公开(公告)号：US20020180050A1

公开(公告)日：2002-12-05

申请号：US09870589

申请日：2001-06-01

Applicant: MOTOROLA, INC.

Inventor： Barbara M. Foley ,  Duane C. Rabe ,  Kevin B. Traylor ,  Timothy Joe Johnson

IPC: H01L023/48 ,  H01L023/52 ,  H01L029/40

CPC classification number: H01L27/0605 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A device structure for interacting with optical storage media is formed overlying the monocrystalline substrate. Portions or an entirety of the device structure can also overly the accomodating buffer layer, or the monocrystalline material layer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 用于与光学存储介质相互作用的器件结构形成在单晶衬底上。 部分或整个器件结构也可以过度地覆盖住容纳缓冲层或单晶材料层。

公开(公告)号：US20020179926A1

公开(公告)日：2002-12-05

申请号：US09870592

申请日：2001-06-01

Applicant: MOTOROLA, INC.

Inventor： Barbara M. Foley ,  Duane C. Rabe ,  Kevin B. Traylor ,  Timothy Joe Johnson

IPC: H01L029/74

CPC classification number: G11B5/3103 ,  G11B5/10 ,  G11B11/10534 ,  G11B33/12 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A device structure for interacting with magnetic storage media is formed overlying the monocrystalline substrate. Portions or an entirety of the device structure can also overly the accomodating buffer layer, or the monocrystalline material layer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 在单晶衬底上形成用于与磁存储介质相互作用的器件结构。 部分或整个器件结构也可以过度地覆盖住容纳缓冲层或单晶材料层。

公开(公告)号：US20020181915A1

公开(公告)日：2002-12-05

申请号：US09870833

申请日：2001-06-01

Applicant: MOTOROLA, INC.

Inventor： Ronald A. Craig ,  James S. Irwin ,  Barbara M. Foley

IPC: G02B006/10 ,  G02B006/12

CPC classification number: H03B17/00 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01S5/0261 ,  H01S5/0427

Abstract: An apparatus for generating an oscillating reference signal at a reference frequency includes: (a) a light conveying element having a first end and a second end; the light conveying element conveying substantially all light received or reflected at one end to the other end; the light conveying element having a light transmission path intermediate the first end and the second end; the transmission path being related to the reference frequency; (b) a light transmitting element oriented to introduce light into the light conveying element at one end of the light conveying element; and (c) a light receiving element oriented to receive the transmitted light at one end of the light conveying element. The light conveying element, the light transmitting element and the light receiving element are implemented in a monolithic structure arranged on a single substrate.

Abstract translation: 用于产生参考频率的振荡参考信号的装置包括：（a）具有第一端和第二端的光传输元件; 所述光传送元件基本上将在一端接收或反射的所有光传送到另一端; 光传输元件具有在第一端和第二端之间的光传输路径; 所述传输路径与所述参考频率相关; （b）光传输元件，其定向成将光引入光传输元件的一端; 以及（c）光接收元件，其定向成在所述光输送元件的一端处接收透射光。 光输送元件，透光元件和光接收元件以布置在单个基板上的整体结构来实现。