公开(公告)号：US09812614B2

公开(公告)日：2017-11-07

申请号：US15176102

申请日：2016-06-07

申请人： LEXTAR ELECTRONICS CORPORATION

发明人： Shiou-Yi Kuo ,  Shih-Huan Lai

IPC分类号： H01L33/00 ,  H01L33/40 ,  H01L33/38 ,  H01L33/62 ,  H01L33/46

CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62

摘要： A light-emitting device is provided, including: a substrate; a reflective layer disposed on the substrate; a patterned contact layer disposed on the reflective layer; a light-emitting unit disposed on the patterned contact layer; a first electrode disposed on a top surface of the light-emitting unit; and a second electrode disposed on a bottom surface of the light-emitting unit; wherein a projection of the first electrode on the substrate and a projection of the patterned contact layer on the substrate are complementary to each other.

公开(公告)号：US10693037B2

公开(公告)日：2020-06-23

申请号：US15434075

申请日：2017-02-16

申请人： Lextar Electronics Corporation

发明人： Shiou-Yi Kuo ,  Shih-Huan Lai

IPC分类号： H01L33/10 ,  H01L33/40 ,  H01L33/14 ,  H01L33/42 ,  H01L33/20

摘要： A light emitting diode structure includes a first type semiconductor layer, a second type semiconductor layer, an active layer disposed therebetween, and a reflective stacked layer. The reflective stacked layer includes a first reflective layer and a second reflective layer. The first reflective layer is disposed at a side of the second type semiconductor layer opposing the active layer. The second reflective layer is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer. A vertical projection area of the second reflective layer on the second-type semiconductor layer is greater than that of the first reflective layer thereon. The second reflective layer has a better resistance to migration than the first reflective layer.

公开(公告)号：US20170047484A1

公开(公告)日：2017-02-16

申请号：US15168285

申请日：2016-05-31

申请人： Lextar Electronics Corporation

发明人： Shiou-Yi Kuo ,  Te-Chung Wang ,  Shih-Huan Lai

IPC分类号： H01L33/46 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L33/46 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/62

摘要： A semiconductor light emitting structure includes a first type semiconductor layer, an active layer, a second type semiconductor layer, an electrode, a transparent conductive layer, a Bragg reflective layer and a metal layer. The first type semiconductor layer, the active layer and the second type semiconductor layer are stacked sequentially to form an epitaxy layer. The electrode is formed on the first type semiconductor layer. The transparent conductive layer is formed on the second type semiconductor layer. The Bragg reflective layer is formed on the transparent conductive layer. The Bragg reflective layer and electrode are disposed on opposite sides of the epitaxy layer. The metal layer is formed on the Bragg reflective layer. The Bragg reflective layer has a concave portion into which the metal layer is put. The metal layer has a current conducting portion embedded into the concave portion and electrically connected to the transparent conductive layer.

摘要翻译： 半导体发光结构包括第一类型半导体层，有源层，第二类型半导体层，电极，透明导电层，布拉格反射层和金属层。 第一类型半导体层，有源层和第二类型半导体层依次层叠以形成外延层。 电极形成在第一类型半导体层上。 透明导电层形成在第二类型半导体层上。 在透明导电层上形成布拉格反射层。 布拉格反射层和电极设置在外延层的相对侧上。 金属层形成在布拉格反射层上。 布拉格反射层具有凹入部分，金属层放入其中。 金属层具有嵌入到凹部中并电连接到透明导电层的电流传导部分。

公开(公告)号：US09728682B2

公开(公告)日：2017-08-08

申请号：US15199477

申请日：2016-06-30

申请人： LEXTAR ELECTRONICS CORPORATION

发明人： Te-Chung Wang ,  Shih-Huan Lai ,  Shiou-Yi Kuo

IPC分类号： H01L33/46 ,  H01L33/38 ,  H01L27/15 ,  H01L33/32

CPC分类号： H01L33/46 ,  H01L27/156 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382

摘要： A light-emitting element is provided, including: a light-emitting unit sequentially comprising a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer, wherein the light-emitting unit has an opening through the second-type semiconductor layer and the light-emitting layer to expose a portion of the first-type semiconductor layer; a current-conduction layer disposed on the second-type semiconductor layer; a first electrode disposed on the current-conduction layer and exposing a portion thereof; a distributed Bragg reflector disposed on the first electrode and covering the exposed portion of the current-conduction layer; and a second electrode disposed on the distributed Bragg reflector and filling the opening to electrically connect to the first-type semiconductor layer.

公开(公告)号：US20160163923A1

公开(公告)日：2016-06-09

申请号：US14939463

申请日：2015-11-12

申请人： Lextar Electronics Corporation

发明人： Shiou-Yi Kuo ,  Shih-Huan Lai

IPC分类号： H01L33/10

CPC分类号： H01L33/10 ,  H01L33/145 ,  H01L33/20 ,  H01L33/405 ,  H01L33/42

摘要： A light emitting diode structure includes a first type semiconductor layer, a second type semiconductor layer, an active layer disposed therebetween, and a reflective stacked layer. The reflective stacked layer includes a first reflective layer and a second reflective layer. The first reflective layer is disposed at a side of the second type semiconductor layer opposing the active layer. The second reflective layer is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer. A vertical projection area of the second reflective layer on the second-type semiconductor layer is greater than that of the first reflective layer thereon. The second reflective layer has a better resistance to migration than the first reflective layer.

摘要翻译： 发光二极管结构包括第一类型半导体层，第二类型半导体层，设置在其间的有源层和反射层叠层。 反射层叠层包括第一反射层和第二反射层。 第一反射层设置在与有源层相对的第二类型半导体层的一侧。 第二反射层设置在与第二类型半导体层相对的第一反射层的一侧，并且沿着第一反射层的侧表面延伸到第二类型半导体层的表面。 第二类型半导体层上的第二反射层的垂直投影面积大于其上的第一反射层的垂直投影面积。 第二反射层具有比第一反射层更好的耐迁移性。