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公开(公告)号：US07396431B2
公开(公告)日：2008-07-08
申请号：US10953801
申请日：2004-09-30
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32211 , H01J37/32082 , H01J37/32192
摘要： A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.
摘要翻译： 用于处理衬底的等离子体处理系统包括处理室，该处理室包括构造成容纳用于提供等离子体空间的第一气体的第一室部分和被配置为接收第二气体的第二室部分，用于提供具有处理化学物质的处理空间以处理 底物。 衬底保持器联接到处理室的第二室部分，并且被配置成在接近处理空间的位置支撑衬底，并且等离子体源耦合到处理室的第一室部分，并且被配置成在处理室中形成等离子体 等离子体空间 栅格位于等离子体空间和处理空间之间，并且被配置为允许等离子体在等离子体空间和处理空间之间的扩散，以便从工艺气体形成工艺化学物质。
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公开(公告)号：US20100032094A1
公开(公告)日：2010-02-11
申请号：US12441429
申请日：2008-08-20
IPC分类号： H01L21/306 , C23C16/54
CPC分类号： H01L21/461 , C23C16/511 , H01J37/32192 , H01J37/3222 , H05H1/46 , Y10T428/24273
摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions provided in a radial pattern on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.
摘要翻译： 公开了一种设置在可以被抽真空的处理室的顶部的顶板。 顶棚板允许从天花板板设置的平面天线构件的槽口发射的微波通过顶板进入处理室，并且包括在天花板的表面上以放射状图案设置的多个突起部分， 表面朝向处理室的内部。
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公开(公告)号：US08480848B2
公开(公告)日：2013-07-09
申请号：US12095262
申请日：2006-11-15
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/3244
摘要： The present invention relates to a plasma processing apparatus including: a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum; a ceiling plate which is made of dielectric material and is airtightly mounted to an opening of the ceiling portion; a planar antenna member which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave, wherein a gas passage is formed to pass through the central conductor, the planar antenna member, and the ceiling plate, and an electric field attenuating recess for attenuating an electric field intensity of the center portion of the ceiling plate is installed on a top surface of a center area of the ceiling plate.
摘要翻译： 等离子体处理装置技术领域本发明涉及一种等离子体处理装置，其特征在于，包括：顶棚部分打开并且其内部可被抽真空的处理室; 由介电材料制成并且气密地安装到顶部的开口的顶板; 平面天线构件，其安装在所述顶板的顶面上，用于将微波导入所述处理室; 以及具有连接到平面天线构件的中心导体用于供给微波的同轴波导，其中形成气体通道以穿过中心导体，平面天线构件和顶板，并且电场衰减 用于衰减顶板的中心部分的电场强度的凹部安装在顶板的中心区域的顶表面上。
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公开(公告)号：US08343308B2
公开(公告)日：2013-01-01
申请号：US12441429
申请日：2008-08-20
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/461 , C23C16/511 , H01J37/32192 , H01J37/3222 , H05H1/46 , Y10T428/24273
摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural concave portions provided along a circle on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.
摘要翻译： 公开了一种设置在可以被抽真空的处理室的顶部的顶板。 顶板允许从天花板板一侧设置的平面天线构件的槽口发出的微波通过顶板进入处理室，并且包括沿着顶板的表面沿着圆形设置的多个凹部， 面向处理室的内部。
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公开(公告)号：US20090242130A1
公开(公告)日：2009-10-01
申请号：US12095262
申请日：2006-11-15
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/3244
摘要： The present invention relates to a plasma processing apparatus including: a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum; a ceiling plate which is made of dielectric material and is airtightly mounted to an opening of the ceiling portion; a planar antenna member which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave, wherein a gas passage is formed to pass through the central conductor, the planar antenna member, and the ceiling plate, and an electric field attenuating recess for attenuating an electric field intensity of the center portion of the ceiling plate is installed on a top surface of a center area of the ceiling plate.
摘要翻译： 等离子体处理装置技术领域本发明涉及一种等离子体处理装置，其特征在于，包括：顶棚部分打开并且其内部可被抽真空的处理室; 由介电材料制成并且气密地安装到顶部的开口的顶板; 平面天线构件，其安装在所述顶板的顶面上，用于将微波导入所述处理室; 以及具有连接到平面天线构件的中心导体用于供给微波的同轴波导，其中形成气体通道以穿过中心导体，平面天线构件和顶板，并且电场衰减 用于衰减顶板的中心部分的电场强度的凹部安装在顶板的中心区域的顶表面上。
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公开(公告)号：US20090266487A1
公开(公告)日：2009-10-29
申请号：US12094815
申请日：2006-11-15
申请人： Caizhong Tian , Tamaki Yuasa , Toshihisa Nozawa
发明人： Caizhong Tian , Tamaki Yuasa , Toshihisa Nozawa
IPC分类号： H01L21/465 , C23C16/511 , H05B6/64
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211
摘要： A microwave introduction device includes a microwave generator for generating a microwave of a predetermined frequency, a mode converter for converting the microwave into a predetermined oscillation mode, a planar antenna member arranged toward a predetermined space, and a coaxial waveguide connecting the mode converter with the planar antenna member to propagate the microwave. A central conductor of the coaxial waveguide is formed in a cylindrical shape, an inner diameter D1 of the central conductor is not smaller than a first predetermined value, and an outer conductor of the central conductor is also formed in a cylindrical shape. A ratio r1/r2 of a radius r1 of an inner diameter of the outer conductor to a radius r2 of an outer diameter of the central conductor is maintained at a second predetermined value and the inner diameter D2 the outer conductor is not greater than a third predetermined value.
摘要翻译： 微波引入装置包括用于产生预定频率的微波的微波发生器，用于将微波转换成预定振荡模式的模式转换器，朝向预定空间布置的平面天线部件以及将模式转换器与 平面天线部件传播微波。 同轴波导的中心导体形成为圆筒形状，中心导体的内径D1不小于第一预定值，中心导体的外导体也形成为圆柱形。 外导体的内径的半径r1与中心导体的外径的半径r2的比率r1 / r2保持在第二规定值，外径D2的外径不大于第三 预定值。
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公开(公告)号：US07895971B2
公开(公告)日：2011-03-01
申请号：US11576852
申请日：2005-10-06
申请人： Caizhong Tian , Toshihisa Nozawa
发明人： Caizhong Tian , Toshihisa Nozawa
IPC分类号： C23C16/00 , C23C14/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/511 , H01J37/32192 , H01J37/3222 , H01J37/32238 , H01J37/32266
摘要： A microwave plasma processing apparatus which easily ensures uniformity and stability of plasma in response to changes of process conditions and the like. The microwave plasma processing apparatus generates plasma of a process gas in a chamber by microwave and performs plasma processing to a work to be processed by using the plasma. On a plate composed of a conductor covering the outer circumference of a microwave transmitting board, two or more holes for propagating microwave from an edge part of the microwave transmitting board to an inner part of the plate are formed. Volume adjusting mechanisms and adjust the volume of the holes to adjust impedance of each unit when the microwave transmitting board is divided into individual units to which each of the holes belongs, and electric field distribution of the microwave transmitting board is controlled.
摘要翻译： 微波等离子体处理装置，其能够根据工艺条件等的变化容易地确保等离子体的均匀性和稳定性。 微波等离子体处理装置通过微波产生室内的处理气体的等离子体，并通过使用等离子体对待处理的工件进行等离子体处理。 在由覆盖微波发射板的外周的导体构成的板上，形成有用于将微波从微波发射板的边缘部传播到板的内部的两个以上的孔。 当微波发射板被分成各个孔所属的单独单元并且控制微波发射板的电场分布时，调节机构并调节孔的体积以调节每个单元的阻抗。
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8.发明申请TOP PLATE OF MICROWAVE PLASMA PROCESSING APPARATUS, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权微波等离子体处理装置顶板，等离子体处理装置和等离子体处理方法公开(公告)号：US20110000780A1
公开(公告)日：2011-01-06
申请号：US12867343
申请日：2009-02-10
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211 , H01J37/3222 , H01J37/32238
摘要： A plasma generation chamber of a plasma processing apparatus is closed by a top plate 3. The top plate 3 has recesses 3A on its surface facing the plasma generation chamber and a central recess 3B on an opposite surface. The top plate 3 is coupled to an antenna thereon. If a microwave is supplied to the antenna, the microwave is radiated through slots of the antenna. The microwave is propagated through the top plate 3 such that the microwave has a plane of polarization and the microwave forms a circularly polarized wave as a whole. Here, resonance absorption of the microwave occurs at a side surface of recesses 3A and the microwave is propagated within the recesses 3A in a single mode. Strong plasma can be generated within each of the recesses 3A, so that a stable plasma mode can be generated in the top plate 3.
摘要翻译： 等离子体处理装置的等离子体生成室由顶板3封闭。顶板3在其表面上具有面向等离子体产生室的凹部3A和位于相对表面上的中心凹部3B。 顶板3与天线耦合。 如果向天线提供微波，则微波通过天线的狭槽辐射。 微波通过顶板3传播，使得微波具有偏振面，微波整体形成圆偏振波。 这里，微波的共振吸收发生在凹部3A的侧面，微波在单个模式下在凹部3A内传播。 可以在每个凹部3A内产生强等离子体，从而可以在顶板3中产生稳定的等离子体模式。
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公开(公告)号：US20090183677A1
公开(公告)日：2009-07-23
申请号：US12357493
申请日：2009-01-22
IPC分类号： B05C9/14
CPC分类号： H01L21/67248 , H01L21/67098
摘要： Provided are a temperature control device capable of performing a temperature control of, e.g., a chamber wall of a processing apparatus with a high precision; and a processing apparatus using the same. The temperature control device 50 includes a plurality of heater units 51 for heating each of a multiplicity of zones 55 into which a wall portion of a housing 2 of a chamber 1 is divided; a multiplicity of heater power supplies 52 for supplying power to each of the plurality of heater units 51; a number of thermocouples 53 for measuring the temperature of each of the multiplicity of zones 55; and a plurality of controllers 54 for controlling a corresponding power supply unit by an ILQ control based on a signal from each temperature sensor to set a temperature of a corresponding zone to a preset target temperature.
摘要翻译： 提供一种温度控制装置，其能够以高精度执行例如处理装置的室壁的温度控制; 以及使用该处理装置的处理装置。 温度控制装置50包括多个加热器单元51，用于加热腔室1的壳体2的壁部被分割成的多个区域55中的每一个; 用于向多个加热器单元51中的每一个供电的多个加热器电源52; 用于测量多个区域55中的每一个的温度的多个热电偶53; 以及多个控制器54，用于通过基于来自每个温度传感器的信号的ILQ控制来控制相应的电源单元，以将相应区域的温度设定为预设的目标温度。
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公开(公告)号：US20080035058A1
公开(公告)日：2008-02-14
申请号：US11632779
申请日：2005-07-21
IPC分类号： H05H1/46 , H01L21/205 , H01L21/3065
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211
摘要： The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.
摘要翻译： 本发明提供一种等离子体处理单元，包括：处理容器，其顶部具有开口，能够在其中产生真空; 设置在处理容器中的用于在其上放置待处理物体的台阶; 由电介质制成的顶板，顶板气密地装配在开口中并允许微波通过; 平面天线部件，其设置在所述顶板上，所述平面天线部件设置有多个微波辐射孔，用于向所述处理容器的内部放射用于等离子体产生的微波; 设置在所述平面天线构件上的慢波构件，用于缩短微波的波长; 以及微波干扰抑制部，其设置在所述顶板的下表面上，所述微波干涉抑制部将所述下表面分割为多个同心区域，并抑制所述区域之间的微波干扰。
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