公开(公告)号：US20110265951A1

公开(公告)日：2011-11-03

申请号：US12908644

申请日：2010-10-20

Applicant: MING XU ,  ANDREW NGUYEN ,  EVANS LEE ,  JARED AHMAD LEE ,  JAMES P. CRUSE ,  CORIE LYNN COBB ,  MARTIN JEFF SALINAS ,  ANCHEL SHEYNER ,  EZRA ROBERT GOLD ,  JOHN W. LANE

Inventor： MING XU ,  ANDREW NGUYEN ,  EVANS LEE ,  JARED AHMAD LEE ,  JAMES P. CRUSE ,  CORIE LYNN COBB ,  MARTIN JEFF SALINAS ,  ANCHEL SHEYNER ,  EZRA ROBERT GOLD ,  JOHN W. LANE

IPC: C23F1/08 ,  C23C16/458 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/45561 ,  C23C16/46 ,  C23C16/509 ,  C23C16/54

Abstract: Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber and a second process chamber having independent processing volumes and a plurality of shared resources between the first and second process chambers. In some embodiments, the shared resources include at least one of a shared vacuum pump, a shared gas panel, or a shared heat transfer source.

Abstract translation: 公开了用于双室处理系统的方法和装置，并且在一些实施例中，可以包括具有独立处理量的第一处理室和第二处理室以及第一处理室和第二处理室之间的多个共享资源。 在一些实施例中，共享资源包括共享真空泵，共用气体面板或共用传热源中的至少一个。

公开(公告)号：US20110265814A1

公开(公告)日：2011-11-03

申请号：US12915240

申请日：2010-10-29

Applicant: JAMES P. CRUSE ,  DERMOT CANTWELL ,  MING XU ,  CHARLES HARDY ,  BENJAMIN SCHWARZ ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  ZHIFENG SUI ,  EVANS LEE

Inventor： JAMES P. CRUSE ,  DERMOT CANTWELL ,  MING XU ,  CHARLES HARDY ,  BENJAMIN SCHWARZ ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  ZHIFENG SUI ,  EVANS LEE

IPC: B08B6/00

CPC classification number: H01L21/6719 ,  H01J37/32899

Abstract: Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include flowing a process gas from a shared gas panel to a processing volume of the first process chamber and to a processing volume of the second process chamber; forming a first plasma in the first processing volume to process the first substrate and a second plasma to process the second substrate; monitoring the first processing volume and the second processing volume to determine if a process endpoint is reached in either volume; and either terminating the first and second plasma simultaneously when a first endpoint is reached; or terminating the first plasma when a first endpoint is reached in the first processing volume while continuing to provide the second plasma in the second processing volume until a second endpoint is reached.

Abstract translation: 本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。 在一些实施例中，一种方法可以包括使处理气体从共用气体面板流动到第一处理室的处理容积和第二处理室的处理容积; 在所述第一处理体积中形成第一等离子体以处理所述第一基板和第二等离子体以处理所述第二基板; 监测第一处理量和第二处理量以确定任一体积中是否达到过程终点; 并且当达到第一端点时同时终止第一和第二等离子体; 或在第一处理容积中达到第一端点时终止第一等离子体，同时继续在第二处理容积中提供第二等离子体直到达到第二端点。

公开(公告)号：US20110265884A1

公开(公告)日：2011-11-03

申请号：US12907952

申请日：2010-10-19

Applicant: MING XU ,  ANDREW NGUYEN ,  EVANS LEE

Inventor： MING XU ,  ANDREW NGUYEN ,  EVANS LEE

IPC: F15D1/00

CPC classification number: H01L21/6719 ,  H01L21/67017 ,  Y10T137/0396 ,  Y10T137/86083

Abstract: Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber having a first vacuum pump to maintain a first operating pressure in a first processing volume selectively isolatable by a first gate valve disposed between the first processing volume and the first vacuum pump; a second process chamber having a second vacuum pump for maintaining a second operating pressure in a second processing volume selectively isolatable by a second gate valve disposed between the second processing volume and the second vacuum pump; and a shared vacuum pump coupled to the first and second processing volumes to reduce a pressure in each processing volume below a critical pressure level, wherein the shared vacuum pump can be selectively isolated from any of the first or second process chambers or the first or second vacuum pumps.

Abstract translation: 公开了用于双室处理系统的方法和装置，并且在一些实施例中，可以包括具有第一真空泵的第一处理室，以保持第一处理容积中的第一操作压力，所述第一处理容积可选择性地通过设置在第一 加工量和第一台真空泵; 具有第二真空泵的第二处理室，用于保持第二处理容积中的第二操作压力，所述第二处理容积可由设置在所述第二处理容积和所述第二真空泵之间的第二闸阀选择性分离; 以及耦合到所述第一和第二处理体积的共享真空泵，以将每个处理体积中的压力降低到临界压力水平以下，其中所述共享真空泵可以选择性地与所述第一或第二处理室中的任何一个或所述第一或第二处理室隔离 真空泵。