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公开(公告)号：US09728682B2
公开(公告)日：2017-08-08
申请号：US15199477
申请日：2016-06-30
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor： Te-Chung Wang , Shih-Huan Lai , Shiou-Yi Kuo
CPC classification number: H01L33/46 , H01L27/156 , H01L33/32 , H01L33/38 , H01L33/382
Abstract: A light-emitting element is provided, including: a light-emitting unit sequentially comprising a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer, wherein the light-emitting unit has an opening through the second-type semiconductor layer and the light-emitting layer to expose a portion of the first-type semiconductor layer; a current-conduction layer disposed on the second-type semiconductor layer; a first electrode disposed on the current-conduction layer and exposing a portion thereof; a distributed Bragg reflector disposed on the first electrode and covering the exposed portion of the current-conduction layer; and a second electrode disposed on the distributed Bragg reflector and filling the opening to electrically connect to the first-type semiconductor layer.
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公开(公告)号：US09257609B2
公开(公告)日：2016-02-09
申请号：US14325215
申请日：2014-07-07
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor： Nai-Wei Hsu , Te-Chung Wang
CPC classification number: H01L33/405 , H01L33/44
Abstract: A light-emitting diode (LED) chip is disclosed. The chip includes a light-emitting diode and an electrode layer on the light-emitting diode. The electrode layer includes a reflective metal layer. The reflective metal layer includes a first composition and a second composition. The first composition includes aluminum or silver, and the second composition includes copper, silicon, tin, platinum, gold or a combination thereof. The weight percentage of the second composition is greater than 0% and less than 20%.
Abstract translation: 公开了一种发光二极管（LED）芯片。 该芯片包括发光二极管和发光二极管上的电极层。 电极层包括反射金属层。 反射金属层包括第一组合物和第二组合物。 第一组合物包括铝或银，第二组合物包括铜，硅，锡，铂，金或其组合。 第二组合物的重量百分比大于0％且小于20％。
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公开(公告)号：US11978832B2
公开(公告)日：2024-05-07
申请号：US18172283
申请日：2023-02-21
Applicant: Lextar Electronics Corporation
Inventor： Te-Chung Wang , Shiou-Yi Kuo
CPC classification number: H01L33/486 , H01L21/0228 , H01L29/0665 , H01L33/52 , H01L2924/12041
Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.
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公开(公告)号：US11289625B2
公开(公告)日：2022-03-29
申请号：US16742891
申请日：2020-01-14
Applicant: Lextar Electronics Corporation
Inventor： Shiou-Yi Kuo , Te-Chung Wang
Abstract: A light emitting diode includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a patterned electrode layer, a flat layer and a reflective layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. The second type semiconductor layer includes a first surface and a second surface having a first arithmetic mean roughness. The patterned electrode layer is disposed on the second surface of the second type semiconductor layer. The planarization layer is disposed on the second type semiconductor layer. The planarization layer includes a third surface and a fourth surface. The third surface is in contact with the second surface of the second type semiconductor layer. The fourth surface has a second arithmetic mean roughness that is less than the first arithmetic mean roughness.
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公开(公告)号：US09287461B2
公开(公告)日：2016-03-15
申请号：US14054303
申请日：2013-10-15
Applicant: Lextar Electronics Corporation
Inventor： Chia-Lin Hsiao , Nai-Wei Hsu , Te-Chung Wang , Tsung-Yu Yang
CPC classification number: H01L33/14 , H01L33/0008 , H01L33/005 , H01L33/20 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/42 , H01L2933/0016 , Y10S977/734 , Y10S977/95
Abstract: The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer.
Abstract translation: 本发明提供一种发光二极管及其制造方法。 发光二极管包括N型金属电极，与N型金属电极接触的N型半导体层，P型半导体层，介于N型半导体层和N型半导体层之间的发光层 P型半导体层，位于P型半导体层上的低接触电阻材料层，覆盖低接触电阻材料层和P型半导体层的透明导电层，以及P型金属 电极位于透明导电层上。
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Patent Agency Ranking
公开(公告)号：US09252332B1
公开(公告)日：2016-02-02
申请号：US14706266
申请日：2015-05-07
Applicant: Lextar Electronics Corporation
Inventor： Shiou-Yi Kuo , Te-Chung Wang
CPC classification number: H01L33/44 , H01L25/0753 , H01L33/382 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A light emitting diode structure includes a first contact electrode, a first insulating layer, a second contact electrode, a second insulating layer, a first barrier layer, a second barrier layer, a first illuminant epitaxial structure, and a second illuminant epitaxial structure. The first contact electrode includes a first protruding portion. The first insulating layer covers the first contact electrode and exposes a top of the first protruding portion. The second contact electrode is located on the first insulating layer and includes a second protruding portion. The second insulating layer covers the second contact electrode and exposes a top of the second protruding portion. The first barrier layer is located on the second insulating layer and is electrically connected to the second contact electrode. The second barrier layer is located on the second insulating layer.
Abstract translation: 发光二极管结构包括第一接触电极，第一绝缘层，第二接触电极，第二绝缘层，第一势垒层，第二势垒层，第一光源外延结构和第二光源外延结构。 第一接触电极包括第一突出部分。 第一绝缘层覆盖第一接触电极并暴露第一突出部分的顶部。 第二接触电极位于第一绝缘层上并且包括第二突出部分。 第二绝缘层覆盖第二接触电极并暴露第二突出部分的顶部。 第一阻挡层位于第二绝缘层上并与第二接触电极电连接。 第二阻挡层位于第二绝缘层上。
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公开(公告)号：US20140225150A1
公开(公告)日：2014-08-14
申请号：US14054303
申请日：2013-10-15
Applicant: Lextar Electronics Corporation
Inventor： Chia-Lin HSIAO , Nai-Wei Hsu , Te-Chung Wang , Tsung-Yu Yang
IPC: H01L33/42
CPC classification number: H01L33/14 , H01L33/0008 , H01L33/005 , H01L33/20 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/42 , H01L2933/0016 , Y10S977/734 , Y10S977/95
Abstract: The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer.
Abstract translation: 本发明提供一种发光二极管及其制造方法。 发光二极管包括N型金属电极，与N型金属电极接触的N型半导体层，P型半导体层，介于N型半导体层和N型半导体层之间的发光层 P型半导体层，位于P型半导体层上的低接触电阻材料层，覆盖低接触电阻材料层和P型半导体层的透明导电层，以及P型金属 电极位于透明导电层上。
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公开(公告)号：US11616173B2
公开(公告)日：2023-03-28
申请号：US17308070
申请日：2021-05-05
Applicant: Lextar Electronics Corporation
Inventor： Te-Chung Wang , Shiou-Yi Kuo
Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.
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公开(公告)号：US11038088B2
公开(公告)日：2021-06-15
申请号：US16600577
申请日：2019-10-14
Applicant: Lextar Electronics Corporation
Inventor： Te-Chung Wang , Shiou-Yi Kuo
Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.
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公开(公告)号：US10211598B2
公开(公告)日：2019-02-19
申请号：US15638356
申请日：2017-06-29
Applicant: Lextar Electronics Corporation
Inventor： Te-Chung Wang , Shiou-Yi Kuo , Jun-Rong Chen
Abstract: A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively.
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