公开(公告)号：US20130334199A1

公开(公告)日：2013-12-19

申请号：US13985497

申请日：2012-02-09

Applicant: Imad Yousif ,  Martin Jeffrey Salinas ,  Paul B. Reuter ,  Aniruddha Pal ,  Jared Ahmad Lee

Inventor： Imad Yousif ,  Martin Jeffrey Salinas ,  Paul B. Reuter ,  Aniruddha Pal ,  Jared Ahmad Lee

IPC: H01L21/263 ,  H05B3/00

CPC classification number: H01L21/67103 ,  H01L21/263 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6838 ,  H01L21/68792 ,  H05B3/00

Abstract: Embodiments of the present invention provide an apparatus heating and supporting a substrate in a processing chamber. One embodiment of the present invention provides a substrate support assembly. The substrate support assembly includes a heated plate having a substrate supporting surface on a front side and a cantilever arm extending from a backside of the heated plate. The heated plate is configured to support and heat a substrate on the substrate supporting surface. The cantilever arm has a first end attached to the heated plate near a central axis of the heated plate, and a second end extending radially outwards from the central axis.

Abstract translation: 本发明的实施例提供一种在处理室中加热和支撑衬底的装置。 本发明的一个实施例提供一种基板支撑组件。 基板支撑组件包括加热板，其具有在前侧上的基板支撑表面和从加热板的后侧延伸的悬臂。 加热板被配置为支撑和加热基板支撑表面上的基板。 悬臂具有附接到加热板附近加热板的中心轴线的第一端和从中心轴径向向外延伸的第二端。

公开(公告)号：US20090272717A1

公开(公告)日：2009-11-05

申请号：US12407548

申请日：2009-03-19

Applicant: Sharma V. Pamarthy ,  Jon C. Farr ,  Khalid Sirajuddin ,  Ezra Robert Gold ,  James P. Cruse ,  Scott Olszewski ,  Roy C. Nangoy ,  Saravjeet Singh ,  Douglas A. Buchberger, JR. ,  Jared Ahmad Lee ,  Chunlei Zhang

Inventor： Sharma V. Pamarthy ,  Jon C. Farr ,  Khalid Sirajuddin ,  Ezra Robert Gold ,  James P. Cruse ,  Scott Olszewski ,  Roy C. Nangoy ,  Saravjeet Singh ,  Douglas A. Buchberger, JR. ,  Jared Ahmad Lee ,  Chunlei Zhang

IPC: C23F1/00

CPC classification number: H01L21/30655 ,  Y10T137/0318 ,  Y10T137/87169

Abstract: Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.

Abstract translation: 本发明的实施例涉及一种基板蚀刻系统和工艺。 在一个实施例中，一种方法可以包括在沉积工艺期间在衬底上沉积材料，在第一蚀刻工艺期间蚀刻衬底的第一层，以及在第二蚀刻工艺期间蚀刻衬底的第二层，其中第一偏置功率 在第一工艺期间施加到衬底，并且其中在第二蚀刻工艺期间将第二偏压功率施加到衬底。 在另一个实施例中，系统可以包括气体输送系统，其包含用于向腔室供应第一气体的第一气体面板，用于向腔室供应第二气体的第二气体面板，以及用于将气体引导到 该室用于促进在进出室和面板之间的气体之间的快速气体转变。

公开(公告)号：US20080202588A1

公开(公告)日：2008-08-28

申请号：US11678623

申请日：2007-02-26

Applicant: Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

Inventor： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

IPC: F17D3/00

CPC classification number: C23C16/52 ,  C23C16/4412 ,  C23C16/455 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/0318 ,  Y10T137/0324 ,  Y10T137/87249

Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

Abstract translation: 提供了一种用于将气体输送到半导体处理系统的方法和装置。 在一个实施例中，用于将气体输送到半导体处理系统的装置包括具有入口和出口的多个气体输入和输出管线。 连接线耦合各对气体输入和气体输出线。 连接阀布置成控制通过相应连接线的流动。 质量气体流量控制器布置成控制流入相应入口的流量。 在另一个实施例中，一种方法包括提供具有至少多个入口的歧管，歧管可以选择性地联接到多个出口中的至少一个出口，使一个或多个气体通过歧管流过真空环境，旁通处理室 在处理之前或校准电路，并且在衬底处理期间使一种或多种气体流入处理室。

公开(公告)号：US10453694B2

公开(公告)日：2019-10-22

申请号：US14002087

申请日：2012-02-29

Applicant: Jared Ahmad Lee ,  Martin Jeffrey Salinas ,  Paul B. Reuter ,  Imad Yousif ,  Aniruddha Pal

Inventor： Jared Ahmad Lee ,  Martin Jeffrey Salinas ,  Paul B. Reuter ,  Imad Yousif ,  Aniruddha Pal

IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/687

Abstract: Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.

公开(公告)号：US08992689B2

公开(公告)日：2015-03-31

申请号：US13408703

申请日：2012-02-29

Applicant: Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

Inventor： Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

IPC: B08B5/00 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32357 ,  H01L21/67201

Abstract: Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well.

Abstract translation: 提供从底物中除去含卤素残基的方法。 通过结合加热和等离子体消除步骤，可以提高制造产量。 此外，通过适当地控制减压室中的压力，也可以提高除去效率。

公开(公告)号：US20110265951A1

公开(公告)日：2011-11-03

申请号：US12908644

申请日：2010-10-20

Applicant: MING XU ,  ANDREW NGUYEN ,  EVANS LEE ,  JARED AHMAD LEE ,  JAMES P. CRUSE ,  CORIE LYNN COBB ,  MARTIN JEFF SALINAS ,  ANCHEL SHEYNER ,  EZRA ROBERT GOLD ,  JOHN W. LANE

Inventor： MING XU ,  ANDREW NGUYEN ,  EVANS LEE ,  JARED AHMAD LEE ,  JAMES P. CRUSE ,  CORIE LYNN COBB ,  MARTIN JEFF SALINAS ,  ANCHEL SHEYNER ,  EZRA ROBERT GOLD ,  JOHN W. LANE

IPC: C23F1/08 ,  C23C16/458 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/45561 ,  C23C16/46 ,  C23C16/509 ,  C23C16/54

Abstract: Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber and a second process chamber having independent processing volumes and a plurality of shared resources between the first and second process chambers. In some embodiments, the shared resources include at least one of a shared vacuum pump, a shared gas panel, or a shared heat transfer source.

Abstract translation: 公开了用于双室处理系统的方法和装置，并且在一些实施例中，可以包括具有独立处理量的第一处理室和第二处理室以及第一处理室和第二处理室之间的多个共享资源。 在一些实施例中，共享资源包括共享真空泵，共用气体面板或共用传热源中的至少一个。

公开(公告)号：US07846497B2

公开(公告)日：2010-12-07

申请号：US11678623

申请日：2007-02-26

Applicant: Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

Inventor： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

IPC: C23C16/00 ,  F17D1/00 ,  F17D1/02

CPC classification number: C23C16/52 ,  C23C16/4412 ,  C23C16/455 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/0318 ,  Y10T137/0324 ,  Y10T137/87249

Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

公开(公告)号：US20080202610A1

公开(公告)日：2008-08-28

申请号：US11678622

申请日：2007-02-26

Applicant: Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

Inventor： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

IPC: F16K21/00

CPC classification number: H01J37/3244 ,  H01J37/32449 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/7761 ,  Y10T137/87249

Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

公开(公告)号：US20130337655A1

公开(公告)日：2013-12-19

申请号：US14002087

申请日：2012-02-29

Applicant: Jared Ahmad Lee ,  Martin Jeffrey Salinas ,  Paul B. Reuter ,  Imad Yousif ,  Aniruddha Pal

Inventor： Jared Ahmad Lee ,  Martin Jeffrey Salinas ,  Paul B. Reuter ,  Imad Yousif ,  Aniruddha Pal

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32844 ,  H01L21/02071 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/68785 ,  Y02C20/30 ,  Y02P70/605

Abstract: Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.

Abstract translation: 本发明的实施例提供一种能够处理基板的双载荷锁定室。 在一个实施例中，双负载锁定室包括限定第一室容积的室主体和彼此隔离的第二室容积。 下部和第二腔室容积中的每一个通过构造成用于衬底转移的两个开口选择性地连接到两个处理环境。 双负载锁定室还包括设置在第二室容积中的加热的衬底支撑组件。 被加热的衬底支撑组件构造成在其上支撑和加热衬底。 双负载锁定室还包括连接到第二室容积的远程等离子体源，用于将等离子体供应到第二室容积。

公开(公告)号：US20130224953A1

公开(公告)日：2013-08-29

申请号：US13746831

申请日：2013-01-22

Applicant: Martin Jeffrey SALINAS ,  Paul B. REUTER ,  Andrew NGUYEN ,  Jared Ahmad LEE

Inventor： Martin Jeffrey SALINAS ,  Paul B. REUTER ,  Andrew NGUYEN ,  Jared Ahmad LEE

IPC: H01L21/306

Abstract: Embodiments of the present invention a load lock chamber including two or more isolated chamber volumes, wherein one chamber volume is configured for processing a substrate and another chamber volume is configured to provide cooling to a substrate. One embodiment of the present invention provides a load lock chamber having at least two isolated chamber volumes formed in a chamber body assembly. The at least two isolated chamber volumes may be vertically stacked. A first chamber volume may be used to process a substrate disposed therein using reactive species. A second chamber volume may include a cooled substrate support.

Abstract translation: 本发明的实施例是一种包括两个或多个隔离室容积的负载锁定室，其中一个室容积被配置用于处理衬底，另一个室体积被配置为向衬底提供冷却。 本发明的一个实施例提供了一种装载锁定室，其具有形成在室主体组件中的至少两个隔离室容积。 至少两个隔离室容积可以垂直堆叠。 可以使用第一室容积来处理其中使用反应物种的衬底。 第二室容积可以包括冷却的基底支撑件。