公开(公告)号：US20030012965A1

公开(公告)日：2003-01-16

申请号：US09901109

申请日：2001-07-10

Applicant: MOTOROLA, INC.

Inventor： Ravindranath Droopad ,  Scott T. Massie

IPC: B32B009/00

CPC classification number: H01L21/02521 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  Y10T428/265

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer is lattice matched to the overlying monocrystalline material layer. In addition, formation of a compliant substrate may include utilizing a monocrystalline oxygen-doped material layer. The monocrystalline oxygen-doped material layer may prevent contamination of the accommodating buffer layer and may facilitate isolation of devices formed in the overlying monocrystalline material. Further, the monocrystalline oxygen-doped materials may be highly resistive and could reduce or eliminate backgating and sidegating effects.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层与上覆单晶材料层晶格匹配。 此外，顺应性衬底的形成可以包括利用单晶氧掺杂材料层。 单晶氧掺杂材料层可以防止容纳缓冲层的污染，并且可以促进在上层单晶材料中形成的器件的隔离。 此外，单晶氧掺杂材料可以是高电阻性的并且可以减少或消除背部和侧面效应。

公开(公告)号：US20020195057A1

公开(公告)日：2002-12-26

申请号：US09884981

申请日：2001-06-21

Applicant: MOTOROLA, INC.

Inventor： Ravindranath Droopad ,  Scott T. Massie

IPC: C23C016/00 ,  C23F001/00 ,  C30B025/00

CPC classification number: C30B23/02 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406

Abstract: An apparatus for forming a semiconductor structure is provided. The apparatus includes a chamber and a plurality of first material sources positioned at least partially within the chamber. The plurality of first material sources are configured to provide materials for the formation of a monocrystalline accommodating buffer layer on a substrate. The plurality of first material sources includes an oxygen source. At least one second material source is also positioned at least partially within the chamber and is configured to provide material for the formation of a monocrystalline oxygen-doped material layer overlying the monocrystalline accommodating buffer layer. The apparatus also includes an oxygen-adjustment mechanism configured to adjust the partial pressure of oxygen in the chamber.

Abstract translation: 提供一种用于形成半导体结构的装置。 该装置包括腔室和至少部分地定位在腔室内的多个第一材料源。 多个第一材料源被配置为提供用于在衬底上形成单晶容纳缓冲层的材料。 多个第一材料源包括氧源。 至少一个第二材料源还至少部分地定位在室内，并且被配置为提供用于形成覆盖单晶容纳缓冲层的单晶氧掺杂材料层的材料。 该装置还包括配置成调节室中的氧分压的氧气调节机构。