公开(公告)号：USD607451S1

公开(公告)日：2010-01-05

申请号：US29323214

申请日：2008-08-21

Applicant: Lin-Quan Wang ,  Tzu-Chin Lin

Designer： Lin-Quan Wang ,  Tzu-Chin Lin

公开(公告)号：US08601407B2

公开(公告)日：2013-12-03

申请号：US13217345

申请日：2011-08-25

Applicant: Hung-Chun Wang ,  Pei-Shiang Chen ,  Tzu-Chin Lin ,  Cheng-Hung Chen ,  Shih-Chi Wang ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

Inventor： Hung-Chun Wang ,  Pei-Shiang Chen ,  Tzu-Chin Lin ,  Cheng-Hung Chen ,  Shih-Chi Wang ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

IPC: G06F17/50

CPC classification number: G03F7/2059

Abstract: Provided is a method of performing a maskless lithography process. The method includes providing a proximity correction pattern. The method includes generating a deformed pattern based on the proximity correction pattern. The method includes performing a first convolution process to the proximity correction pattern to generate a first proximity correction pattern contour. The method includes processing the first proximity correction pattern contour to generate a second proximity correction pattern contour. The method includes performing a second convolution process to the deformed pattern to generate a first deformed pattern contour. The method includes processing the first deformed pattern contour to generate a second deformed pattern contour. The method includes identifying mismatches between the second proximity correction pattern contour and the second deformed pattern contour. The method includes determining whether the deformed pattern is lithography-ready in response to the identifying.

Abstract translation: 提供了进行无掩模光刻处理的方法。 该方法包括提供接近校正模式。 该方法包括基于接近校正图案生成变形图案。 该方法包括对接近校正图案执行第一卷积处理以产生第一邻近校正图案轮廓。 该方法包括处理第一接近校正图案轮廓以产生第二邻近校正图案轮廓。 该方法包括对变形图案执行第二卷积处理以产生第一变形图案轮廓。 该方法包括处理第一变形图案轮廓以产生第二变形图案轮廓。 该方法包括识别第二接近校正图案轮廓和第二变形图案轮廓之间的不匹配。 该方法包括响应于识别确定变形图案是否是光刻刻画的。

公开(公告)号：US08468473B1

公开(公告)日：2013-06-18

申请号：US13492408

申请日：2012-06-08

Applicant: Hung-Chun Wang ,  Tzu-Chin Lin ,  Chia-Chi Lin ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

Inventor： Hung-Chun Wang ,  Tzu-Chin Lin ,  Chia-Chi Lin ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

IPC: G06F17/50

CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70475 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31771

Abstract: The present disclosure describes a method of forming a pattern by an electron beam lithography system. The method includes receiving an integrated circuit (IC) design layout data having a polygon and a forbidden pattern, modifying the polygon and the forbidden pattern using an electron proximity correction (EPC) technique, stripping the modified polygon into subfields, converting the stripped polygon to an electron beam writer format data, and writing the electron beam writer formatted polygon onto a substrate by an electron beam writer. Stripping the modified polygon includes finding the modified forbidden pattern as a reference layer, and stitching the modified polygon to avoid stitching the modified forbidden pattern.

Abstract translation: 本公开描述了通过电子束光刻系统形成图案的方法。 该方法包括接收具有多边形和禁止图案的集成电路（IC）设计布局数据，使用电子接近校正（EPC）技术修改多边形和禁止图案，将修改的多边形剥离成子字段，将剥离的多边形转换为 电子束写入器格式数据，并通过电子束写入器将电子束写入器格式化的多边形写入到衬底上。 剥离修改的多边形包括找到修改的禁止图案作为参考层，并且修剪修改的多边形以避免修改修改的禁止图案。

公开(公告)号：US20130061187A1

公开(公告)日：2013-03-07

申请号：US13225617

申请日：2011-09-06

Applicant: Hung-Chun Wang ,  Tzu-Chin Lin ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

Inventor： Hung-Chun Wang ,  Tzu-Chin Lin ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

IPC: G06F17/50

CPC classification number: G03F7/70425 ,  H01J37/3174

Abstract: The present disclosure involves a method of performing a maskless lithography process. The method includes receiving a computer layout file for an integrated circuit (IC) device. The layout file contains a plurality of IC sections. The method includes separating the computer layout file into a plurality of sub-files. The method includes striping the plurality of sub-files concurrently using a plurality of computer processors, thereby generating a plurality of striped sub-files. The method includes transferring the plurality of striped sub-files to a maskless lithography system.

Abstract translation: 本公开涉及执行无掩模光刻工艺的方法。 该方法包括接收用于集成电路（IC）设备的计算机布局文件。 布局文件包含多个IC部分。 该方法包括将计算机布局文件分离成多个子文件。 该方法包括使用多个计算机处理器并行地分割多个子文件，从而生成多个条带化子文件。 该方法包括将多个条带化子文件传送到无掩模光刻系统。

公开(公告)号：US08473877B2

公开(公告)日：2013-06-25

申请号：US13225617

申请日：2011-09-06

Applicant: Hung-Chun Wang ,  Tzu-Chin Lin ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

Inventor： Hung-Chun Wang ,  Tzu-Chin Lin ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

IPC: G06F17/50

CPC classification number: G03F7/70425 ,  H01J37/3174

Abstract: The present disclosure involves a method of performing a maskless lithography process. The method includes receiving a computer layout file for an integrated circuit (IC) device. The layout file contains a plurality of IC sections. The method includes separating the computer layout file into a plurality of sub-files. The method includes striping the plurality of sub-files concurrently using a plurality of computer processors, thereby generating a plurality of striped sub-files. The method includes transferring the plurality of striped sub-files to a maskless lithography system.

Abstract translation: 本公开涉及执行无掩模光刻工艺的方法。 该方法包括接收用于集成电路（IC）设备的计算机布局文件。 布局文件包含多个IC部分。 该方法包括将计算机布局文件分离成多个子文件。 该方法包括使用多个计算机处理器并行地分割多个子文件，从而生成多个条带化子文件。 该方法包括将多个条带化子文件传送到无掩模光刻系统。

公开(公告)号：US20120237877A1

公开(公告)日：2012-09-20

申请号：US13049123

申请日：2011-03-16

Applicant: Hung-Chun Wang ,  Pei-Shiang Chen ,  Tzu-Chin Lin ,  Faruk Krecinic ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

Inventor： Hung-Chun Wang ,  Pei-Shiang Chen ,  Tzu-Chin Lin ,  Faruk Krecinic ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

IPC: G03F7/20 ,  G06F17/50

CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/36 ,  G03F7/2037 ,  H01J37/3174 ,  H01J2237/063 ,  H01J2237/31762 ,  H01J2237/31764 ,  Y10S430/143

Abstract: The present disclosure provides for many different embodiments of a charged particle beam data storage system and method. In an example, a method includes dividing a design layout into a plurality of units; creating a lookup table that maps each of the plurality of units to its position within the design layout and a data set, wherein the lookup table associates any repeating units in the plurality of units to a same data set; and exposing an energy sensitive layer to a charged particle beam based on the lookup table.

Abstract translation: 本公开提供了带电粒子束数据存储系统和方法的许多不同实施例。 在一个示例中，一种方法包括将设计布局划分成多个单元; 创建将所述多个单元中的每一个映射到其在所述设计布局内的位置和数据集合的查找表，其中所述查找表将所述多个单元中的任何重复单元关联到相同的数据集; 并且基于查找表将能量敏感层暴露于带电粒子束。

公开(公告)号：US08507159B2

公开(公告)日：2013-08-13

申请号：US13049123

申请日：2011-03-16

Applicant: Hung-Chun Wang ,  Pei-Shiang Chen ,  Tzu-Chin Lin ,  Faruk Krecinic ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

Inventor： Hung-Chun Wang ,  Pei-Shiang Chen ,  Tzu-Chin Lin ,  Faruk Krecinic ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

IPC: G03F9/00

CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/36 ,  G03F7/2037 ,  H01J37/3174 ,  H01J2237/063 ,  H01J2237/31762 ,  H01J2237/31764 ,  Y10S430/143

Abstract: The present disclosure provides for many different embodiments of a charged particle beam data storage system and method. In an example, a method includes dividing a design layout into a plurality of units; creating a lookup table that maps each of the plurality of units to its position within the design layout and a data set, wherein the lookup table associates any repeating units in the plurality of units to a same data set; and exposing an energy sensitive layer to a charged particle beam based on the lookup table.

Abstract translation: 本公开提供了带电粒子束数据存储系统和方法的许多不同实施例。 在一个示例中，一种方法包括将设计布局划分成多个单元; 创建将所述多个单元中的每一个映射到其在所述设计布局内的位置和数据集合的查找表，其中所述查找表将所述多个单元中的任何重复单元关联到相同的数据集; 并且基于查找表将能量敏感层暴露于带电粒子束。

公开(公告)号：US20130055173A1

公开(公告)日：2013-02-28

申请号：US13217345

申请日：2011-08-25

Applicant: Hung-Chun Wang ,  Pei-Shiang Chen ,  Tzu-Chin Lin ,  Cheng-Hung Chen ,  Shih-Chi Wang ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

Inventor： Hung-Chun Wang ,  Pei-Shiang Chen ,  Tzu-Chin Lin ,  Cheng-Hung Chen ,  Shih-Chi Wang ,  Nian-Fuh Cheng ,  Jeng-Horng Chen ,  Wen-Chun Huang ,  Ru-Gun Liu

IPC: G06F17/50

CPC classification number: G03F7/2059

Abstract: The present disclosure involves a method of performing a maskless lithography process. The method includes providing a proximity correction pattern. The method includes generating a deformed pattern based on the proximity correction pattern. The method includes performing a first convolution process to the proximity correction pattern to generate a first proximity correction pattern contour. The method includes processing the first proximity correction pattern contour to generate a second proximity correction pattern contour. The method includes performing a second convolution process to the deformed pattern to generate a first deformed pattern contour. The method includes processing the first deformed pattern contour to generate a second deformed pattern contour. The method includes identifying mismatches between the second proximity correction pattern contour and the second deformed pattern contour. The method includes determining whether the deformed pattern is lithography-ready in response to the identifying.

Abstract translation: 本公开涉及执行无掩模光刻工艺的方法。 该方法包括提供接近校正模式。 该方法包括基于接近校正图案生成变形图案。 该方法包括对接近校正图案执行第一卷积处理以产生第一邻近校正图案轮廓。 该方法包括处理第一接近校正图案轮廓以产生第二邻近校正图案轮廓。 该方法包括对变形图案执行第二卷积处理以产生第一变形图案轮廓。 该方法包括处理第一变形图案轮廓以产生第二变形图案轮廓。 该方法包括识别第二接近校正图案轮廓和第二变形图案轮廓之间的不匹配。 该方法包括响应于识别确定变形图案是否是光刻刻画的。