IN SITU SELECTIVE ETCHING AND SELECTIVE REGROWTH OF EPITAXIAL LAYER FOR SURFACE RECOMBINATION VELOCITY REDUCTION IN LIGHT EMITTING DIODES

    公开(公告)号:US20220352254A1

    公开(公告)日:2022-11-03

    申请号:US17866452

    申请日:2022-07-15

    Abstract: LED apparatuses and corresponding manufacturing techniques are described. In some examples, an LED apparatus includes a mesa etched from a layered epitaxial structure. The layered epitaxial structure includes a quantum well layer and a barrier layer adjacent to the quantum well layer. The barrier layer overhangs the quantum well layer as a result of the quantum well layer having been etched to a greater depth compared to the barrier layer. In some examples, the quantum well layer and the barrier layer are etched together to produce an area where the barrier layer overhangs the quantum well layer. Etching of the quantum well layer and the barrier layer can be performed after the layered epitaxial structure has been etched to form the mesa, in order to reduce surface imperfections leftover from the mesa etch. In some examples, one or more regrowth semiconductor layers are formed over etched facets of the mesa.

    WAVEGUIDE COUPLER FOR COUPLING LASER BEAM INTO PHOTONIC INTEGRATED CIRCUIT

    公开(公告)号:US20240134115A1

    公开(公告)日:2024-04-25

    申请号:US18489419

    申请日:2023-10-17

    CPC classification number: G02B6/12004 G02B6/1223 G02B6/1228 G02B2006/12147

    Abstract: An edge coupler for coupling a light beam (e.g., a laser beam) into a waveguide comprises a first waveguide section characterized by a first thickness and a first constant width, a second waveguide section physically coupled to the first waveguide section and characterized by the first thickness and a gradually decreasing width, and a third waveguide section partially overlapping with the second waveguide section at an overlap region, the third waveguide section characterized by a gradually increasing width and a second thickness different from (e.g., greater than) the first thickness. In some embodiments, a surface (e.g., the top or bottom surface) of the second waveguide section and a surface (e.g., the top or bottom surface) of the third waveguide section are on a same plane.

    WAVEGUIDE COUPLER FOR COUPLING LASER BEAM INTO PHOTONIC INTEGRATED CIRCUIT

    公开(公告)号:US20240230988A9

    公开(公告)日:2024-07-11

    申请号:US18489419

    申请日:2023-10-18

    CPC classification number: G02B6/12004 G02B6/1223 G02B6/1228 G02B2006/12147

    Abstract: An edge coupler for coupling a light beam (e.g., a laser beam) into a waveguide comprises a first waveguide section characterized by a first thickness and a first constant width, a second waveguide section physically coupled to the first waveguide section and characterized by the first thickness and a gradually decreasing width, and a third waveguide section partially overlapping with the second waveguide section at an overlap region, the third waveguide section characterized by a gradually increasing width and a second thickness different from (e.g., greater than) the first thickness. In some embodiments, a surface (e.g., the top or bottom surface) of the second waveguide section and a surface (e.g., the top or bottom surface) of the third waveguide section are on a same plane.

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