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    Optical semiconductor device
    2.
    发明授权
    Optical semiconductor device 有权

    公开(公告)号：US12027822B2

    公开(公告)日：2024-07-02

    申请号：US17304526

    申请日：2021-06-22

    申请人： Lumentum Japan, Inc.

    发明人： Atsushi Nakamura ,  Hayato Takita ,  Shigetaka Hamada ,  Ryosuke Nakajima ,  Masatoshi Arasawa ,  Ryu Washino

    IPC分类号： H01S5/22 ,  H01S5/026 ,  H01S5/12 ,  H01S5/227 ,  H01S5/34

    CPC分类号： H01S5/2218 ,  H01S5/0265 ,  H01S5/12 ,  H01S5/2206 ,  H01S5/227 ,  H01S5/34

    摘要： To provide an optical semiconductor device having excellent long-term reliability, the optical semiconductor device includes: a substrate; a mesa structure provided on the substrate; a semiconductor burial layer provided in contact with two sides of the mesa structure; and an electrode containing Au, which is provided above the semiconductor burial layer. The mesa structure includes a first conductivity type semiconductor layer, a multiple-quantum well layer, and a second conductivity type semiconductor layer, which are stacked in the stated order from a substrate side. The semiconductor burial layer includes a first semi-insulating InP layer provided in contact with side portions of the mesa structure, a first anti-diffusion layer provided in contact with the first semi-insulating InP layer, and a second semi-insulating InP layer provided on the first anti-diffusion layer. The first anti-diffusion layer has an Au diffusion constant that is smaller than that of the first semi-insulating InP layer.

    Semiconductor optical amplifier integrated laser
    3.
    发明授权
    Semiconductor optical amplifier integrated laser 有权

    公开(公告)号：US11552448B2

    公开(公告)日：2023-01-10

    申请号：US16901872

    申请日：2020-06-15

    申请人： Lumentum Japan, Inc.

    发明人： Atsushi Nakamura ,  Kaoru Okamoto ,  Masatoshi Arasawa ,  Tetsuya Nishida ,  Yasushi Sakuma ,  Shigetaka Hamada ,  Ryosuke Nakajima

    IPC分类号： H01S5/026 ,  H01S5/50 ,  H01S5/32 ,  H01S5/227 ,  H01S5/12 ,  H01S5/10 ,  H01S5/028

    摘要： A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.