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公开(公告)号：US20210159263A1
公开(公告)日：2021-05-27
申请号：US17156639
申请日：2021-01-25
IPC分类号： H01L27/146 , H01L31/0224 , G01J5/16 , G01J5/08 , G01J5/12 , G01J5/04 , B81C1/00 , G01J5/02 , H01L31/09
摘要： A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermoconforms. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.
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公开(公告)号：US20190341419A1
公开(公告)日：2019-11-07
申请号：US16517653
申请日：2019-07-21
IPC分类号： H01L27/146 , G01J5/08 , G01J5/12 , G01J5/02 , B81C1/00 , G01J5/04 , H01L31/09 , H01L31/0224 , G01J5/16
摘要： Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component.
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公开(公告)号：US20220196480A1
公开(公告)日：2022-06-23
申请号：US17612200
申请日：2020-05-28
IPC分类号： G01J5/0806 , G02B1/00 , G01J5/04 , G01J5/02
摘要： A complementary metal oxide semiconductor (CMOS) device embedded with microelectromechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermosensors. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the device using wafer-level vacuum packaging techniques. The cap includes an integrated focusing system with a metalens module for focusing IR radiation onto the sensors.
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公开(公告)号：US20210126038A1
公开(公告)日：2021-04-29
申请号：US17141232
申请日：2021-01-05
IPC分类号： H01L27/146 , G01J5/04 , G01J5/12 , G01J5/02 , B81C1/00 , G01J5/08 , G01J5/16 , H01L31/0224 , H01L31/09
摘要： Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component.
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公开(公告)号：US20190019838A1
公开(公告)日：2019-01-17
申请号：US15647284
申请日：2017-07-12
IPC分类号： H01L27/146 , H01L31/09 , G01J5/08 , G01J5/12 , H01L31/0224 , G01J5/04 , G01J5/16
CPC分类号： H01L27/14669 , B81C1/00 , G01J5/0225 , G01J5/024 , G01J5/046 , G01J5/048 , G01J5/0853 , G01J5/12 , G01J5/16 , G01J2005/123 , H01L27/146 , H01L27/14612 , H01L27/14629 , H01L27/14643 , H01L27/14649 , H01L31/0224 , H01L31/09
摘要： Device and method of forming the devices are disclosed. The method includes providing a substrate prepared with transistor and sensor regions. The substrate is processed by forming a lower sensor cavity in the substrate, filling the lower sensor cavity with a sacrificial material, forming a dielectric membrane in the sensor region, forming a transistor in the transistor region and forming a micro-electrical mechanical system (MEMS) component on the dielectric membrane in the sensor region. The method continues by forming a back-end-of-line (BEOL) dielectric having a plurality of interlayer dielectric (ILD) layers with metal and via levels disposed on the substrate for interconnecting the components of the device. The metal lines in the metal levels are configured to define an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.
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公开(公告)号：US20240351863A1
公开(公告)日：2024-10-24
申请号：US18710198
申请日：2022-11-16
发明人： Wan Chia Ang , Piotr KROPELNICKI
IPC分类号： B81B7/00 , B81C1/00 , G01J5/02 , G01J5/22 , H01L23/522
CPC分类号： B81B7/008 , B81C1/00246 , G01J5/0215 , G01J5/024 , G01J5/22 , H01L23/5226 , B81C2203/0735
摘要： A CMOS-MEMS integrated device and a method for forming such a device are disclosed. The integrated device includes a double released MEMS infrared sensor. The double released MEMS sensor is a free-standing sensor over a lower sensor cavity which is etched into the substrate of the device. The free-spending MEMS sensor is devoid of a support dielectric membrane which supports the MEMS sensor, resulting in the MEMS sensor being suspended over the lower sensor cavity. The support dielectric is removed by a second release process. The second release process may also remove a protective dielectric layer over the MEMS sensor. The MEMS sensor without the protective dielectric layer enhances sensor sensitivity. In other cases, the free-standing MEMS sensor may include an absorber thereover. The absorber enhances sensor sensitivity.
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公开(公告)号：US20190148424A1
公开(公告)日：2019-05-16
申请号：US16224782
申请日：2018-12-18
IPC分类号： H01L27/146 , G01J5/12 , G01J5/20
摘要： Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.
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8.发明申请公开(公告)号：US20190027522A1
公开(公告)日：2019-01-24
申请号：US15653558
申请日：2017-07-19
IPC分类号： H01L27/146
摘要： Device and method of forming a device are disclosed. The device includes a substrate with a transistor component disposed in a transistor region and a micro-electrical mechanical system (MEMS) component disposed on a membrane over a lower sensor cavity in a hybrid region. The MEMS component serves as thermoelectric-based infrared sensor, a thermopile line structure which includes an absorber layer disposed over a portion of oppositely doped first and second line segments. A back-end-of-line (BEOL) dielectric is disposed on the substrate having a plurality of inter layer dielectric (ILD) layers with metal and via levels. The ILD layers include metal lines and via contacts for interconnecting the components of the device. The metal lines in the metal levels are configured to define a BEOL or an upper sensor cavity over the lower sensor cavity, and metal lines of a first metal level of the BEOL dielectric are configured to define a geometry of the MEMS component.
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