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公开(公告)号：US11990498B2
公开(公告)日：2024-05-21
申请号：US17156639
申请日：2021-01-25
IPC分类号： G01J5/12 , B81C1/00 , G01J5/02 , G01J5/04 , G01J5/08 , G01J5/16 , H01L27/146 , H01L31/0224 , H01L31/09
CPC分类号： H01L27/14669 , B81C1/00 , B81C1/00246 , G01J5/0225 , G01J5/024 , G01J5/046 , G01J5/048 , G01J5/0853 , G01J5/12 , G01J5/16 , H01L27/146 , H01L27/14612 , H01L27/14629 , H01L27/14643 , H01L27/14649 , H01L31/0224 , H01L31/09 , B81C2203/0742 , G01J2005/123
摘要： A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermoconforms. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.
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公开(公告)号：US20240351863A1
公开(公告)日：2024-10-24
申请号：US18710198
申请日：2022-11-16
发明人： Wan Chia Ang , Piotr KROPELNICKI
IPC分类号： B81B7/00 , B81C1/00 , G01J5/02 , G01J5/22 , H01L23/522
CPC分类号： B81B7/008 , B81C1/00246 , G01J5/0215 , G01J5/024 , G01J5/22 , H01L23/5226 , B81C2203/0735
摘要： A CMOS-MEMS integrated device and a method for forming such a device are disclosed. The integrated device includes a double released MEMS infrared sensor. The double released MEMS sensor is a free-standing sensor over a lower sensor cavity which is etched into the substrate of the device. The free-spending MEMS sensor is devoid of a support dielectric membrane which supports the MEMS sensor, resulting in the MEMS sensor being suspended over the lower sensor cavity. The support dielectric is removed by a second release process. The second release process may also remove a protective dielectric layer over the MEMS sensor. The MEMS sensor without the protective dielectric layer enhances sensor sensitivity. In other cases, the free-standing MEMS sensor may include an absorber thereover. The absorber enhances sensor sensitivity.
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公开(公告)号：US20220185660A1
公开(公告)日：2022-06-16
申请号：US17440784
申请日：2020-04-01
摘要： A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device monolithically after CMOS processing. For example, the MEMS sensors are formed over a BEOL dielectric of a CMOS device. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region.
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公开(公告)号：US11845653B2
公开(公告)日：2023-12-19
申请号：US17440175
申请日：2020-04-01
IPC分类号： B81C1/00
CPC分类号： B81C1/00238 , B81B2201/0207 , B81B2207/012 , B81C2201/0194 , B81C2203/0714 , B81C2203/0721 , B81C2203/0735 , B81C2203/0771 , B81C2203/0792
摘要： A complementary metal oxide semiconductor (CMOS) device integrated with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device heterogeneously. For example, a CMOS wafer with CMOS devices and interconnections as well as partially processed MEMS modules is bonded with a MEMS wafer with MEMS structures, post CMOS compatibility issues are alleviated. Post integration process to complete the devices includes forming contacts for interconnecting the sensors to the CMOS components as well as encapsulating the devices with a cap wafer using wafer-level vacuum packaging.
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公开(公告)号：US20220162062A1
公开(公告)日：2022-05-26
申请号：US17440175
申请日：2020-04-01
IPC分类号： B81C1/00
摘要： A complementary metal oxide semiconductor (CMOS) device integrated with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device heterogeneously. For example, a CMOS wafer with CMOS devices and interconnections as well as partially processed MEMS modules is bonded with a MEMS wafer with MEMS structures, post CMOS compatibility issues are alleviated. Post integration process to complete the devices includes forming contacts for interconnecting the sensors to the CMOS components as well as encapsulating the devices with a cap wafer using wafer-level vacuum packaging.
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公开(公告)号：US20220196480A1
公开(公告)日：2022-06-23
申请号：US17612200
申请日：2020-05-28
IPC分类号： G01J5/0806 , G02B1/00 , G01J5/04 , G01J5/02
摘要： A complementary metal oxide semiconductor (CMOS) device embedded with microelectromechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermosensors. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the device using wafer-level vacuum packaging techniques. The cap includes an integrated focusing system with a metalens module for focusing IR radiation onto the sensors.
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公开(公告)号：US10923525B2
公开(公告)日：2021-02-16
申请号：US16809561
申请日：2020-03-05
IPC分类号： H01L27/146 , H01L31/0224 , G01J5/16 , G01J5/08 , G01J5/12 , G01J5/04 , B81C1/00 , G01J5/02 , H01L31/09
摘要： A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermosensors. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.
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