacitance.

摘要翻译： 双镶嵌工艺，其中第一替代ILD由第一材料制成，第二替代ILD由第二材料制成。 在存在不同的蚀刻剂（例如有机聚合物和无机低k材料）的情况下，每种材料可以以比另一种更快的速度进行刻蚀。 这允许ILD彼此交替沉积而没有蚀刻剂停止层，从而降低电容。

公开(公告)号：US20150193866A1

公开(公告)日：2015-07-09

申请号：US14585069

申请日：2014-12-29

申请人： Lauren Van Heerden ,  Lawrence Wong ,  Tim Thompson ,  Mike Stephenson ,  Nigel Lall ,  Orin Del Vecchio ,  Gunalan Nadarajah

发明人： Lauren Van Heerden ,  Lawrence Wong ,  Tim Thompson ,  Mike Stephenson ,  Nigel Lall ,  Orin Del Vecchio ,  Gunalan Nadarajah

IPC分类号： G06Q40/02 ,  H04L29/08

CPC分类号： G06Q40/02 ,  H04L67/18 ,  H04L67/306

摘要： The disclosed embodiments include methods and systems for providing account status notifications. The disclosed embodiments include, for example, a device for providing account status notifications including a memory storing software instructions and one or more processors configured to execute the software instructions to perform operations. In one aspect, the operations may include receiving account status notification information for a first account associated with a user. The account status notification information may be generated based on one or more notification rules and account information associated with the first account. The operations may also include generating, based on the received account status notification information, a first account status indicator that provides a status of a first account parameter associated with the first account that is presented via a device component without a user request to receive the status of the first account parameter.

摘要翻译： 所公开的实施例包括用于提供帐户状态通知的方法和系统。 所公开的实施例包括例如用于提供帐户状态通知的设备，包括存储软件指令的存储器和被配置为执行软件指令以执行操作的一个或多个处理器。 在一个方面，操作可以包括接收与用户相关联的第一帐户的帐户状态通知信息。 可以基于与第一帐户相关联的一个或多个通知规则和帐户信息来生成帐户状态通知信息。 所述操作还可以包括基于所接收的帐户状态通知信息生成第一帐户状态指示符，其提供与经由设备组件呈现的第一帐户相关联的第一帐户参数的状态，而没有用户请求以接收状态 的第一个帐户参数。

公开(公告)号：US08080479B2

公开(公告)日：2011-12-20

申请号：US11733858

申请日：2007-04-11

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC分类号： H01L21/302

CPC分类号： C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

摘要： A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.

摘要翻译： 在等离子体反应器室中处理工件的方法包括经由电极将RF功率耦合到腔室中的等离子体，RF功率在包括基频f的频率范围内是可变频率的。 该方法还包括将电极耦合到具有作为基频f的谐波的谐振VHF频率F的谐振器，以便在谐波处产生VHF功率。 该方法通过控制从f向F转换为F的发电机的功率比例来控制基波f附近的功率与谐波F功率的比值，以便控制等离子体离子密度分布。

公开(公告)号：US20080182418A1

公开(公告)日：2008-07-31

申请号：US11733858

申请日：2007-04-11

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

摘要： A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.

摘要翻译： 在等离子体反应器室中处理工件的方法包括经由电极将RF功率耦合到腔室中的等离子体，RF功率在包括基频f的频率范围内是可变频率的。 该方法还包括将电极耦合到具有作为基频f的谐波的谐振VHF频率F的谐振器，以便在谐波处产生VHF功率。 该方法通过控制从f向F转换为F的发电机的功率比例来控制基波f附近的功率与谐波F功率的比值，以便控制等离子体离子密度分布。

公开(公告)号：US20080182417A1

公开(公告)日：2008-07-31

申请号：US11733767

申请日：2007-04-11

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

摘要： In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.

摘要翻译： 在等离子体反应器室中，天花板电极和工件支撑电极，各个VHF频率f1和f2的相应RF功率源耦合到电极中的相应电极或共同的一个电极，其中f1足够高以产生 中心高的不均匀等离子体离子分布和f2足够低以产生中心 - 低不均匀的等离子体离子分布。 提供各自的中心接地返回路径用于频率f1和f2直接通过天花板电极和工件支撑电极之间的RF电流，并为每个频率f1和f2提供边缘接地返回路径。 调整至少一个接地返回路径的阻抗，以便控制等离子体离子密度分布的均匀性。

公开(公告)号：US08076247B2

公开(公告)日：2011-12-13

申请号：US11733770

申请日：2007-04-11

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC分类号： H01L21/302

CPC分类号： C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

摘要： A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.

摘要翻译： 提供了一种用于在等离子体反应器室中处理工件的方法。 该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。 该方法还包括提供边缘接地返回路径。 该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。