Infrared sensing devices and methods

    公开(公告)号:US10345154B2

    公开(公告)日:2019-07-09

    申请号:US15997836

    申请日:2018-06-05

    摘要: An infrared sensor assembly for sensing infrared radiation comprises infrared sensing elements and the infrared sensing compensation elements that are different so that, for a same flux on the infrared sensing elements and the infrared sensing compensation elements, the radiation responsive element of the infrared sensing elements absorbs more radiation than the radiation responsive element of the infrared sensing compensation elements, as to receive substantially more radiation than the radiation responsive element of the infrared sensing compensation elements. An output of the sensor array is a subtractive function of a sum of the signals of the plurality of infrared sensing elements and a sum of the signals of the plurality of the infrared sensing compensation elements such that at least linear and/or non-linear parasitic thermal fluxes are at least partly compensated for.

    Low-drift infrared detector
    2.
    发明授权

    公开(公告)号:US10337926B2

    公开(公告)日:2019-07-02

    申请号:US16191733

    申请日:2018-11-15

    摘要: A semiconductor device for measuring IR radiation comprising: at least one sensor pixel; at least one reference pixel shielded from said IR radiation comprising a heater; a controller adapted for: measuring a responsivity by applying power to the heater, while not heating the sensor pixel; measuring a first output signal of an unheated pixel and a first reference output signal of the heated pixel, obtaining the responsivity as a function of a measure of the applied power to the heater and of the difference between the first output signal and the first reference output signal; applying a period of cooling down until the temperature of the reference pixel and the sensor pixel are substantially the same; generating the output signal indicative of the IR radiation, based on the difference between the sensor and the reference output signal, by converting this difference using the responsivity.

    Semiconductor device having a transparent window for passing radiation

    公开(公告)号:US10217874B2

    公开(公告)日:2019-02-26

    申请号:US15463180

    申请日:2017-03-20

    摘要: Method of encapsulating a semiconductor structure comprising providing a semiconductor structure comprising an opto-electric element located in a cavity formed between a substrate and a cap layer, the cap layer being made of a material transparent to light, and having a flat upper surface; forming at least one protrusion on the cap layer; bringing the at least one protrusion of the cap layer in contact with a tool having a flat surface region, and applying a opaque material to the semiconductor structure where it is not in contact with the tool; and removing the tool thereby providing an encapsulated optical semiconductor device having a transparent window integrally formed with the cap layer.

    Infrared sensing devices and methods

    公开(公告)号:US09989405B2

    公开(公告)日:2018-06-05

    申请号:US15211123

    申请日:2016-07-15

    摘要: An infrared sensor assembly for sensing infrared radiation from an object is disclosed. The infrared sensor assembly comprises a sensor array comprising a plurality of sensing elements, provided on or embedded in a substrate extending in a substrate plane. The sensor array comprises at least two infrared sensing elements, each infrared sensing element having a radiation responsive element providing a proportionate electrical signal in response to infrared radiation incident thereto and at least two blind sensing elements, at least one blind sensing element being interspersed among the at least two sensing elements, each blind sensing element being shielded from incident infrared radiation from the object and providing a proportionate electrical signal in response to parasitic thermal fluxes. The output of the sensor array is a function of the infrared sensing elements and of the blind sensing elements such that parasitic thermal fluxes are at least partly compensated for.

    Etching of infrared sensor membrane
    8.
    发明授权
    Etching of infrared sensor membrane 有权
    红外传感器膜的蚀刻

    公开(公告)号:US09184330B2

    公开(公告)日:2015-11-10

    申请号:US14578701

    申请日:2014-12-22

    摘要: The invention relates to an infrared thermal sensor comprising a substrate having a cavity, a cavity bottom wall formed by a continuous substrate surface. The sensor comprises a membrane adapted for receiving heat from incident infrared radiation, a beam suspending the membrane, and a thermocouple. This membrane comprises openings extending through the membrane for facilitating the passage of an anisotropic etchant for etching the cavity during manufacture. Each opening has a cross-section with a length to width ratio of at least 4. The width direction of respectively a first and a second set of openings is oriented according to respectively a first crystallographic orientation and a second crystallographic orientation, these orientations corresponding to different directions lying in loosely packed crystal lattice faces of the semiconductor substrate.

    摘要翻译: 本发明涉及一种红外热传感器,其包括具有空腔的基板,由连续基板表面形成的空腔底壁。 传感器包括适于从入射的红外辐射接收热量的膜,悬挂膜的光束和热电偶。 该膜包括延伸穿过膜的开口,以便在制造期间便于各向异性蚀刻剂通过蚀刻腔。 每个开口具有长宽比至少为4的横截面。分别第一组和第二组开口的宽度方向分别根据第一结晶取向和第二结晶取向取向,这些取向对应于 不同的方向位于半导体衬底的松散堆积的晶格面上。