公开(公告)号：US20190393050A1

公开(公告)日：2019-12-26

申请号：US16561906

申请日：2019-09-05

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jaspreet S. Gandhi ,  Dale Arnold

IPC: H01L21/48 ,  H01L23/00 ,  H01L23/498 ,  C23C18/32

Abstract: Apparatuses and methods for formation of a bond site including an opening with a discontinuous profile are disclosed herein. An example apparatus may at least include a substrate, a contact on the substrate, and a mask layer formed on the substrate and at least a portion of the contact. The mask layer may also include an opening formed therein, with the opening having a discontinuous profile from a top surface of the mask layer to the contact.

公开(公告)号：US10410882B2

公开(公告)日：2019-09-10

申请号：US15847687

申请日：2017-12-19

Applicant: Micron Technology, Inc.

Inventor： Jaspreet S. Gandhi ,  Dale Arnold

IPC: H01L21/48 ,  H01L23/498 ,  C23C18/32 ,  H01L23/00

Abstract: Apparatuses and methods for formation of a bond site including an opening with a discontinuous profile are disclosed herein. An example apparatus may at least include a substrate, a contact on the substrate, and a mask layer formed on the substrate and at least a portion of the contact. The mask layer may also include an opening formed therein, with the opening having a discontinuous profile from a top surface of the mask layer to the contact.

公开(公告)号：US09881858B2

公开(公告)日：2018-01-30

申请号：US14798261

申请日：2015-07-13

Applicant: Micron Technology, Inc.

Inventor： Jaspreet Gandhi ,  Dale Arnold

IPC: H05K1/11 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49811 ,  H01L21/4846 ,  H01L21/4853 ,  H01L23/49894

Abstract: Apparatuses and methods for formation of a bond site including an opening with a discontinuous profile are disclosed herein. An example apparatus may at least include a substrate, a contact on the substrate, and a mask layer formed on the substrate and at least a portion of the contact. The mask layer may also include an opening formed therein, with the opening having a discontinuous profile from a top surface of the mask layer to the contact.

公开(公告)号：US20170018489A1

公开(公告)日：2017-01-19

申请号：US14798261

申请日：2015-07-13

Applicant: Micron Technology, Inc.

Inventor： Jaspreet Gandhi ,  Dale Arnold

IPC: H01L23/498 ,  H05K1/09 ,  H05K3/06 ,  H01L21/48

CPC classification number: H01L23/49811 ,  H01L21/4846 ,  H01L21/4853 ,  H01L23/49894

Abstract: Apparatuses and methods for formation of a bond site including an opening with a discontinuous profile are disclosed herein. An example apparatus may at least include a substrate, a contact on the substrate, and a mask layer formed on the substrate and at least a portion of the contact. The mask layer may also include an opening formed therein, with the opening having a discontinuous profile from a top surface of the mask layer to the contact.

Abstract translation: 本文公开了用于形成包括具有不连续轮廓的开口的键合位置的装置和方法。 一个示例性装置可以至少包括衬底，在衬底上的接触，以及形成在衬底上的掩模层和接触件的至少一部分。 掩模层还可以包括其中形成的开口，其中开口具有从掩模层的顶表面到触点的不连续的轮廓。

公开(公告)号：US20240371914A1

公开(公告)日：2024-11-07

申请号：US18652081

申请日：2024-05-01

Applicant: Micron Technology, Inc.

Inventor： Carlos Franco ,  Dale Arnold ,  Dan Soto

IPC: H01L25/18 ,  H10B80/00 ,  H01L23/00

Abstract: Systems, methods, and apparatus are provided for a bond wire induction apparatus. A particular induction apparatus can include a memory package comprising a substrate and a plurality of memory layers, a plurality of conductive nodes connected by a plurality of conductive traces to form a first portion of an induction device. In this embodiment, the first portion of the inductive device comprises an inductive coil within at least two layers of the plurality of memory layers of the memory package. In addition, the apparatus can include a plurality of bond traces to couple a first portion of the plurality of conductive nodes to a second portion of the plurality of conductive nodes to form a second portion of the inductive device, such that the second portion of the inductive device comprises an inductive bond wire in a physical area that is physically outside the memory package.

公开(公告)号：US20190074194A1

公开(公告)日：2019-03-07

申请号：US15847687

申请日：2017-12-19

Applicant: Micron Technology, Inc.

Inventor： Jaspreet S. Gandhi ,  Dale Arnold

IPC: H01L21/48 ,  H01L23/498 ,  H01L23/00 ,  C23C18/32

CPC classification number: H01L21/4846 ,  C23C18/32 ,  H01L21/481 ,  H01L21/4853 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/13025 ,  H01L2224/16227 ,  H01L2224/16237

Abstract: Apparatuses and methods for formation of a bond site including an opening with a discontinuous profile are disclosed herein. An example apparatus may at least include a substrate, a contact on the substrate, and a mask layer formed on the substrate and at least a portion of the contact. The mask layer may also include an opening formed therein, with the opening having a discontinuous profile from a top surface of the mask layer to the contact.