Abstract:
Provided is a method of producing an electronic device, including a step of preparing a structure which includes an electronic component having a circuit forming surface, and an adhesive laminated film which includes a base material layer and an adhesive resin layer and in which the adhesive resin layer is attached to the circuit forming surface of the electronic component; a step of back-grinding a surface of the electronic component opposite to the circuit forming surface in a state of being attached to the adhesive laminated film; a step of dicing the electronic component in a state of being attached to the adhesive laminated film; and a step of forming an electromagnetic wave-shielding layer on the separated electronic components in a state of being attached to the adhesive laminated film, in this order.
Abstract:
Described is an affixing apparatus capable of flattening a surface of a film affixed to a main surface of a plate-shaped body. An affixing apparatus for affixing the film to the plate-shaped body includes: a plate-shaped mounting member provided with a mounting portion on which the plate-shaped body is mounted; a plate-shaped pressing member installed at a position facing the mounting member; and a support member installed at an outer edge of the mounting portion so as to be positioned between the mounting member and the pressing member.
Abstract:
Provided are a method for affixing a protective film, a method for manufacturing a semiconductor component, and a protective film for use in the affixing method, which are capable of suppressing occurrence of a failure caused by a step on a main surface of a semiconductor wafer. The affixing method includes: an arrangement step of arranging a protective film so as to cover a main surface A of a semiconductor wafer; and an affixing step of pressing the protective film against the main surface to affix the protective film to the main surface. The affixing step includes a compression step of compressing the protective film in a thickness direction thereof.
Abstract:
Provided is a method of peeling an electronic member from a laminate composed of the electronic member adhered to a supporting substrate via an adhesive film having a self-peeling adhesive layer in a defined location and having an exposed region A. The method includes the steps of: reducing adhesive strength between the supporting substrate and the self-peeling adhesive layer in the region A by applying energy on the region A; removing the supporting substrate from the laminate by further applying energy on the region and thus further reducing the adhesive strength reduced in the prior step between the supporting substrate and the self-peeling adhesive layer from a starting point of the interface between the supporting substrate and the self-peeling adhesive layer; and peeling the electronic member from the laminate by removing the adhesive film from the electronic member.
Abstract:
According to the present invention, there is provided a semiconductor wafer protective film including a substrate layer (A) and an adhesive layer (C) formed on the substrate layer (A), in which the substrate layer (A) includes polymer, and a solubility parameter of the polymer determined by a Van Krevelen method is equal to or greater than 9.
Abstract:
Described is an affixing apparatus capable of flattening a surface of a film affixed to a main surface of a plate-shaped body. An affixing apparatus for affixing the film to the plate-shaped body includes: a plate-shaped mounting member provided with a mounting portion on which the plate-shaped body is mounted; a plate-shaped pressing member installed at a position facing the mounting member; and a support member installed at an outer edge of the mounting portion so as to be positioned between the mounting member and the pressing member.
Abstract:
Provided is a method of producing an electronic device, including a step of preparing a structure which includes an electronic component having a circuit forming surface, and an adhesive laminated film which includes a base material layer, an unevenness-absorptive resin layer, and an adhesive resin layer in this order and in which the adhesive resin layer is attached to the circuit forming surface of the electronic component such that the circuit forming surface is protected; and a step of forming an electromagnetic wave-shielding layer on the electronic component in a state of being attached to the adhesive laminated film.
Abstract:
This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G′bmin of the storage elastic modulus G′b in the range of 25° C. to less than 250° C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G′b250 at 250° C. of 0.005 MPa or above, and a temperature at which G′bmin is exhibited of 50-150° C. The adhesive surface layer C has a minimum value G′cmin of the storage elastic modulus G′c in the range of 25° C. to less than 250° C. of 0.03 MPa.
Abstract:
An adhesive film of the present invention includes a base material layer and a self-peeling adhesive layer laminated therein. The base material layer has a thermal contraction percentage in a direction of flow (thermal contraction percentage in an MD direction) and a thermal contraction percentage in an orthogonal direction with respect to the direction of flow (thermal contraction percentage in a TD direction) that satisfy the following conditions: (1) after heating at 150° C. for 30 minutes, 0.4≦|thermal contraction percentage in MD direction/thermal contraction percentage in TD direction|≦2.5 and average of thermal contraction percentage in MD direction and thermal contraction percentage in TD direction≦2%, and (2) after heating at 200° C. for 10 minutes, 0.4≦|thermal contraction percentage in MD direction/thermal contraction percentage in TD direction|≦2.5 and average of thermal contraction percentage in MD direction and thermal contraction percentage in TD direction≧3%.