公开(公告)号：US20130026493A1

公开(公告)日：2013-01-31

申请号：US13366658

申请日：2012-02-06

申请人： Lin Cheng ,  Anant K. Agarwal ,  Michael John O'Loughlin ,  Albert Augustus Burk, JR. ,  John Williams Palmour

发明人： Lin Cheng ,  Anant K. Agarwal ,  Michael John O'Loughlin ,  Albert Augustus Burk, JR. ,  John Williams Palmour

IPC分类号： H01L29/24

CPC分类号： H01L29/7813 ,  H01L29/0615 ,  H01L29/0661 ,  H01L29/1004 ,  H01L29/1016 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/732 ,  H01L29/7397 ,  H01L29/74 ,  H01L29/745 ,  H01L29/861

摘要： The present disclosure relates to a Silicon Carbide (SiC) semiconductor device having both a high blocking voltage and low on-resistance. In one embodiment, the semiconductor device has a blocking voltage of at least 10 kilovolts (kV) and an on-resistance of less than 10 milli-ohms centimeter squared (mΩ·cm2) and even more preferably less than 5 mΩ·cm2. In another embodiment, the semiconductor device has a blocking voltage of at least 15 kV and an on-resistance of less than 15 mΩ·cm2 and even more preferably less than 7 mΩ·cm2. In yet another embodiment, the semiconductor device has a blocking voltage of at least 20 kV and an on-resistance of less than 20 mΩ·cm2 and even more preferably less than 10 mΩ·cm2. The semiconductor device is preferably, but not necessarily, a thyristor such as a power thyristor, a Bipolar Junction Transistor (BJT), an Insulated Gate Bipolar Transistor (IGBT), or a PIN diode.

摘要翻译： 本发明涉及具有高阻断电压和低导通电阻的碳化硅（SiC）半导体器件。 在一个实施例中，半导体器件具有至少10千伏（kV）的阻断电压和小于10毫欧平方厘米（mΩ·cm 2·cm 2）的导通电阻，甚至更优选小于5mΩ 。 在另一个实施例中，半导体器件具有至少15kV的阻断电压和小于15mΩ/ cm 2，甚至更优选小于7mΩ的导通电阻。 在另一个实施例中，半导体器件具有至少20kV的阻断电压和小于20mΩ的导通电阻，并且甚至更优选地小于10mΩ·cm 2。 半导体器件优选但不一定是晶闸管，例如功率晶闸管，双极结晶体管（BJT），绝缘栅双极晶体管（IGBT）或PIN二极管。

公开(公告)号：US20140070230A1

公开(公告)日：2014-03-13

申请号：US13610993

申请日：2012-09-12

申请人： Michael John O'Loughlin ,  Lin Cheng ,  Albert Augustus Burk, JR. ,  Anant Kumar Agarwal

发明人： Michael John O'Loughlin ,  Lin Cheng ,  Albert Augustus Burk, JR. ,  Anant Kumar Agarwal

IPC分类号： H01L29/16 ,  H01L21/02

摘要： A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.

摘要翻译： 公开了半导体管芯和半导体管芯的制造工艺。 半导体管芯在衬底上具有衬底和碳化硅（SiC）外延结构。 SiC外延结构至少包括已经注入到SiC外延结构的表面中的第一N型SiC层，至少第一P型SiC层和碳空位还原材料。 此外，SiC外延结构已经被退火以动员碳空位还原材料以弥散基本上贯穿整个SiC外延结构的碳原子，从而增加了SiC外延结构中的平均载流子寿命。

公开(公告)号：US20110312159A1

公开(公告)日：2011-12-22

申请号：US12907556

申请日：2010-10-19

申请人： Adam William Saxler ,  Albert Augustus Burk, JR.

发明人： Adam William Saxler ,  Albert Augustus Burk, JR.

IPC分类号： H01L21/20

CPC分类号： H01L21/02507 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02642

摘要： A semiconductor structure includes a first layer of a nitride semiconductor material, a substantially unstrained nitride interlayer on the first layer of nitride semiconductor material, and a second layer of a nitride semiconductor material on the nitride interlayer. The nitride interlayer has a first lattice constant and may include aluminum and gallium and may be conductively doped with an n-type dopant. The first layer and the second layer together have a thickness of at least about 0.5 μm. The nitride semiconductor material may have a second lattice constant, such that the first layer may be more tensile strained on one side of the nitride interlayer than the second layer may be on the other side of the nitride interlayer.

摘要翻译： 半导体结构包括氮化物半导体材料的第一层，第一氮化物半导体材料层上的基本无应变的氮化物中间层，以及氮化物中间层上的氮化物半导体材料的第二层。 氮化物中间层具有第一晶格常数，并且可以包括铝和镓，并且可以导电掺杂n型掺杂剂。 第一层和第二层一起具有至少约0.5μm的厚度。 氮化物半导体材料可以具有第二晶格常数，使得第一层可能在氮化物中间层的一侧上比在氮化物中间层的另一侧上的拉伸应变更大。