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    Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, memory arrays incorporating such strings, and methods of accesssing and forming the same
    1.
    发明授权
    Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, memory arrays incorporating such strings, and methods of accesssing and forming the same 有权
    多半导体材料垂直存储器串，具有单独偏置通道区的存储单元串，并入这种串的存储器阵列，以及访问和形成其的方法

    公开(公告)号：US08687426B2

    公开(公告)日：2014-04-01

    申请号：US13793258

    申请日：2013-03-11

    Applicant: Micron Technology, Inc.

    Inventor： Fred Fishburn

    IPC: G11C16/04

    CPC classification number: H01L29/78 ,  G11C16/0408 ,  H01L27/11551 ,  H01L27/11556 ,  H01L29/66477 ,  H01L29/66666 ,  H01L29/7827

    Abstract: Multi-semiconductor vertical memory strings, strings of memory cells having individually biasable channel regions, arrays incorporating such strings and methods for forming and accessing such strings are provided. For example non-volatile memory devices are disclosed that utilize NAND strings of serially-connected non-volatile memory cells. One such string can include two or more serially connected non-volatile memory cells each having a channel region. Each memory cell of the two or more serially connected non-volatile memory cells shares a common control gate and each memory cell of the two or more serially connected non-volatile memory cells is configured to receive an individual bias to its channel region.

    Abstract translation: 提供了多半导体垂直存储器串，具有单独可偏置通道区的存储单元串，并入这些字符串的阵列以及用于形成和访问这些字符串的方法。 例如，公开了利用串联连接的非易失性存储器单元的NAND串的非易失性存储器件。 一个这样的串可以包括两个或更多个串联的非易失性存储单元，每个非易失性存储单元都具有通道区域。 两个或更多个串行连接的非易失性存储器单元的每个存储器单元共享公共控制栅极，并且两个或多个串行连接的非易失性存储器单元的每个存储器单元被配置为向其沟道区域接收单个偏置。

    MULTI-SEMICONDUCTOR MATERIAL VERTICAL MEMORY STRINGS, STRINGS OF MEMORY CELLS HAVING INDIVIDUALLY BIASABLE CHANNEL REGIONS, MEORY ARRAYS INCORPORATING SUCH STRINGS, AND METHODS OF ACCESSSING AND FORMING THE SAME
    2.
    发明申请
    MULTI-SEMICONDUCTOR MATERIAL VERTICAL MEMORY STRINGS, STRINGS OF MEMORY CELLS HAVING INDIVIDUALLY BIASABLE CHANNEL REGIONS, MEORY ARRAYS INCORPORATING SUCH STRINGS, AND METHODS OF ACCESSSING AND FORMING THE SAME 有权
    多个半导体材料垂直存储器条带，具有独立可变通道区域的存储器单元的行，包含这种行的记录阵列及其访问和形成方法

    公开(公告)号：US20130187214A1

    公开(公告)日：2013-07-25

    申请号：US13793258

    申请日：2013-03-11

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Fred Fishburn

    IPC: H01L29/78 ,  H01L29/66

    CPC classification number: H01L29/78 ,  G11C16/0408 ,  H01L27/11551 ,  H01L27/11556 ,  H01L29/66477 ,  H01L29/66666 ,  H01L29/7827

    Abstract: Multi-semiconductor vertical memory strings, strings of memory cells having individually biasable channel regions, arrays incorporating such strings and methods for forming and accessing such strings are provided. For example non-volatile memory devices are disclosed that utilize NAND strings of serially-connected non-volatile memory cells. One such string can include two or more serially connected non-volatile memory cells each having a channel region. Each memory cell of the two or more serially connected non-volatile memory cells shares a common control gate and each memory cell of the two or more serially connected non-volatile memory cells is configured to receive an individual bias to its channel region.

    Abstract translation: 提供了多半导体垂直存储器串，具有单独可偏置通道区的存储单元串，并入这些字符串的阵列以及用于形成和访问这些字符串的方法。 例如，公开了利用串联连接的非易失性存储器单元的NAND串的非易失性存储器件。 一个这样的串可以包括两个或更多个串联的非易失性存储单元，每个非易失性存储单元都具有通道区域。 两个或更多个串行连接的非易失性存储器单元的每个存储器单元共享公共控制栅极，并且两个或多个串行连接的非易失性存储器单元的每个存储器单元被配置为向其沟道区域接收单个偏置。

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