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7 条记录 (耗时 0.018 秒)

    Method of trimming a gate electrode structure
    1.
    发明授权
    Method of trimming a gate electrode structure 有权
    修剪栅电极结构的方法

    公开(公告)号：US06852584B1

    公开(公告)日：2005-02-08

    申请号：US10756759

    申请日：2004-01-14

    申请人： Lee Chen ,  Hongyu Yue ,  Hiromitsu Kambara

    发明人： Lee Chen ,  Hongyu Yue ,  Hiromitsu Kambara

    IPC分类号： H01L21/28 ,  H01L21/3213 ,  H01L21/336

    CPC分类号： H01L21/32134 ,  H01L21/28123 ,  H01L21/32136 ,  H01L21/32137

    摘要： A method and processing tool are provided for trimming a gate electrode structure containing a gate electrode layer with a first dimension. A reaction layer is formed through reaction with the gate electrode structure. The reaction layer is the selectively removed from the unreacted portion of the gate electrode structure by chemical etching, thereby forming a trimmed gate electrode structure with a second dimension that is smaller than the first dimension. The trimming process can be carried out under process conditions where formation of the reaction layer is substantially self-limiting. The trimming process can be repeated to further reduce the dimension of the gate electrode structure.

    摘要翻译： 提供了一种用于修整含有第一尺寸的栅电极层的栅电极结构的方法和处理工具。 通过与栅电极结构反应形成反应层。 反应层通过化学蚀刻从栅电极结构的未反应部分选择性地除去，从而形成具有小于第一尺寸的第二尺寸的修整栅电极结构。 修整过程可以在反应层的形成基本上是自限制的工艺条件下进行。 可以重复修整过程以进一步减小栅电极结构的尺寸。

    Method and system for etching a high-k dielectric material
    3.
    发明申请
    Method and system for etching a high-k dielectric material 审中-公开
    蚀刻高k电介质材料的方法和系统

    公开(公告)号：US20050118353A1

    公开(公告)日：2005-06-02

    申请号：US10853026

    申请日：2004-05-25

    申请人： Lee Chen ,  Hiromitsu Kambara ,  Nobuhiro Iwama

    发明人： Lee Chen ,  Hiromitsu Kambara ,  Nobuhiro Iwama

    IPC分类号： H01L21/00 ,  H01L21/311 ,  H01L21/324 ,  H01L21/336 ,  H01L21/461 ,  H05H1/24

    CPC分类号： H01L21/31122

    摘要： A method for heating a substrate between a first process and a second process using a plasma is described. The heating method comprises thermally isolating the substrate on the substrate holder by removing the backside supply of a heat transfer gas and removing the clamping force. Furthermore, an inert gas, such as a Noble gas, is introduced to the plasma processing system and a plasma is ignited. The substrate is exposed to the inert plasma for a period of time sufficient to elevate the temperature of the substrate from a first temperature (i.e., typically less than 100° C.) to a second temperature (i.e., typically of order 400° C.).

    摘要翻译： 描述了使用等离子体在第一工艺和第二工艺之间加热衬底的方法。 加热方法包括通过去除传热气体的背面供应并去除夹紧力来热隔离衬底保持器上的衬底。 此外，诸如Noble气体的惰性气体被引入到等离子体处理系统中，并且等离子体被点燃。 将衬底暴露于惰性等离子体一段足以将衬底的温度从第一温度（即通常小于100℃）提升至第二温度的时间（即典型地为400℃） ）。

    Plasma processing system for treating a substrate
    4.
    发明授权
    Plasma processing system for treating a substrate 有权
    用于处理基材的等离子体处理系统

    公开(公告)号：US07396431B2

    公开(公告)日：2008-07-08

    申请号：US10953801

    申请日：2004-09-30

    申请人： Lee Chen ,  Hiromitsu Kambara ,  Caizhong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

    发明人： Lee Chen ,  Hiromitsu Kambara ,  Caizhong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01J37/32211 ,  H01J37/32082 ,  H01J37/32192

    摘要： A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.

    摘要翻译： 用于处理衬底的等离子体处理系统包括处理室，该处理室包括构造成容纳用于提供等离子体空间的第一气体的第一室部分和被配置为接收第二气体的第二室部分，用于提供具有处理化学物质的处理空间以处理 底物。 衬底保持器联接到处理室的第二室部分，并且被配置成在接近处理空间的位置支撑衬底，并且等离子体源耦合到处理室的第一室部分，并且被配置成在处理室中形成等离子体 等离子体空间 栅格位于等离子体空间和处理空间之间，并且被配置为允许等离子体在等离子体空间和处理空间之间的扩散，以便从工艺气体形成工艺化学物质。

    Plasma processing system for treating a substrate
    5.
    发明申请
    Plasma processing system for treating a substrate 有权
    用于处理基材的等离子体处理系统

    公开(公告)号：US20060065367A1

    公开(公告)日：2006-03-30

    申请号：US10953801

    申请日：2004-09-30

    申请人： Lee Chen ,  Hiromitsu Kambara ,  Caiz Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

    发明人： Lee Chen ,  Hiromitsu Kambara ,  Caiz Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

    IPC分类号： H01L21/306

    CPC分类号： H01J37/32211 ,  H01J37/32082 ,  H01J37/32192

    摘要： A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.

    摘要翻译： 用于处理衬底的等离子体处理系统包括处理室，该处理室包括构造成容纳用于提供等离子体空间的第一气体的第一室部分和被配置为接收第二气体的第二室部分，用于提供具有处理化学物质的处理空间以处理 底物。 衬底保持器联接到处理室的第二室部分，并且被配置成在接近处理空间的位置支撑衬底，并且等离子体源耦合到处理室的第一室部分，并且被配置成在处理室中形成等离子体 等离子体空间 栅格位于等离子体空间和处理空间之间，并且被配置为允许等离子体在等离子体空间和处理空间之间的扩散，以便从工艺气体形成工艺化学物质。

    Method and system for etching a high-k dielectric material
    6.
    发明授权
    Method and system for etching a high-k dielectric material 失效
    蚀刻高k电介质材料的方法和系统

    公开(公告)号：US07709397B2

    公开(公告)日：2010-05-04

    申请号：US10852685

    申请日：2004-05-25

    申请人： Lee Chen ,  Hiromitsu Kambara ,  Nobuhiro Iwama ,  Akiteru Ko ,  Hiromasa Mochiki ,  Masaaki Hagihara

    发明人： Lee Chen ,  Hiromitsu Kambara ,  Nobuhiro Iwama ,  Akiteru Ko ,  Hiromasa Mochiki ,  Masaaki Hagihara

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31122

    摘要： A method for etching a high-k dielectric layer on a substrate in a plasma processing system is described. The high-k dielectric layer can, for example, comprise HfO2. The method comprises elevating the temperature of the substrate above 200° C. (i.e., typically of order 400° C.), introducing a process gas comprising a halogen-containing gas, igniting a plasma from the process gas, and exposing the substrate to the plasma. The process gas can further include a reduction gas in order to improve the etch rate of HfO2 relative to Si and SiO2.

    摘要翻译： 描述了在等离子体处理系统中蚀刻衬底上的高k电介质层的方法。 高k电介质层可以例如包含HfO 2。 该方法包括将衬底的温度升高到200℃以上（即，通常为400℃），引入包含含卤素气体的工艺气体，从工艺气体点燃等离子体，并将衬底暴露于 等离子体。 工艺气体可以进一步包括还原气体，以便提高HfO 2相对于Si和SiO 2的蚀刻速率。