Method for manufacturing semiconductor device by backgrinding semiconductor wafer using an adhesive film

    公开(公告)号:US11482441B2

    公开(公告)日:2022-10-25

    申请号:US16089834

    申请日:2017-03-21

    Abstract: A method for manufacturing a semiconductor device includes at least the following three steps: (A) A step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film attached to the circuit-formed surface side of the semiconductor wafer; (B) A step of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer; and (C) A step of radiating ultraviolet rays to the adhesive film and then removing the adhesive film from the semiconductor wafer. The adhesive film includes a base material layer and an ultraviolet-curable adhesive resin layer provided on one surface side thereof. The adhesive resin layer includes an ultraviolet-curable adhesive resin, and a saturated electrostatic potential V1 of a surface of the adhesive resin layer after ultraviolet curing, which is measured using a specific method, is equal to or less than 2.0 kV.

    Method for manufacturing electronic device

    公开(公告)号:US12142522B2

    公开(公告)日:2024-11-12

    申请号:US17596021

    申请日:2020-05-13

    Abstract: A method for manufacturing an electronic device includes at least a step (1) of preparing a structure comprising (i) an adhesive film provided with a base material layer, an adhesive resin layer (A) provided on a first surface side of the base material layer, and an adhesive resin layer (B) provided on a second surface side of the base material layer, (ii) an electronic component attached to the adhesive resin layer (A) of the adhesive film, and (iii) a support substrate attached to the adhesive resin layer (B) of the adhesive film; a step (2) of sealing the electronic component with a sealing material; a step (3) of peeling the support substrate from the structure by reducing an adhesive force of the adhesive resin layer (B) by applying an external stimulus; and a step (4) of peeling the adhesive film from the electronic component.

    Method for manufacturing semiconductor device

    公开(公告)号:US10515839B2

    公开(公告)日:2019-12-24

    申请号:US16319874

    申请日:2017-07-20

    Abstract: A method for manufacturing a semiconductor device includes at least the following three steps. A step (A) of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film attached to the circuit-formed surface side of the semiconductor wafer. A step (B) of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer. A step (C) of radiating ultraviolet rays to the adhesive film and then removing the adhesive film from the semiconductor wafer. In addition, as the adhesive film, an adhesive film having a base material layer, an antistatic layer, and an adhesive resin layer including a conductive additive in this order is used, and the adhesive film is used so that the adhesive resin layer faces the circuit-formed surface side of the semiconductor wafer.

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