公开(公告)号：US20200219734A1

公开(公告)日：2020-07-09

申请号：US16631344

申请日：2018-07-09

Applicant: MITSUI CHEMICALS TOHCELLO, INC.

Inventor： Takashi UNEZAKI ,  Jun KAMADA ,  Akimitsu MORIMOTO ,  Jin KINOSHITA

IPC: H01L21/56 ,  H01L21/304 ,  H01L21/78 ,  H01L21/683

Abstract: Provided is a method of producing an electronic device, including a step of preparing a structure which includes an electronic component having a circuit forming surface, and an adhesive laminated film which includes a base material layer and an adhesive resin layer and in which the adhesive resin layer is attached to the circuit forming surface of the electronic component; a step of back-grinding a surface of the electronic component opposite to the circuit forming surface in a state of being attached to the adhesive laminated film; a step of dicing the electronic component in a state of being attached to the adhesive laminated film; and a step of forming an electromagnetic wave-shielding layer on the separated electronic components in a state of being attached to the adhesive laminated film, in this order.

公开(公告)号：US20200219823A1

公开(公告)日：2020-07-09

申请号：US16631255

申请日：2018-07-09

Applicant: MITSUI CHEMICALS TOHCELLO, INC.

Inventor： Takashi UNEZAKI ,  Jun KAMADA ,  Akimitsu MORIMOTO ,  Jin KINOSHITA

IPC: H01L23/552 ,  H05K9/00 ,  H01L23/00

Abstract: Provided is a method of producing an electronic device, including a step of preparing a structure which includes an electronic component having a circuit forming surface, and an adhesive laminated film which includes a base material layer, an unevenness-absorptive resin layer, and an adhesive resin layer in this order and in which the adhesive resin layer is attached to the circuit forming surface of the electronic component such that the circuit forming surface is protected; and a step of forming an electromagnetic wave-shielding layer on the electronic component in a state of being attached to the adhesive laminated film.

公开(公告)号：US20180197764A1

公开(公告)日：2018-07-12

申请号：US15741564

申请日：2016-07-01

Applicant: MITSUI CHEMICALS TOHCELLO, INC.

Inventor： Jun KAMADA ,  Noboru KAWASAKI ,  Shinichi USUGI ,  Makoto SUKEGAWA ,  Jin KINOSHITA ,  Kouji IGARASHI ,  Akimitsu MORIMOTO

IPC: H01L21/683 ,  H01L21/304 ,  H01L21/283 ,  C09J133/10

CPC classification number: H01L21/6836 ,  B32B27/00 ,  B32B27/30 ,  C09J7/30 ,  C09J133/068 ,  C09J133/10 ,  C09J133/12 ,  C09J201/02 ,  C09J2201/36 ,  C09J2201/622 ,  C09J2203/326 ,  C09J2433/00 ,  C09J2463/00 ,  H01L21/283 ,  H01L21/304 ,  H01L21/67132 ,  H01L21/683 ,  H01L21/68757 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386

Abstract: This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G′bmin of the storage elastic modulus G′b in the range of 25° C. to less than 250° C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G′b250 at 250° C. of 0.005 MPa or above, and a temperature at which G′bmin is exhibited of 50-150° C. The adhesive surface layer C has a minimum value G′cmin of the storage elastic modulus G′c in the range of 25° C. to less than 250° C. of 0.03 MPa.