Nanowire device with (111) vertical sidewalls and method of fabrication
    1.
    发明授权
    Nanowire device with (111) vertical sidewalls and method of fabrication 失效
    具有(111)垂直侧壁的纳米线器件和制造方法

    公开(公告)号:US07692179B2

    公开(公告)日:2010-04-06

    申请号:US10888628

    申请日:2004-07-09

    IPC分类号: H01L29/06

    摘要: A nano-scale device and method of fabrication provide a nanowire having (111) vertical sidewalls. The nano-scale device includes a semiconductor-on-insulator substrate polished in a [110] direction, the nanowire, and an electrical contact at opposite ends of the nanowire. The method includes wet etching a semiconductor layer of the semiconductor-on-insulator substrate to form the nanowire extending between a pair of islands in the semiconductor layer. The method further includes depositing an electrically conductive material on the pair of islands to form the electrical contacts. A nano-pn diode includes the nanowire as a first nano-electrode, a pn-junction vertically stacked on the nanowire, and a second nano-electrode on a (110) horizontal planar end of the pn-junction. The nano-pn diode may be fabricated in an array of the diodes on the semiconductor-on-insulator substrate.

    摘要翻译: 纳米级器件和制造方法提供具有(111)垂直侧壁的纳米线。 纳米级器件包括在[110]方向上抛光的绝缘体上半导体衬底,纳米线和在纳米线的相对端的电接触。 该方法包括湿式蚀刻绝缘体上半导体衬底的半导体层,以形成在半导体层中的一对岛之间延伸的纳米线。 该方法还包括在一对岛上沉积导电材料以形成电触头。 纳米pn二极管包括纳米线作为第一纳米电极,垂直堆叠在纳米线上的pn结,以及在pn结的(110)水平平面端上的第二纳米电极。 可以在绝缘体上半导体衬底上的二极管的阵列中制造纳米pn二极管。

    Monolithic system and method for enhanced Raman spectroscopy
    3.
    发明授权
    Monolithic system and method for enhanced Raman spectroscopy 有权
    用于增强拉曼光谱的单片系统和方法

    公开(公告)号:US07151599B2

    公开(公告)日:2006-12-19

    申请号:US11044421

    申请日:2005-01-27

    IPC分类号: G01J3/44 G01N21/65

    CPC分类号: G01N21/658 G01N2201/0873

    摘要: Devices, systems, and methods for enhancing Raman spectroscopy and hyper-Raman are disclosed. A molecular analysis device for performing Raman spectroscopy comprises a substrate and a laser source disposed on the substrate. The laser source may be configured for emanating a laser radiation, which may irradiate an analyte disposed on a Raman enhancement structure. The Raman enhancement structure may be disposed in a waveguide. The molecular analysis device also includes a wavelength demultiplexer and radiation sensors disposed on the substrate and configured for receiving a Raman scattered radiation, which may be generated by the irradiation of the analyte and Raman enhancement structure.

    摘要翻译: 公开了用于增强拉曼光谱和超拉曼的装置,系统和方法。 用于执行拉曼光谱的分子分析装置包括设置在基板上的基板和激光源。 激光源可以被配置为发射激光辐射,其可照射设置在拉曼增强结构上的分析物。 拉曼增强结构可以设置在波导中。 该分子分析装置还包括布置在基板上的波长解复用器和辐射传感器,并且被配置为用于接收可以通过分析物的照射和拉曼增强结构产生的拉曼散射辐射。

    Dynamically variable separation among nanoparticles for nano-enhanced Raman spectroscopy (NERS) molecular sensing
    4.
    发明授权
    Dynamically variable separation among nanoparticles for nano-enhanced Raman spectroscopy (NERS) molecular sensing 有权
    用于纳米增强拉曼光谱(NERS)分子感测的纳米颗粒之间的动态变化分离

    公开(公告)号:US07342656B2

    公开(公告)日:2008-03-11

    申请号:US11252134

    申请日:2005-10-17

    IPC分类号: G01J3/44 G01N21/65

    CPC分类号: G01N21/658

    摘要: A NERS-active structure includes a deformable, active nanoparticle support structure for supporting a first nanoparticle and a second nanoparticle that is disposed proximate the first nanoparticle. The nanoparticles each comprise a NERS-active material. The deformable, active nanoparticle support structure is configured to vary the distance between the first nanoparticle and the second nanoparticle while performing NERS. Various active nanoparticle support structures are disclosed. A NERS system includes such a NERS-active structure, a radiation source for generating radiation scatterable by an analyte located proximate the NERS-active structure, and a radiation detector for detecting Raman scattered radiation scattered by the analyte. A method for performing NERS includes providing such a NERS-active structure, providing an analyte at a location proximate the NERS-active structure, irradiating the NERS-active structure and the analyte with radiation, varying the distance between the nanoparticles, and detecting Raman scattered radiation scattered by the analyte.

    摘要翻译: NERS活性结构包括用于支撑第一纳米颗粒的可变形的活性纳米颗粒支撑结构和邻近第一纳米颗粒设置的第二纳米颗粒。 纳米颗粒各自包含NERS-活性材料。 可变形的活性纳米颗粒支撑结构被配置为在执行NERS的同时改变第一纳米颗粒和第二纳米颗粒之间的距离。 公开了各种活性纳米颗粒载体结构。 NERS系统包括这样的NERS-活性结构,用于产生由位于NERS-活性结构附近的分析物可散射的辐射的辐射源,以及用于检测被分析物散射的拉曼散射辐射的辐射检测器。 执行NERS的方法包括提供这样的NERS活性结构,在靠近NERS-活性结构的位置提供分析物,用辐射照射NERS-活性结构和分析物,改变纳米颗粒之间的距离并检测拉曼散射 被分析物散射的辐射。

    Integrated modular system and method for enhanced Raman spectroscopy
    5.
    发明授权
    Integrated modular system and method for enhanced Raman spectroscopy 有权
    用于增强拉曼光谱的集成模块化系统和方法

    公开(公告)号:US07385691B2

    公开(公告)日:2008-06-10

    申请号:US11044676

    申请日:2005-01-27

    IPC分类号: G01J3/44 G01N21/65

    摘要: Devices, systems, and methods for enhancing Raman spectroscopy and hyper-Raman are disclosed. A molecular analysis device for performing Raman spectroscopy comprises a substrate and a laser source disposed on the substrate. The laser source may be configured for emanating a laser radiation, which may irradiate an analyte disposed on a Raman enhancement structure. The Raman enhancement structure may be disposed on the substrate or apart from the substrate. The molecular analysis device also include a radiation receiver disposed on the substrate and configured for receiving a Raman scattered radiation, which may be generated by the irradiation of the analyte and Raman enhancement structure.

    摘要翻译: 公开了用于增强拉曼光谱和超拉曼的装置,系统和方法。 用于执行拉曼光谱的分子分析装置包括设置在基板上的基板和激光源。 激光源可以被配置为发射激光辐射,其可照射设置在拉曼增强结构上的分析物。 拉曼增强结构可以设置在基板上或者离开基板。 分子分析装置还包括设置在基板上并被配置为用于接收可以通过分析物的照射和拉曼增强结构产生的拉曼散射辐射的辐射接收器。

    Dynamic random separation among nanoparticles for nano enhanced Raman spectroscopy (NERS) molecular sensing
    6.
    发明授权
    Dynamic random separation among nanoparticles for nano enhanced Raman spectroscopy (NERS) molecular sensing 有权
    用于纳米增强拉曼光谱(NERS)分子感测的纳米颗粒之间的动态随机分离

    公开(公告)号:US07372562B2

    公开(公告)日:2008-05-13

    申请号:US11252146

    申请日:2005-10-17

    IPC分类号: G01J3/44 G01N21/90

    CPC分类号: G01N21/658 Y10S977/786

    摘要: A system for performing nanostructure-enhanced Raman spectroscopy (NERS) includes a radiation source, a radiation detector configured to detect Raman scattered radiation scattered by an analyte, and a container configured to provide a sealed enclosure. The NERS system further includes a turbulence generating device configured to generate random dynamic motion of a plurality of nanoparticles within the container. A method for performing NERS includes providing a container configured to provide a sealed enclosure, providing a plurality of nanoparticles each comprising a NERS-active material and an analyte within the container, causing random dynamic motion of the plurality of nanoparticles and the analyte, irradiating the plurality of nanoparticles and the analyte with radiation, and detecting Raman scattered radiation scattered by the analyte.

    摘要翻译: 用于执行纳米结构增强拉曼光谱(NERS)的系统包括辐射源,被配置为检测被分析物散射的拉曼散射辐射的辐射检测器和被配置为提供密封外壳的容器。 NERS系统还包括被配置成产生容器内的多个纳米颗粒的随机动态运动的湍流产生装置。 一种用于执行NERS的方法包括提供一种被配置成提供密封外壳的容器,提供多个纳米颗粒,每个纳米颗粒包含在容器内的NERS-活性材料和分析物,引起多个纳米颗粒和分析物的随机动态运动, 多个纳米颗粒和分析物与辐射,并检测被分析物散射的拉曼散射辐射。

    Method for fabricating a nano-imprinting mold
    7.
    发明授权
    Method for fabricating a nano-imprinting mold 失效
    用于压印光刻及其制造的装置

    公开(公告)号:US07368395B2

    公开(公告)日:2008-05-06

    申请号:US11601084

    申请日:2006-11-16

    IPC分类号: H01L21/461

    CPC分类号: H01L21/76838 H01L21/0337

    摘要: An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.

    摘要翻译: 压印装置和制造方法提供具有用于压印的图案的模具。 该装置包括沿[110]方向抛光的半导体衬底。 半导体衬底具有(110)水平平面和湿化学蚀刻沟槽的垂直侧壁。 侧壁与半导体衬底对准并且因此是(111)垂直的晶格面。 半导体衬底包括在侧壁之间的多个垂直结构,其中垂直结构可以是纳米级隔开的。 该方法包括在(111)垂直晶格面的半导体衬底的(110)水平表面的暴露部分中湿式蚀刻具有间隔开(111)垂直侧壁的沟槽。 使用蚀刻比(110)水平晶格面慢的(111)垂直晶格面的化学蚀刻溶液。 该方法还包括形成压印模具。

    Apparatus for imprinting lithography and fabrication thereof
    8.
    发明授权
    Apparatus for imprinting lithography and fabrication thereof 失效
    用于压印光刻及其制造的装置

    公开(公告)号:US07141866B1

    公开(公告)日:2006-11-28

    申请号:US10826056

    申请日:2004-04-16

    IPC分类号: H01L29/04 H01L31/036

    CPC分类号: H01L21/76838 H01L21/0337

    摘要: An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.

    摘要翻译: 压印装置和制造方法提供具有用于压印的图案的模具。 该装置包括沿[110]方向抛光的半导体衬底。 半导体衬底具有(110)水平平面和湿化学蚀刻沟槽的垂直侧壁。 侧壁与半导体衬底对准并且因此是(111)垂直的晶格面。 半导体衬底包括在侧壁之间的多个垂直结构,其中垂直结构可以是纳米级隔开的。 该方法包括在(111)垂直晶格面的半导体衬底的(110)水平表面的暴露部分中湿式蚀刻具有间隔开(111)垂直侧壁的沟槽。 使用蚀刻比(110)水平晶格面慢的(111)垂直晶格面的化学蚀刻溶液。 该方法还包括形成压印模具。