公开(公告)号：US07405417B2

公开(公告)日：2008-07-29

申请号：US11311624

申请日：2005-12-20

申请人： Lucas Henricus Johannes Stevens ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn

发明人： Lucas Henricus Johannes Stevens ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn

IPC分类号： G01J3/10 ,  G01N21/88 ,  G03B27/72

CPC分类号： G01N21/9501 ,  G01N21/94 ,  G03F7/70916

摘要： A lithographic apparatus is disclosed. The apparatus includes a projection system configured to project a first radiation beam onto a target portion of a substrate, and at least one monitoring device for detecting contamination in a interior space. The monitoring device includes at least one dummy element having at least one contamination receiving surface. In an aspect of the invention, there is provided at least one dummy element which does not take part in transferring a radiation beam onto a target portion of a substrate, wherein it is monitored whether a contamination receiving surface of the dummy element has been contaminated.

摘要翻译： 公开了一种光刻设备。 该装置包括被配置为将第一辐射束投射到基板的目标部分上的投影系统，以及用于检测内部空间中的污染的至少一个监视装置。 监测装置包括至少一个具有至少一个污染物接收表面的虚拟元件。 在本发明的一个方面中，提供了至少一个虚拟元件，其不参与将辐射束传送到基板的目标部分上，其中监视虚设元件的污染物接收表面是否已被污染。

公开(公告)号：US07928412B2

公开(公告)日：2011-04-19

申请号：US12405831

申请日：2009-03-17

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Bastiaan Theodoor Wolschrijn ,  Yurii Victorovitch Sidelnikov ,  Marc Hubertus Lorenz Van der Velden ,  Wouter Anthon Soer ,  Thomas Stein ,  Kurt Gielissen

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Bastiaan Theodoor Wolschrijn ,  Yurii Victorovitch Sidelnikov ,  Marc Hubertus Lorenz Van der Velden ,  Wouter Anthon Soer ,  Thomas Stein ,  Kurt Gielissen

IPC分类号： G21K5/00

CPC分类号： G03F7/70925 ,  G03F7/7085 ,  G03F7/70908 ,  G03F7/70916

摘要： A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

摘要翻译： 公开了一种被配置为将图案化的辐射束投影到基板的目标部分上的光刻设备。 该装置包括第一辐射剂量检测器和第二辐射剂量检测器，每个检测器包括被配置为接收辐射通量并由于接收到辐射通量而发射二次电子的二次电子发射表面，位于上游的第一辐射剂量检测器 相对于相对于辐射传播方向观察的第二辐射剂量检测器，以及连接到每个检测器的仪表，以检测由相应的电子发射表面产生的二次电子发射产生的电流或电压。

公开(公告)号：US07629594B2

公开(公告)日：2009-12-08

申请号：US11544930

申请日：2006-10-10

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Bastiaan Theodoor Wolschrijn ,  Yurii Victorovitch Sidelnikov ,  Marc Hubertus Lorenz Van Der Velden ,  Wouter Anthon Soer ,  Thomas Stein ,  Kurt Gielissen

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Bastiaan Theodoor Wolschrijn ,  Yurii Victorovitch Sidelnikov ,  Marc Hubertus Lorenz Van Der Velden ,  Wouter Anthon Soer ,  Thomas Stein ,  Kurt Gielissen

IPC分类号： G21K5/00

CPC分类号： G03F7/70925 ,  G03F7/7085 ,  G03F7/70908 ,  G03F7/70916

摘要： A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

摘要翻译： 公开了一种被配置为将图案化的辐射束投影到基板的目标部分上的光刻设备。 该装置包括第一辐射剂量检测器和第二辐射剂量检测器，每个检测器包括被配置为接收辐射通量并由于接收到辐射通量而发射二次电子的二次电子发射表面，位于上游的第一辐射剂量检测器 相对于相对于辐射传播方向观察的第二辐射剂量检测器，以及连接到每个检测器的仪表，以检测由相应的电子发射表面产生的二次电子发射产生的电流或电压。

公开(公告)号：US20080083885A1

公开(公告)日：2008-04-10

申请号：US11544930

申请日：2006-10-10

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Bastiaan Theodoor Wolschrijn ,  Yurii Victorovitch Sidelnikov ,  Marc Hubertus Lorenz Van Der Velden ,  Wouter Anton Soer ,  Thomas Stein ,  Kurt Gielissen

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Bastiaan Theodoor Wolschrijn ,  Yurii Victorovitch Sidelnikov ,  Marc Hubertus Lorenz Van Der Velden ,  Wouter Anton Soer ,  Thomas Stein ,  Kurt Gielissen

IPC分类号： G21K5/00 ,  G21G4/00

CPC分类号： G03F7/70925 ,  G03F7/7085 ,  G03F7/70908 ,  G03F7/70916

摘要： A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

摘要翻译： 公开了一种被配置为将图案化的辐射束投影到基板的目标部分上的光刻设备。 该装置包括第一辐射剂量检测器和第二辐射剂量检测器，每个检测器包括被配置为接收辐射通量并由于接收到辐射通量而发射二次电子的二次电子发射表面，位于上游的第一辐射剂量检测器 相对于相对于辐射传播方向观察的第二辐射剂量检测器，以及连接到每个检测器的仪表，以检测由相应的电子发射表面产生的二次电子发射产生的电流或电压。

公开(公告)号：US20090072168A1

公开(公告)日：2009-03-19

申请号：US12289884

申请日：2008-11-06

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch IVANOV ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch IVANOV ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： G01J3/10

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以配置在设备内的特定位置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。

公开(公告)号：US07491951B2

公开(公告)日：2009-02-17

申请号：US11319193

申请日：2005-12-28

申请人： Marc Hubertus Lorenz Van Der Velden ,  Vadim Yevgenyevich Banine ,  Bastiaan Matthias Mertens ,  Johannes Hubertus Josephina Moors ,  Markus Weiss ,  Bastiaan Theodoor Wolschrijn ,  Michiel D. Nijkerk

发明人： Marc Hubertus Lorenz Van Der Velden ,  Vadim Yevgenyevich Banine ,  Bastiaan Matthias Mertens ,  Johannes Hubertus Josephina Moors ,  Markus Weiss ,  Bastiaan Theodoor Wolschrijn ,  Michiel D. Nijkerk

IPC分类号： G03B27/52 ,  G03F7/20

CPC分类号： G03F7/70933 ,  G03F7/70916 ,  G03F7/7095

摘要： The invention relates to a lithographic apparatus that includes a system configured to condition a radiation beam or project a patterned radiation beam onto a target portion of a substrate. The system includes an optically active device configured to direct the radiation beam or the patterned radiation beam, respectively, and a support structure configured to support the optically active device. The apparatus further includes a gas supply for providing a background gas into the system. The radiation beam or patterned radiation beam react with the background gas to form a plasma that includes a plurality of ions. The support structure includes an element that includes a material that has a low sputtering yield, a high sputter threshold energy, or a high ion implantation yield, to reduce sputtering and the creation of sputtering products.

摘要翻译： 本发明涉及一种光刻设备，其包括被配置为调节辐射束或将图案化的辐射束投影到基板的目标部分上的系统。 该系统包括被配置为分别引导辐射束或图案化辐射束的光学有源器件，以及被配置为支持光学有源器件的支撑结构。 该装置还包括用于将背景气体提供到系统中的气体供应。 辐射束或图案化的辐射束与背景气体反应以形成包括多个离子的等离子体。 支撑结构包括包括具有低溅射产率，高溅射阈值能量或高离子注入产量的材料的元件，以减少溅射和溅射产物的产生。

公开(公告)号：US07935218B2

公开(公告)日：2011-05-03

申请号：US11643955

申请日：2006-12-22

申请人： Johannes Hubertus Josephina Moors ,  Vadim Yevgenyevich Banine ,  Bastiaan Theodoor Wolschrijn ,  Carolus Ida Maria Antonius Spee ,  Rik Jansen

发明人： Johannes Hubertus Josephina Moors ,  Vadim Yevgenyevich Banine ,  Bastiaan Theodoor Wolschrijn ,  Carolus Ida Maria Antonius Spee ,  Rik Jansen

IPC分类号： C23F1/00

CPC分类号： G03F7/2043 ,  G03F7/70041 ,  G03F7/70925

摘要： An optical apparatus includes an illumination system configured to form a pulsed radiation beam, an optical element with a surface on which the radiation beam is incident in operation, and a gas source arranged to supply a mixture of a first type of gas and a second type of gas to a space adjacent the surface. Particles of the first and second types of gas are capable of reacting with the surface, when activated by the radiation beam. The gas source is configured to generate a combination of surface occupation numbers of molecules of the first and second types of gas on the surface under operating conditions, at least prior to pulses of the radiation beam, the combination of surface occupation numbers lying in a range in which reactions of particles with the surface during pulses of the radiation beam are in majority reversed.

摘要翻译： 光学装置包括被配置为形成脉冲辐射束的照明系统，具有辐射束在其中入射的表面的光学元件，以及设置成供应第一类型气体和第二类型的混合物的气体源 的气体到邻近表面的空间。 当由辐射束激活时，第一和第二类气体的颗粒能够与表面反应。 气源被配置成至少在辐射束的脉冲之前，在工作条件下，在表面上产生第一和第二类气体的分子的表面占有数量的组合，表面占有数的组合在一个范围内 其中在辐射束的脉冲期间颗粒与表面的反应多数反转。

公开(公告)号：US07812330B2

公开(公告)日：2010-10-12

申请号：US12289884

申请日：2008-11-06

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： H05G2/00

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以配置在设备内的特定位置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。

公开(公告)号：US07462850B2

公开(公告)日：2008-12-09

申请号：US11296702

申请日：2005-12-08

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： H05G2/00

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以在设备内的特定位置进行配置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。

公开(公告)号：US07279690B2

公开(公告)日：2007-10-09

申请号：US11094490

申请日：2005-03-31

申请人： Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Bastiaan Matthias Mertens ,  Johannes Hubertus Josephina Moors ,  Frank Jeroen Pieter Schuurmans ,  Givi Georgievitch Zukavishvili ,  Bastiaan Theodoor Wolschrijn ,  Marc Hubertus Lorenz Van Der Velden

发明人： Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Bastiaan Matthias Mertens ,  Johannes Hubertus Josephina Moors ,  Frank Jeroen Pieter Schuurmans ,  Givi Georgievitch Zukavishvili ,  Bastiaan Theodoor Wolschrijn ,  Marc Hubertus Lorenz Van Der Velden

IPC分类号： H05H3/00

CPC分类号： G03F7/70933 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70916

摘要： A lithographic apparatus is arranged to project a beam from a radiation source onto a substrate. The apparatus includes an optical element in a path of the beam, a gas inlet for introducing a gas into the path of the beam so that the gas will be ionized by the beam to create electric fields toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold of kinetic energy for sputtering the optical element that is greater than the kinetic energy developed by ions of the gas in the electric fields.

摘要翻译： 光刻设备被布置成将来自辐射源的光束投影到基底上。 该装置包括在光束的路径中的光学元件，用于将气体引入光束的路径中的气体入口，使得气体将被光束离子化以产生朝向光学元件的电场，并且气体源耦合 到用于供应气体的气体入口。 气体具有用于溅射光学元件的动能阈值，其大于由电场中的气体的离子产生的动能。