摘要:
A lithographic projection apparatus includes a measurement system for measuring changes in projection system aberrations with time, and a predictive control system for predicting variation of projection system aberrations with time on the basis of model parameters and for generating a control signal for compensating a time-varying property of the apparatus, such as the OVL values (X-Y adjustment) and the FOC values (Z adjustment) of a lens of the projection system for example. An inline model identification system is provided for estimating model parameter errors on the basis of projection system aberration values provided by the predictive control system and measured projection system aberration values provided by the measurement system, and an updating system utilizes the model parameter errors for updating the model parameters of the predictive control system in order to maintain the time-varying property within acceptable performance criteria.
摘要:
A manufacturing method is utilized in lithographic projection apparatus in order to enable all aberrations to be compensated for but with those aberrations that are of most significance to the particular application (the particular pattern, illumination mode, etc.) being given precedence over aberrations that are of lesser significance in relation to that particular application. The method uses a substrate having a target portion for receiving an image, a mask for applying a pattern in accordance with a required patterning application, and a projection system to project a selected beam of radiation onto the mask to produce a specific required patterned beam providing an image of the pattern on the target portion. In order to compensate for the aberrations in a manner that gives precedence to those aberrations of particular significance to the required application, the method incorporates the steps of predicting projection system aberration changes with time, determining the application-specific effect on certain parameters of the image of such predicted projection system aberration changes with respect to certain measured aberration values, generating a control signal specific to the required patterned beam according to such predicted projection system aberration changes in the projection system aberrations with time and their application-specific effect on certain parameters of the image; and carrying out imaging adjustments in dependence on the control signal to compensate for the application-specific effect of the predicted changes in the aberrations on the image. The adjustments are therefore determined optimally for the given application.
摘要:
A lithographic projection apparatus includes a measurement system for measuring changes in projection system aberrations with time, and a predictive control system for predicting variation of projection system aberrations with time on the basis of model parameters and for generating a control signal for compensating a time-varying property of the apparatus, such as the OVL values (X-Y adjustment) and the FOC values (Z adjustment) of a lens of the projection system for example. An inline model identification system is provided for estimating model parameter errors on the basis of projection system aberration values provided by the predictive control system and measured projection system aberration values provided by the measurement system, and an updating system utilizes the model parameter errors for updating the model parameters of the predictive control system in order to maintain the time-varying property within acceptable performance criteria.
摘要:
A lithographic projection apparatus is disclosed that includes a predictive system configured to predict changes in projection system aberrations with time with respect to measured aberration values, a modelling system configured to determine an application-specific effect of said predicted projection system aberration changes on at least one parameter of an image for a selected pattern, a control system configured to generate a control signal specific to the selected pattern according to said predicted projection system aberration changes and their application-specific effect on the at least one parameter of the image, and an image adjusting system, responsive to the control signal, to compensate for the application-specific effect of said predicted projection system aberration changes on the image.
摘要:
A lithographic projection apparatus is disclosed that includes a predictive system configured to predict changes in projection system aberrations with time with respect to measured aberration values, a modelling system configured to determine an application-specific effect of said predicted projection system aberration changes on at least one parameter of an image for a selected pattern, a control system configured to generate a control signal specific to the selected pattern according to said predicted projection system aberration changes and their application-specific effect on the at least one parameter of the image, and an image adjusting system, responsive to the control signal, to compensate for the application-specific effect of said predicted projection system aberration changes on the image. Adjustments may therefore be determined optimally for a given application.
摘要:
A lithographic projection apparatus is disclosed that includes a predictive system configured to predict changes in projection system aberrations with time with respect to measured aberration values, a modelling system configured to determine an application-specific effect of said predicted projection system aberration changes on at least one parameter of an image for a selected pattern, a control system configured to generate a control signal specific to the selected pattern according to said predicted projection system aberration changes and their application-specific effect on the at least one parameter of the image, and an image adjusting system, responsive to the control signal, to compensate for the application-specific effect of said predicted projection system aberration changes on the image.
摘要:
A multiple-die mask pattern is arranged with dies having the same pattern in mutually opposite orientations. The method for arranging the dies includes analyzing the pattern of a single die to identify a pattern characteristic property which is non uniformly distributed over the area of the die. If the distribution is found to be asymmetric, a line separating the die area into two half-die areas is defined with respect to which the asymmetry is apparent. Half-die areas of different dies with the same pattern characteristic property are grouped together in the mask pattern. The resulting enhanced symmetry of the distribution of the pattern characteristic property over the mask area increases lithographic processability and thereby improves die yield.
摘要:
A multiple-die mask pattern is arranged with dies having the same pattern in mutually opposite orientations. The method for arranging the dies includes analyzing the pattern of a single die to identify a pattern characteristic property which is non uniformly distributed over the area of the die. If the distribution is found to be asymmetric, a line separating the die area into two half-die areas is defined with respect to which the asymmetry is apparent. Half-die areas of different dies with the same pattern characteristic property are grouped together in the mask pattern. The resulting enhanced symmetry of the distribution of the pattern characteristic property over the mask area increases lithographic processability and thereby improves die yield.