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公开(公告)号：US11588078B2
公开(公告)日：2023-02-21
申请号：US16931463
申请日：2020-07-17
发明人： Shiou-Yi Kuo , Jian-Chin Liang , Yu-Chun Lee , Fu-Hsin Chen , Chih-Hao Lin
摘要： A light emitting device includes an LED die and a wavelength conversion layer. The LED die has a light emitting top surface and light emitting side surfaces. The wavelength conversion layer contains quantum dots and a photosensitive material, and is located on the light emitting top surface. A light emitting module including multiple light emitting devices is also disclosed.
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公开(公告)号：US10283497B2
公开(公告)日：2019-05-07
申请号：US15361475
申请日：2016-11-27
发明人： Shiou-Yi Kuo , Chao-Hsien Lin , Ya-Ru Yang
IPC分类号： H01L33/00 , H01L27/02 , H01L29/866 , H01L29/872 , H01L33/52 , H01L33/62 , H01L27/15 , H01L33/38 , H01L25/16
摘要： The present invention provides a light-emitting diode (LED) chip. The LED chip includes a LED structure and an electrostatic discharge (ESD) protection structure. The ESD protection structure is in a corner of the LED chip and connects with the LED structure in anti-parallel. An interface between the LED structure and the ESD protection structure is a straight line from a top view.
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公开(公告)号：US10043950B2
公开(公告)日：2018-08-07
申请号：US15293403
申请日：2016-10-14
发明人： Shiou-Yi Kuo , Chao-Hsien Lin , Ya-Ru Yang
摘要： A semiconductor light-emitting structure and a semiconductor package structure thereof are provided. The semiconductor light-emitting structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a metal layer and a distributed Bragg reflector. The active layer is disposed on the first-type semiconductor layer. The second-type semiconductor layer is disposed on the active layer. The metal layer is disposed on the second-type semiconductor layer as a first reflective structure, wherein the metal layer has an opening portion. The distributed Bragg reflector is disposed on the metal layer and interposed into the opening portion as a second reflective structure. The first reflective structure and the second reflective structure form a reflective surface on the second-type semiconductor layer.
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公开(公告)号：US09728682B2
公开(公告)日：2017-08-08
申请号：US15199477
申请日：2016-06-30
发明人： Te-Chung Wang , Shih-Huan Lai , Shiou-Yi Kuo
CPC分类号： H01L33/46 , H01L27/156 , H01L33/32 , H01L33/38 , H01L33/382
摘要： A light-emitting element is provided, including: a light-emitting unit sequentially comprising a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer, wherein the light-emitting unit has an opening through the second-type semiconductor layer and the light-emitting layer to expose a portion of the first-type semiconductor layer; a current-conduction layer disposed on the second-type semiconductor layer; a first electrode disposed on the current-conduction layer and exposing a portion thereof; a distributed Bragg reflector disposed on the first electrode and covering the exposed portion of the current-conduction layer; and a second electrode disposed on the distributed Bragg reflector and filling the opening to electrically connect to the first-type semiconductor layer.
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公开(公告)号：US20160163923A1
公开(公告)日：2016-06-09
申请号：US14939463
申请日：2015-11-12
发明人： Shiou-Yi Kuo , Shih-Huan Lai
IPC分类号： H01L33/10
CPC分类号： H01L33/10 , H01L33/145 , H01L33/20 , H01L33/405 , H01L33/42
摘要： A light emitting diode structure includes a first type semiconductor layer, a second type semiconductor layer, an active layer disposed therebetween, and a reflective stacked layer. The reflective stacked layer includes a first reflective layer and a second reflective layer. The first reflective layer is disposed at a side of the second type semiconductor layer opposing the active layer. The second reflective layer is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer. A vertical projection area of the second reflective layer on the second-type semiconductor layer is greater than that of the first reflective layer thereon. The second reflective layer has a better resistance to migration than the first reflective layer.
摘要翻译： 发光二极管结构包括第一类型半导体层，第二类型半导体层，设置在其间的有源层和反射层叠层。 反射层叠层包括第一反射层和第二反射层。 第一反射层设置在与有源层相对的第二类型半导体层的一侧。 第二反射层设置在与第二类型半导体层相对的第一反射层的一侧，并且沿着第一反射层的侧表面延伸到第二类型半导体层的表面。 第二类型半导体层上的第二反射层的垂直投影面积大于其上的第一反射层的垂直投影面积。 第二反射层具有比第一反射层更好的耐迁移性。
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公开(公告)号：US11978832B2
公开(公告)日：2024-05-07
申请号：US18172283
申请日：2023-02-21
发明人： Te-Chung Wang , Shiou-Yi Kuo
CPC分类号： H01L33/486 , H01L21/0228 , H01L29/0665 , H01L33/52 , H01L2924/12041
摘要： A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.
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公开(公告)号：US11430935B2
公开(公告)日：2022-08-30
申请号：US17134549
申请日：2020-12-28
发明人： Shiou-Yi Kuo
摘要： A light emitting diode includes a base layer, an electric contact layer, a semiconductor stack, and an insulation layer. The base layer has a maximum of a first width. The electric contact layer has a maximum of a second width and is disposed on the base layer. The semiconductor stack disposed on the electric contact layer has a maximum of a third width, and includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer stacked in sequence, wherein a width of the first type semiconductor layer is smaller than the maximum of the third width. The insulation layer covers the sidewalls of the base layer, the electric contact layer, and the semiconductor stack. The maximum of the second width is greater than the maximum of the third width and the maximum of the second width is less than the maximum of the first width.
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公开(公告)号：US11289625B2
公开(公告)日：2022-03-29
申请号：US16742891
申请日：2020-01-14
发明人： Shiou-Yi Kuo , Te-Chung Wang
摘要： A light emitting diode includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a patterned electrode layer, a flat layer and a reflective layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. The second type semiconductor layer includes a first surface and a second surface having a first arithmetic mean roughness. The patterned electrode layer is disposed on the second surface of the second type semiconductor layer. The planarization layer is disposed on the second type semiconductor layer. The planarization layer includes a third surface and a fourth surface. The third surface is in contact with the second surface of the second type semiconductor layer. The fourth surface has a second arithmetic mean roughness that is less than the first arithmetic mean roughness.
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公开(公告)号：US11152540B2
公开(公告)日：2021-10-19
申请号：US16524202
申请日：2019-07-29
发明人： Shiou-Yi Kuo
摘要： A light emitting diode structure includes a semiconductor stack and a supporting breakpoint. The semiconductor stack includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The first semiconductor layer has a light emitting surface exposed outside and the light emitting surface has a rough texture. The light emitting layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the light emitting layer, and the second semiconductor layer has a type that is different from the first semiconductor layer. The supporting breakpoint is on the light emitting surface. The light emitting diode structure can be applied in wide color gamut (WCG) backlight module or ultra-thin backlight module.
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公开(公告)号：US10693037B2
公开(公告)日：2020-06-23
申请号：US15434075
申请日：2017-02-16
发明人： Shiou-Yi Kuo , Shih-Huan Lai
摘要： A light emitting diode structure includes a first type semiconductor layer, a second type semiconductor layer, an active layer disposed therebetween, and a reflective stacked layer. The reflective stacked layer includes a first reflective layer and a second reflective layer. The first reflective layer is disposed at a side of the second type semiconductor layer opposing the active layer. The second reflective layer is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer. A vertical projection area of the second reflective layer on the second-type semiconductor layer is greater than that of the first reflective layer thereon. The second reflective layer has a better resistance to migration than the first reflective layer.
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