公开(公告)号：US20210047594A1

公开(公告)日：2021-02-18

申请号：US16980287

申请日：2019-03-05

Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.

Inventor： Takahiro KIKUNAGA ,  Hiroaki HORIE ,  Kimihiro AOYAMA ,  Nobuo TAJIMA

IPC: C11D17/08 ,  C11D7/32 ,  C11D7/50 ,  H01L21/02 ,  H01L21/3213 ,  C11D11/00

Abstract: The present invention can provide a cleaning solution containing 0.2-20 mass % of an amine compound (A), 40-70 mass % of a water-soluble organic solvent (B), and water, wherein the amine compound (A) contains at least one selected from the group consisting of n-butylamine, hexylamine, octylamine, 1,4-butanediamine, dibutylamine, 3-amino-1-propanol, N,N-diethyl-1,3-diaminopropane, and bis(hexamethylene)triamine, and the water-soluble organic solvent (B) has a viscosity of 10 mPa·s or less at 20° C. and a pH of 9.0-14.

公开(公告)号：US20170110363A1

公开(公告)日：2017-04-20

申请号：US15290422

申请日：2016-10-11

Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.

Inventor： Kimihiro AOYAMA ,  Nobuo TAJIMA

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  B08B3/12 ,  C11D3/04 ,  C11D3/39 ,  C11D3/36 ,  H01L21/02 ,  C11D11/00

CPC classification number: H01L21/76814 ,  B08B3/12 ,  C11D3/0073 ,  C11D3/044 ,  C11D3/046 ,  C11D3/364 ,  C11D3/3942 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/10 ,  C11D7/36 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02057 ,  H01L21/02063 ,  H01L23/5226 ,  H01L23/53238

Abstract: [Problem] To provide a liquid cleaning composition for removing a titanium nitride hard mask while suppressing damage to copper, a copper alloy, cobalt or a cobalt alloy upon fabricating a semiconductor device, a cleaning method using the same, and a method for fabricating a semiconductor device.[Solution] A liquid cleaning composition of the present invention used for fabricating a semiconductor device comprises hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphoric acid at 0.0001-0.01% by mass, a zinc salt at 0.0001-0.1% by mass and water.

公开(公告)号：US20130260571A1

公开(公告)日：2013-10-03

申请号：US13799522

申请日：2013-03-13

Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.

Inventor： Hiroshi MATSUNAGA ,  Kimihiro AOYAMA

IPC: C09D7/12 ,  H01L21/033

CPC classification number: C09D7/63 ,  H01L21/02068 ,  H01L21/0337 ,  H01L21/31111

Abstract: The objects of the present invention are to provide a treatment liquid able to inhibit pattern collapse in a microstructure such as a semiconductor device or a micromachine, as well as a method of manufacturing a microstructure using the same.Means to solve the problems is to treat a microstructure with a treatment liquid for inhibiting pattern collapse in a metal microstructure comprising an alkylphosphonic acid or salt thereof in which said alkyl moiety contains 6 to 18 carbon atoms, water, and a water soluble solvent.

Abstract translation: 本发明的目的是提供一种能够抑制诸如半导体器件或微机械的微结构中的图案塌陷的处理液，以及使用该处理液的微结构的制造方法。 解决问题的手段是用包含烷基膦酸或其盐（其中所述烷基部分含有6至18个碳原子）的金属微结构的金属微结构的水处理水溶性溶剂来处理具有处理液的微结构。

公开(公告)号：US20230183887A1

公开(公告)日：2023-06-15

申请号：US17925055

申请日：2021-05-25

Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.

Inventor： Kimihiro AOYAMA ,  Tetsuhiko MIZUSAKA

IPC: D01F2/02 ,  C08J5/06 ,  C08J5/24 ,  C08K5/3445 ,  D01D5/06

CPC classification number: D01F2/02 ,  C08J5/06 ,  C08J5/248 ,  C08K5/3445 ,  D01D5/06 ,  C08J2401/02 ,  D10B2201/22 ,  D10B2505/02

Abstract: Provided are a cellulose fiber containing cellulose II, the cellulose fiber having improved heat resistance, as well as a fiber reinforced resin composition, a method for producing the cellulose fiber, and a method for producing the fiber reinforced resin composition. The cellulose fiber contains the cellulose II having a content of an imidazolium salt of 1% by mass or less.

公开(公告)号：US20220243035A1

公开(公告)日：2022-08-04

申请号：US17605336

申请日：2020-04-21

Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.

Inventor： Kimihiro AOYAMA ,  Tetsuhiko MIZUSAKA ,  Yasuyoshi NAKAYASU ,  Yasuo GOTOH

IPC: C08K5/3445 ,  C08L1/02 ,  D01D5/06

Abstract: Provided is a cellulose solution (a composition) in which decomposition of cellulose does not easily proceed even if heated. Further, provided is a method for producing a cellulose fiber excellent in mechanical strength. The composition includes cellulose and a compound represented by the following formula (1), a concentration of 1-methylimidazolium chloride being 300 ppm or less on a mass basis with respect to the compound represented by the formula (1).
In the formula (1), R is an alkyl group having 2 to 6 carbon atoms, and Me is a methyl group.

公开(公告)号：US20170101607A1

公开(公告)日：2017-04-13

申请号：US15284926

申请日：2016-10-04

Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.

Inventor： Kimihiro AOYAMA ,  Nobuo TAJIMA

IPC: C11D11/00 ,  H01L21/02 ,  C11D7/04 ,  C11D7/36 ,  C11D3/00 ,  C11D7/06

CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D3/3947 ,  C11D7/04 ,  C11D7/06 ,  C11D7/10 ,  C11D7/36 ,  H01L21/02068 ,  H01L21/31144 ,  H01L21/32134

Abstract: [Problem] To provide a liquid cleaning composition for removing a titanium nitride hard mask while suppressing damage to copper, a copper alloy, cobalt or a cobalt alloy upon fabricating a semiconductor device, a cleaning method using the same, and a method for fabricating a semiconductor device.[Solution] A liquid cleaning composition of the present invention used for fabricating a semiconductor device comprises hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphoric acid at 0.0001-0.05% by mass, a compound having a group 13 element at 0.00005-0.5% by mass and water.