公开(公告)号：US20070170552A1

公开(公告)日：2007-07-26

申请号：US11712077

申请日：2007-02-28

申请人： Lingyi Zheng ,  Er-Xuan Ping

发明人： Lingyi Zheng ,  Er-Xuan Ping

IPC分类号： H01L23/58

CPC分类号： H01L21/0217 ,  C23C16/0272 ,  C23C16/345 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31051 ,  H01L21/3115 ,  H01L21/3185 ,  H01L21/3211 ,  H01L29/94 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming silicon nitride films on semiconductor devices is provided. In one embodiment of the method, a silicon-comprising substrate is first exposed to a mixture of dichlorosilane (DCS) and a nitrogen-comprising gas to deposit a thin silicon nitride seeding layer on the surface, and then exposed to a mixture of silicon tetrachloride (TCS) and a nitrogen comprising gas to deposit a TCS silicon nitride layer on the DCS seeding layer. In another embodiment, the method involves first nitridizing the surface of the silicon-comprising substrate prior to forming the DCS nitride seeding layer and the TCS nitride layer. The method achieves a TCS nitride layer having a sufficient thickness to eliminate bubbling and punch-through problems and provide high electrical performance regardless of the substrate type. Also provided are methods of forming a capacitor, and the resulting capacitor structures.

摘要翻译： 提供了一种在半导体器件上形成氮化硅膜的方法。 在该方法的一个实施方案中，首先将含硅衬底暴露于二氯硅烷（DCS）和含氮气体的混合物以在表面上沉积薄氮化硅接种层，然后暴露于四氯化硅 （TCS）和包含气体的氮气以在DCS籽晶层上沉积TCS氮化硅层。 在另一个实施方案中，该方法包括在形成DCS氮化物接种层和TCS氮化物层之前首先氮化含硅衬底的表面。 该方法实现了具有足够厚度的TCS氮化物层，以消除起泡和穿通问题，并且不管衬底类型如何，都能提供高电性能。 还提供了形成电容器的方法以及所得到的电容器结构。

公开(公告)号：US20060205187A1

公开(公告)日：2006-09-14

申请号：US11430492

申请日：2006-05-09

申请人： Lingyi Zheng ,  Trung Doan ,  Lyle Breiner ,  Er-Xuan Ping ,  Kevin Beaman ,  Ronald Weimer ,  David Kubista ,  Cem Basceri

发明人： Lingyi Zheng ,  Trung Doan ,  Lyle Breiner ,  Er-Xuan Ping ,  Kevin Beaman ,  Ronald Weimer ,  David Kubista ,  Cem Basceri

IPC分类号： H01L21/20

CPC分类号： C23C16/45546 ,  C23C16/45578 ,  C23C16/4583

摘要： The present disclosure suggests several systems and methods for batch processing of microfeature workpieces, e.g., semiconductor wafers or the like. One exemplary implementation provides a method of depositing a reaction product on each of a batch of workpieces positioned in a process chamber in a spaced-apart relationship. A first gas may be delivered to an elongate first delivery conduit that includes a plurality of outlets spaced along a length of the conduit. A first gas flow may be directed by the outlets to flow into at least one of the process spaces between adjacent workpieces along a first vector that is transverse to the direction in which the workpieces are spaced. A second gas may be delivered to an elongate second delivery conduit that also has outlets spaced along its length. A second gas flow of the second gas may be directed by the outlets to flow into the process spaces along a second vector that is transverse to the first direction.

摘要翻译： 本公开提出了用于批量处理微特征工件（例如半导体晶片等）的几种系统和方法。 一个示例性实施方案提供了一种在间隔开的关系中将反应产物沉积在处理室中的一批工件的每一个上的方法。 第一气体可以被输送到细长的第一输送管道，该第一输送管道包括沿管道的长度间隔开的多个出口。 第一气流可以由出口引导，沿着横向于工件间隔开的方向的第一向量流入相邻工件之间的至少一个工艺空间。 第二气体可以被输送到细长的第二输送管道，该第二输送管道也具有沿其长度间隔开的出口。 第二气体的第二气流可以由出口引导，沿着横向于第一方向的第二向量流入处理空间。

公开(公告)号：US20060198955A1

公开(公告)日：2006-09-07

申请号：US11416866

申请日：2006-05-03

申请人： Lingyi Zheng ,  Trung Doan ,  Lyle Breiner ,  Er-Xuan Ping ,  Ronald Weimer ,  David Kubista ,  Kevin Beaman ,  Cem Basceri

发明人： Lingyi Zheng ,  Trung Doan ,  Lyle Breiner ,  Er-Xuan Ping ,  Ronald Weimer ,  David Kubista ,  Kevin Beaman ,  Cem Basceri

IPC分类号： C23C16/00

CPC分类号： C23C16/4583 ,  C23C16/45546 ,  C23C16/45578 ,  Y10S206/832

摘要： The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. One exemplary implementation provides a microfeature workpiece holder adapted to hold a plurality of microfeature workpieces. This workpiece holder includes a plurality of workpiece supports and a gas distributor. The workpiece supports are adapted to support a plurality of microfeature workpieces in a spaced-apart relationship to define a process space adjacent a surface of each microfeature workpiece. The gas distributor includes an inlet and a plurality of outlets, with each of the outlets positioned to direct a flow of process gas into one of the process spaces.

摘要翻译： 本公开描述了用于处理微特征工件的装置和方法，例如通过使用原子层沉积在微电子半导体上沉积材料。 这些设备中的一些包括微型工件保持器，其包括气体分配器。 一个示例性实施例提供了适于保持多个微特征工件的微特征工件保持器。 该工件保持器包括多个工件支撑件和气体分配器。 工件支撑件适于以间隔的关系支撑多个微特征工件以限定与每个微特征工件的表面相邻的工艺空间。 气体分配器包括入口和多个出口，其中每个出口被定位成将处理气体流引导到处理空间中的一个中。

公开(公告)号：US20050081786A1

公开(公告)日：2005-04-21

申请号：US10687458

申请日：2003-10-15

申请人： David Kubista ,  Trung Doan ,  Lyle Breiner ,  Ronald Weimer ,  Kevin Beaman ,  Er-Xuan Ping ,  Lingyi Zheng ,  Cem Basceri

发明人： David Kubista ,  Trung Doan ,  Lyle Breiner ,  Ronald Weimer ,  Kevin Beaman ,  Er-Xuan Ping ,  Lingyi Zheng ,  Cem Basceri

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/4412 ,  Y10T137/0396

摘要： Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers are disclosed herein. In one embodiment, the system includes a gas phase reaction chamber, a first exhaust line coupled to the reaction chamber, first and second traps each in fluid communication with the first exhaust line, and a vacuum pump coupled to the first exhaust line to remove gases from the reaction chamber. The first and second traps are operable independently to individually and/or jointly collect byproducts from the reaction chamber. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

摘要翻译： 用于在反应室中将材料沉积到工件上的系统以及用于从反应室除去副产物的方法在此公开。 在一个实施例中，系统包括气相反应室，连接到反应室的第一排气管线，与第一排气管线流体连通的第一和第二阱，以及耦合到第一排气管线以除去气体的真空泵 从反应室。 第一和第二捕集器独立地可操作地单独地和/或共同地从反应室收集副产物。 要强调的是提供本摘要以符合要求摘要的规则。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

公开(公告)号：US20060213440A1

公开(公告)日：2006-09-28

申请号：US11430328

申请日：2006-05-09

申请人： Lingyi Zheng ,  Trung Doan ,  Lyle Breiner ,  Er-Xuan Ping ,  Kevin Beaman ,  Ronald Weimer ,  David Kubista ,  Cem Basceri

发明人： Lingyi Zheng ,  Trung Doan ,  Lyle Breiner ,  Er-Xuan Ping ,  Kevin Beaman ,  Ronald Weimer ,  David Kubista ,  Cem Basceri

IPC分类号： C23C16/00

CPC分类号： C23C16/45546 ,  C23C16/45578 ,  C23C16/4583

摘要： The present disclosure suggests several systems and methods for batch processing of microfeature workpieces, e.g., semiconductor wafers or the like. One exemplary implementation provides a method of depositing a reaction product on each of a batch of workpieces positioned in a process chamber in a spaced-apart relationship. A first gas may be delivered to an elongate first delivery conduit that includes a plurality of outlets spaced along a length of the conduit. A first gas flow may be directed by the outlets to flow into at least one of the process spaces between adjacent workpieces along a first vector that is transverse to the direction in which the workpieces are spaced. A second gas may be delivered to an elongate second delivery conduit that also has outlets spaced along its length. A second gas flow of the second gas may be directed by the outlets to flow into the process spaces along a second vector that is transverse to the first direction.

公开(公告)号：US20060204649A1

公开(公告)日：2006-09-14

申请号：US11418337

申请日：2006-05-04

申请人： Kevin Beaman ,  Trung Doan ,  Lyle Breiner ,  Ronald Weimer ,  Er-Xuan Ping ,  David Kubista ,  Cem Basceri ,  Lingyi Zheng

发明人： Kevin Beaman ,  Trung Doan ,  Lyle Breiner ,  Ronald Weimer ,  Er-Xuan Ping ,  David Kubista ,  Cem Basceri ,  Lingyi Zheng

IPC分类号： C23C16/00 ,  C23C16/52

CPC分类号： C23C16/00 ,  C23C16/46

摘要： The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method that involves monitoring a first temperature outside the deposition chamber and a second temperature inside the deposition chamber. An internal temperature in the deposition chamber can be increased in accordance with a ramp profile by (a) comparing a control temperature to a target temperature, and (b) selectively delivering heat to the deposition chamber in response to a result of the comparison. The target temperature may be determined in accordance with the ramp profile, but the control temperature in one implementation alternates between the first temperature and the second temperature.

摘要翻译： 本公开提供了用于控制温度的方法和系统。 该方法在沉积工艺中控制温度，例如通过CVD沉积热反射材料方面具有特别的用途。 一个示例性实施例提供了一种方法，其涉及监测沉积室外的第一温度和沉积室内的第二温度。 通过（a）将控制温度与目标温度进行比较，可以根据斜坡分布来增加沉积室中的内部温度，以及（b）响应于比较的结果，选择性地将热量输送到沉积室。 目标温度可以根据斜坡分布来确定，但是一个实现中的控制温度在第一温度和第二温度之间交替。

公开(公告)号：US20050045102A1

公开(公告)日：2005-03-03

申请号：US10652461

申请日：2003-08-28

申请人： Lingyi Zheng ,  Trung Doan ,  Lyle Breiner ,  Er-Xuan Ping ,  Kevin Beaman ,  Ronald Weimer ,  David Kubista ,  Cem Basceri

发明人： Lingyi Zheng ,  Trung Doan ,  Lyle Breiner ,  Er-Xuan Ping ,  Kevin Beaman ,  Ronald Weimer ,  David Kubista ,  Cem Basceri

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/00

CPC分类号： C23C16/45546 ,  C23C16/45578 ,  C23C16/4583

摘要： The present disclosure suggests several systems and methods for batch processing of microfeature workpieces, e.g., semiconductor wafers or the like. One exemplary implementation provides a method of depositing a reaction product on each of a batch of workpieces positioned in a process chamber in a spaced-apart relationship. A first gas may be delivered to an elongate first delivery conduit that includes a plurality of outlets spaced along a length of the conduit. A first gas flow may be directed by the outlets to flow into at least one of the process spaces between adjacent workpieces along a first vector that is transverse to the direction in which the workpieces are spaced. A second gas may be delivered to an elongate second delivery conduit that also has outlets spaced along its length. A second gas flow of the second gas may be directed by the outlets to flow into the process spaces along a second vector that is transverse to the first direction.

摘要翻译： 本公开提出了用于批量处理微特征工件（例如半导体晶片等）的几种系统和方法。 一个示例性实施方案提供了一种在间隔开的关系中将反应产物沉积在处理室中的一批工件的每一个上的方法。 第一气体可以被输送到细长的第一输送管道，该第一输送管道包括沿管道的长度间隔开的多个出口。 第一气流可以由出口引导，沿着横向于工件间隔开的方向的第一向量流入相邻工件之间的至少一个工艺空间。 第二气体可以被输送到细长的第二输送管道，该第二输送管道也具有沿其长度间隔开的出口。 第二气体的第二气流可以由出口引导，沿着横向于第一方向的第二向量流入处理空间。

公开(公告)号：US20050039680A1

公开(公告)日：2005-02-24

申请号：US10646673

申请日：2003-08-21

申请人： Kevin Beaman ,  Ronald Weimer ,  Lyle Breiner ,  Er-Xuan Ping ,  Trung Doan ,  Cem Basceri ,  David Kubista ,  Lingyi Zheng

发明人： Kevin Beaman ,  Ronald Weimer ,  Lyle Breiner ,  Er-Xuan Ping ,  Trung Doan ,  Cem Basceri ,  David Kubista ,  Lingyi Zheng

IPC分类号： C23C16/00 ,  C23C16/44 ,  C23C16/455

CPC分类号： C23C16/45546 ,  C23C16/4404

摘要： The present disclosure provides methods and apparatus that may be used to process microfeature workpieces, e.g., semiconductor wafers. Some aspects have particular utility in depositing TiN in a batch process. One implementation involves pretreating a surface of a process chamber by contemporaneously introducing first and second pretreatment precursors (e.g., TiCl4 and NH3) to deposit a pretreatment material on a the chamber surface. After the pretreatment, the first microfeature workpiece may be placed in the chamber and TiN may be deposited on the microfeature workpiece by alternately introducing quantities of first and second deposition precursors.

摘要翻译： 本公开提供了可用于处理微特征工件（例如半导体晶片）的方法和装置。 一些方面在分批过程中沉积TiN具有特殊的用途。 一个实施方案包括通过同时引入第一和第二预处理前体（例如，TiCl 4和NH 3）在处理室表面上预沉积预处理材料来处理处理室的表面。 在预处理之后，可以将第一微特征工件放置在腔室中，并且可以通过交替地引入量的第一和第二沉积前体将TiN沉积在微特征工件上。

公开(公告)号：US20060115957A1

公开(公告)日：2006-06-01

申请号：US11327794

申请日：2006-01-06

申请人： Cem Basceri ,  Trung Doan ,  Ronald Weimer ,  Kevin Beaman ,  Lyle Breiner ,  Lingyi Zheng ,  Er-Xuan Ping ,  Demetrius Sarigiannis ,  David Kubista

发明人： Cem Basceri ,  Trung Doan ,  Ronald Weimer ,  Kevin Beaman ,  Lyle Breiner ,  Lingyi Zheng ,  Er-Xuan Ping ,  Demetrius Sarigiannis ,  David Kubista

IPC分类号： H01L21/76 ,  H01L21/20 ,  H01L21/302

CPC分类号： C23C16/45527 ,  C23C16/34 ,  C23C16/45546

摘要： The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure. The pressure within the enclosure is reduced to a second enclosure pressure while introducing a purge gas at a first flow rate. The second enclosure pressure may approach or be equal to a steady-state base pressure of the processing system at the first flow rate. After reducing the pressure, the purge gas flow may be increased to a second flow rate and the enclosure pressure may be increased to a third enclosure pressure. Thereafter, a flow of a second precursor gas may be introduced with a pressure within the enclosure at a fourth enclosure pressure; the third enclosure pressure is desirably within about 10 percent of the fourth enclosure pressure.

摘要翻译： 本公开提供了用于在批次的微特征工件上沉积材料中有用的方法和装置。 一个实施方案提供了一种方法，其中一定量的第一前体气体以第一封壳压力被引入外壳。 当以第一流速引入吹扫气体时，外壳内的压力降低到第二封闭压力。 第二外壳压力可接近或等于处理系统在第一流量下的稳态基础压力。 在降低压力之后，吹扫气体流量可以增加到第二流量，并且外壳压力可以增加到第三外壳压力。 此后，第二前体气体的流动可以在第四封闭压力下以外壳内的压力引入; 第三外壳压力理想地在第四外壳压力的约10％内。

公开(公告)号：US20060057800A1

公开(公告)日：2006-03-16

申请号：US11206340

申请日：2005-08-17

申请人： Trung Doan ,  Lyle Breiner ,  Er-Xuan Ping ,  Lingyi Zheng

发明人： Trung Doan ,  Lyle Breiner ,  Er-Xuan Ping ,  Lingyi Zheng

IPC分类号： H01L21/8238

CPC分类号： H01L21/0228 ,  C23C16/0236 ,  C23C16/0245 ,  C23C16/45546 ,  C23C16/54 ,  C30B25/02 ,  H01L21/02046 ,  H01L21/0214 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02326 ,  H01L21/28562 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31683 ,  H01L21/3185 ,  H01L21/76841 ,  H01L21/76856 ,  H01L21/76888

摘要： The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H, F and Cl to remove native oxide. After removing the native oxide, the substrates are simultaneously exposed to a first reactive material to form a first mass across at least some exposed surfaces of the substrates. The first reactive material is removed from the reaction chamber, and subsequently the substrates are exposed to a second reactive material to convert the first mass to a second mass. The invention also includes apparatuses which can be utilized for simultaneous ALD treatment of a plurality of discrete semiconductor substrates.