Method and system for combined photothermal modulated reflectance and photothermal IR radiometric system
    1.
    发明申请
    Method and system for combined photothermal modulated reflectance and photothermal IR radiometric system 失效
    光热调制反射和光热红外辐射系统的组合方法和系统

    公开(公告)号:US20050225765A1

    公开(公告)日:2005-10-13

    申请号:US11143203

    申请日:2005-06-02

    摘要: A method and apparatus for evaluating a semiconductor wafer. A combination of a photothermal modulated reflectance method and system with a photothermal IR radiometry system and method is utilized to provide information which can be used to determine properties of semiconductor wafers being evaluated. The system and method can provide for utilizing a common probe source and a common intensity modulated energy source. The system and method further provide an infrared detector for monitoring changes in infrared radiation emitted from a sample, and photodetector for monitoring changes in beam reflected from the sample.

    摘要翻译: 一种用于评估半导体晶片的方法和装置。 利用光热调制反射方法和具有光热IR辐射测量系统和方法的系统的组合来提供可用于确定被评估的半导体晶片的性质的信息。 该系统和方法可以提供利用公共探测源和共同的强度调制能量源。 该系统和方法还提供一种红外检测器,用于监测从样品发射的红外辐射的变化,以及用于监测从样品反射的光束变化的光电检测器。

    LED Solar Illuminator
    2.
    发明申请
    LED Solar Illuminator 失效
    LED太阳能照明器

    公开(公告)号:US20120256559A1

    公开(公告)日:2012-10-11

    申请号:US13081734

    申请日:2011-04-07

    IPC分类号: H05B37/02

    CPC分类号: H05B33/0803

    摘要: An apparatus for illuminating a target surface, the apparatus having a plurality of LED arrays, where each of the arrays has a plurality of individually addressable LEDs, and where at least one of the arrays is disposed at an angle of between about forty-five degrees and about ninety degrees relative to the target surface, where all of the arrays supply light into a light pipe, the light pipe having interior walls made of a reflective material, where light exiting the light pipe illuminates the target surface, and a controller for adjusting an intensity of the individually addressable light sources.

    摘要翻译: 一种用于照射目标表面的装置,该装置具有多个LED阵列,其中每个阵列具有多个独立可寻址的LED,并且其中至少一个阵列以大约四十五度之间的角度设置 并且相对于目标表面大约九十度,其中所有的阵列将光提供到光管中,光管具有由反射材料制成的内壁,其中离开光管的光照射目标表面,以及用于调节的控制器 独立寻址光源的强度。

    Modulated reflectance measurement system with multiple wavelengths
    3.
    发明授权
    Modulated reflectance measurement system with multiple wavelengths 有权
    多波长调制反射测量系统

    公开(公告)号:US07423757B2

    公开(公告)日:2008-09-09

    申请号:US11492583

    申请日:2006-07-25

    IPC分类号: G01N21/55

    摘要: A modulated reflectance measurement system includes three monochromatic diode-based lasers. Each laser can operate as a probe beam or as a pump beam source. The laser outputs are redirected using a series of mirrors and beam splitters to reach an objective lens. The objective lens focuses the laser outputs on a sample. Reflected energy returns through objective and is redirected by a beam splitter to a detector. A lock-in amplifier converts the output of the detector to produce quadrature (Q) and in-phase (I) signals for analysis. A Processor uses the Q and/or I signals to analyze the sample. By changing the number of lasers used as pump or probe beam sources, the measurement system can be optimized to measure a range of different samples types.

    摘要翻译: 调制反射测量系统包括三个基于单色二极管的激光器。 每个激光器可以作为探测光束或作为泵浦光源操作。 使用一系列反射镜和分束器将激光输出重定向到达物镜。 物镜将激光输出聚焦在样品上。 反射能量通过目标返回,并被分束器重定向到检测器。 锁定放大器转换检测器的输出以产生正交(Q)和同相(I)信号用于分析。 处理器使用Q和/或I信号来分析样本。 通过改变用作泵浦或探针光束源的激光器的数量,可以优化测量系统以测量不同样品类型的范围。

    Methods for depth profiling in semiconductors using modulated optical reflectance technology
    4.
    发明申请
    Methods for depth profiling in semiconductors using modulated optical reflectance technology 有权
    采用调制光学反射技术的半导体深度剖面方法

    公开(公告)号:US20080151247A1

    公开(公告)日:2008-06-26

    申请号:US11998118

    申请日:2007-11-28

    IPC分类号: G01N21/55

    摘要: Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.

    摘要翻译: 使用调制光学反射率(MOR)测量公开了获得掺杂剂和损伤深度分布信息的方法。 在一个方面,使用从诸如结深度,结突起和掺杂剂浓度的各种测量获得的信息来构建深度分布。 另一方面,开发了一个完整的理论模型。 实际测量被馈送到模型。 使用迭代方法,将实际测量与从模型计算的理论测量值进行比较,以确定实际深度分布。

    Method for measuring ion-implanted semiconductors with improved repeatability
    8.
    发明申请
    Method for measuring ion-implanted semiconductors with improved repeatability 失效
    用于测量具有改善的重复性的离子注入半导体的方法

    公开(公告)号:US20050195399A1

    公开(公告)日:2005-09-08

    申请号:US11067961

    申请日:2005-02-28

    IPC分类号: G01N21/55

    CPC分类号: G01N21/171 H01L22/12

    摘要: The repeatability of wafer uniformity measurements can be increased by taking spatially averaged measurements of wafer response. By increasing the time over which measurements are obtained, the amount of noise can be significantly reduced, thereby improving the repeatability of the measurements. These measurements can be taken at several locations on the wafer to ensure wafer uniformity. In order to get a stable and repeatable assessment of the wafer process, addressing uncertainties related to damage relaxation or incomplete anneal, an anneal decay factor (ADF) characterization can be performed at a distance away from the TW measurement boxes. From the ADF measurement and the spatially averaged measurements of wafer response, a repeatable assessment of the wafer process can be obtained.

    摘要翻译: 通过采用晶圆响应的空间平均测量可以提高晶片均匀性测量的重复性。 通过增加获得测量的时间,可以显着降低噪声量,从而提高测量的重复性。 这些测量可以在晶片上的几个位置进行,以确保晶片的均匀性。 为了获得对晶圆工艺的稳定和可重复的评估,解决与损伤弛豫或不完全退火有关的不确定性,可以在远离TW测量箱的距离处执行退火衰减因子(ADF)表征。 从ADF测量和晶片响应的空间平均测量,可以获得晶片工艺的可重复评估。

    Method and apparatus for detection of defects in teeth
    9.
    发明授权
    Method and apparatus for detection of defects in teeth 有权
    用于检测牙齿缺陷的方法和装置

    公开(公告)号:US06584341B1

    公开(公告)日:2003-06-24

    申请号:US09628812

    申请日:2000-07-28

    IPC分类号: A61B600

    CPC分类号: A61B5/0088

    摘要: There is provided a metrologic methodology and instrument, useful for a high-spatial-resolution dynamic diagnostic metrology and instrument, which can provide simultaneous measurements of laser-induced frequency-domain infrared photothermal radiometry (FD-PTR) and alternating-current (ac) modulated luminescence (FD-LM) signals from defects and caries in teeth intraorally. The combination of the luminescence and radiometric frequency scan techniques for inspection of defects and caries in teeth involves irradiating the tooth with a modulated (direct-current (dc) to 100 kHz) excitation source (laser) emitting in the near-ultraviolet, visible, or near-infrared spectral range, generating blackbody Planck-radiation (infrared radiometry) and ac luminescence, and comparing the obtained (amplitude and phase) luminescence and radiometric signals to those obtained from a well characterized sample (reference) to provide the clinician with numerical information on the status of a tooth. The method and device is used to scan teeth intraorally to detect caries and classify caries or the integrity of the enamel or cementum surface, classify the health and integrity of the enamel at the base of occlusal fissures, classify the health and integrity of enamel or cementum surface of the tooth and defects around the margins of restorations, locate the presence of cracks on the enamel or cementum surface, and locate and characterize cracks in dentin on prepared teeth.

    摘要翻译: 提供了一种用于高空间分辨率动态诊断计量和仪器的计量方法和仪器,可以提供激光诱导的频域红外光热辐射测量(FD-PTR)和交流(ac) 调制发光(FD-LM)信号从牙齿中的缺陷和龋齿。 用于检查牙齿中的缺陷和龋齿的发光和辐射测量频率扫描技术的组合包括用在近紫外线,可见光区域中发射的调制(直流(dc)至100kHz)激发源(激光)照射牙齿, 或近红外光谱范围,产生黑体普朗克辐射(红外辐射测量)和交流发光,并将获得的(振幅和相位)发光和辐射信号与从良好表征的样品(参考)获得的信号进行比较,以向临床医生提供数字 关于牙齿状况的信息。 该方法和装置用于口内扫描牙齿以检测龋齿和分类龋齿或釉质或牙骨质表面的完整性,将牙釉质基底处的牙釉质的健康和完整性分类,分类牙釉质或牙骨质的健康和完整性 牙齿表面和修复边缘周围的缺陷,定位在牙釉质或牙骨质表面上存在裂纹,并定位并表征牙齿上的牙质上的裂纹。

    Methods for depth profiling in semiconductors using modulated optical reflectance technology
    10.
    发明授权
    Methods for depth profiling in semiconductors using modulated optical reflectance technology 有权
    采用调制光学反射技术的半导体深度剖面方法

    公开(公告)号:US07705977B2

    公开(公告)日:2010-04-27

    申请号:US11998118

    申请日:2007-11-28

    IPC分类号: G01N21/00

    摘要: Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.

    摘要翻译: 使用调制光学反射率(MOR)测量公开了获得掺杂剂和损伤深度分布信息的方法。 在一个方面,使用从诸如结深度,结突起和掺杂剂浓度的各种测量获得的信息来构建深度分布。 另一方面,开发了一个完整的理论模型。 实际测量被馈送到模型。 使用迭代方法,将实际测量与从模型计算的理论测量值进行比较,以确定实际深度分布。