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    METHODS FOR PROCESSING SUBSTRATES IN PROCESS SYSTEMS HAVING SHARED RESOURCES
    3.
    发明申请
    METHODS FOR PROCESSING SUBSTRATES IN PROCESS SYSTEMS HAVING SHARED RESOURCES 有权
    在具有共享资源的过程系统中处理基板的方法

    公开(公告)号：US20110265814A1

    公开(公告)日：2011-11-03

    申请号：US12915240

    申请日：2010-10-29

    Applicant: JAMES P. CRUSE ,  DERMOT CANTWELL ,  MING XU ,  CHARLES HARDY ,  BENJAMIN SCHWARZ ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  ZHIFENG SUI ,  EVANS LEE

    Inventor： JAMES P. CRUSE ,  DERMOT CANTWELL ,  MING XU ,  CHARLES HARDY ,  BENJAMIN SCHWARZ ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  ZHIFENG SUI ,  EVANS LEE

    IPC: B08B6/00

    CPC classification number: H01L21/6719 ,  H01J37/32899

    Abstract: Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include flowing a process gas from a shared gas panel to a processing volume of the first process chamber and to a processing volume of the second process chamber; forming a first plasma in the first processing volume to process the first substrate and a second plasma to process the second substrate; monitoring the first processing volume and the second processing volume to determine if a process endpoint is reached in either volume; and either terminating the first and second plasma simultaneously when a first endpoint is reached; or terminating the first plasma when a first endpoint is reached in the first processing volume while continuing to provide the second plasma in the second processing volume until a second endpoint is reached.

    Abstract translation: 本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。 在一些实施例中，一种方法可以包括使处理气体从共用气体面板流动到第一处理室的处理容积和第二处理室的处理容积; 在所述第一处理体积中形成第一等离子体以处理所述第一基板和第二等离子体以处理所述第二基板; 监测第一处理量和第二处理量以确定任一体积中是否达到过程终点; 并且当达到第一端点时同时终止第一和第二等离子体; 或在第一处理容积中达到第一端点时终止第一等离子体，同时继续在第二处理容积中提供第二等离子体直到达到第二端点。

    Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion
    4.
    发明授权
    Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion 失效
    具有径向向上倾斜天花板的薄膜处理等离子体反应器室，用于促进径向向外扩散

    公开(公告)号：US6076482A

    公开(公告)日：2000-06-20

    申请号：US937347

    申请日：1997-09-20

    Applicant: Ji Ding ,  James Carducci ,  Hongching Shan ,  Siamak Salimian ,  Evans Lee ,  Paul E. Luscher ,  Mike Welch

    Inventor： Ji Ding ,  James Carducci ,  Hongching Shan ,  Siamak Salimian ,  Evans Lee ,  Paul E. Luscher ,  Mike Welch

    IPC: H01J37/32 ,  C23C16/00 ,  C23F1/02 ,  H01L21/302

    CPC classification number: H01J37/32458 ,  H01J37/321

    Abstract: The invention contours the chamber surface overlying semiconductor wafer being processed (i.e., the chamber ceiling) in such a way as to promote or optimize the diffusion of plasma ions from their regions of origin to other regions which would otherwise have a relative paucity of plasma ions. This is accomplished by providing a greater chamber volume over those areas of the wafer otherwise experiencing a shortage of plasma ions and a smaller chamber volume over those areas of the wafer experiencing a plentitude of plasma ions (e.g, due to localized plasma generation occurring over the latter areas). Thus, the ceiling is contoured to promote a plasma ion diffusion which best compensates for localized or non-uniform patterns in plasma ion generation typical of an inductively coupled source (e.g., an overhead inductive antenna). Specifically, the invention provides a lesser ceiling height (relative to the wafer surface) over regions in which plasma ions are generated or tend to congregate and a greater ceiling height in other regions. More specifically, in the case of an overlying inductive antenna where plasma ion density tends to fall off toward the wafer periphery, the ceiling contour is such that the ceiling height increases radially, i.e., toward the wafer periphery. This promotes or increases plasma ion diffusion toward the wafer periphery as a function of the rate at which the ceiling height increases radially.

    Abstract translation: 本发明轮廓地覆盖正在被处理的半导体晶片（即，室顶）上的腔表面，以促进或优化等离子体离子从其原始区域扩散到否则将具有相对低的等离子体离子的其它区域 。 这通过在晶片的那些区域上提供更大的室体积，否则经历等离子体离子的短缺，并且在经历等离子体离子的大量的晶片的那些区域（例如，由于在 后面的区域）。 因此，天花板的轮廓是促进等离子体离子扩散，其最好地补偿电感耦合源（例如，架空感应天线）典型的等离子体离子产生中的局部或非均匀图案。 具体地说，本发明提供了在其中产生等离子体离子或倾向聚集的区域和在其它区域中具有更大的天花板高度的较小的天花板高度（相对于晶片表面）。 更具体地说，在等离子体离子密度倾向于朝向晶片周边倾斜的上覆感应天线的情况下，天花板高度使天花板高度径向增加，即朝向晶片周边。 这促进或增加等离子体离子向晶片周边的扩散，这是天花板高度径向增加的速率的函数。

    Magnet assembly for plasma containment
    7.
    发明申请
    Magnet assembly for plasma containment 有权
    用于等离子体容纳的磁体组件

    公开(公告)号：US20050115678A1

    公开(公告)日：2005-06-02

    申请号：US10726008

    申请日：2003-12-01

    Applicant: Anthony Vesci ,  Vince Kirchhoff ,  James Woodward ,  Kevin Hughes ,  Mark Pyl ,  Tetsuya Ishikawa ,  Evans Lee

    Inventor： Anthony Vesci ,  Vince Kirchhoff ,  James Woodward ,  Kevin Hughes ,  Mark Pyl ,  Tetsuya Ishikawa ,  Evans Lee

    IPC: H01J37/32 ,  H01L21/306

    CPC classification number: H01J37/32623 ,  H01J37/3266 ,  Y10S156/916

    Abstract: A magnet assembly for a plasma process chamber has a hollow collar comprising a cross-section that is absent seams. The hollow collar has an open end face and a cap is provided to seal the open end face of the collar. A plurality of magnets are in the hollow collar, the magnets being insertable through the open end face. The collar is capable of being snap fitted onto the chamber wall. The magnet assembly can also comprise one or more of the collars such that the collars, when installed, form a substantially continuous ring about a chamber wall.

    Abstract translation: 用于等离子体处理室的磁体组件具有包括不存在接缝的横截面的中空轴环。 空心轴环具有敞开的端面，并且设有盖以密封轴环的开口端面。 多个磁体位于空心环中，磁体可通过开口端面插入。 套环能够被卡扣到室壁上。 磁体组件还可以包括一个或多个轴环，使得套环在安装时围绕室壁形成基本上连续的环。

    Methods for processing substrates in process systems having shared resources
    8.
    发明授权
    Methods for processing substrates in process systems having shared resources 有权
    在具有共享资源的处理系统中处理衬底的方法

    公开(公告)号：US08496756B2

    公开(公告)日：2013-07-30

    申请号：US12915240

    申请日：2010-10-29

    Applicant: James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

    Inventor： James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

    IPC: B08B6/00

    CPC classification number: H01L21/6719 ,  H01J37/32899

    Abstract: Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include flowing a process gas from a shared gas panel to a processing volume of the first process chamber and to a processing volume of the second process chamber; forming a first plasma in the first processing volume to process the first substrate and a second plasma to process the second substrate; monitoring the first processing volume and the second processing volume to determine if a process endpoint is reached in either volume; and either terminating the first and second plasma simultaneously when a first endpoint is reached; or terminating the first plasma when a first endpoint is reached in the first processing volume while continuing to provide the second plasma in the second processing volume until a second endpoint is reached.

    Abstract translation: 本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。 在一些实施例中，一种方法可以包括将处理气体从共用气体面板流动到第一处理室的处理容积和第二处理室的处理容积; 在所述第一处理体积中形成第一等离子体以处理所述第一基板和第二等离子体以处理所述第二基板; 监测第一处理量和第二处理量以确定任一体积中是否达到过程终点; 并且当达到第一端点时同时终止第一和第二等离子体; 或在第一处理容积中达到第一端点时终止第一等离子体，同时继续在第二处理容积中提供第二等离子体直到达到第二端点。

    TWIN CHAMBER PROCESSING SYSTEM WITH SHARED VACUUM PUMP
    9.
    发明申请
    TWIN CHAMBER PROCESSING SYSTEM WITH SHARED VACUUM PUMP 审中-公开
    具有共享真空泵的双腔加工系统

    公开(公告)号：US20110265884A1

    公开(公告)日：2011-11-03

    申请号：US12907952

    申请日：2010-10-19

    Applicant: MING XU ,  ANDREW NGUYEN ,  EVANS LEE

    Inventor： MING XU ,  ANDREW NGUYEN ,  EVANS LEE

    IPC: F15D1/00

    CPC classification number: H01L21/6719 ,  H01L21/67017 ,  Y10T137/0396 ,  Y10T137/86083

    Abstract: Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber having a first vacuum pump to maintain a first operating pressure in a first processing volume selectively isolatable by a first gate valve disposed between the first processing volume and the first vacuum pump; a second process chamber having a second vacuum pump for maintaining a second operating pressure in a second processing volume selectively isolatable by a second gate valve disposed between the second processing volume and the second vacuum pump; and a shared vacuum pump coupled to the first and second processing volumes to reduce a pressure in each processing volume below a critical pressure level, wherein the shared vacuum pump can be selectively isolated from any of the first or second process chambers or the first or second vacuum pumps.

    Abstract translation: 公开了用于双室处理系统的方法和装置，并且在一些实施例中，可以包括具有第一真空泵的第一处理室，以保持第一处理容积中的第一操作压力，所述第一处理容积可选择性地通过设置在第一 加工量和第一台真空泵; 具有第二真空泵的第二处理室，用于保持第二处理容积中的第二操作压力，所述第二处理容积可由设置在所述第二处理容积和所述第二真空泵之间的第二闸阀选择性分离; 以及耦合到所述第一和第二处理体积的共享真空泵，以将每个处理体积中的压力降低到临界压力水平以下，其中所述共享真空泵可以选择性地与所述第一或第二处理室中的任何一个或所述第一或第二处理室隔离 真空泵。

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