公开(公告)号：US3698948A

公开(公告)日：1972-10-17

申请号：US3698948D

申请日：1968-07-26

Applicant: MOTOROLA INC

Inventor： BARONE FRANK J ,  TOLLIVER DONALD L

IPC: H01L21/28 ,  H01L21/316 ,  H01L29/00 ,  H01L29/06 ,  H01L7/00 ,  C23C11/08

CPC classification number: H01L29/0638 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02307 ,  H01L21/28 ,  H01L21/31612 ,  H01L29/00 ,  Y10S438/91 ,  Y10S438/974

Abstract: IN THE FABRICATION OF A SEMICONDUCTOR DEVICE HAVING A SILICON-SILICON DIOXIDE INTERFACE, THE POLARITY OF THE SPACE CHARGE REGION ASSOCIATED WITH THE INTERFACE IS PREDETERMINED BY A METHOD WHICH BEGINS WITH THE STEP OF PRETREATING THE SILICON SURFACE WITH A SELECTED REAGENT CAPABLE OF INDUCING THE DESIRED SPACE CHARGE POLARITY. FOR EXAMPLE, A PRETREATMENT WITH CHROMIC ACID INDUCES A NEGATIVE SPACE CHARGE REGION, WHEREAS A PRETREATMENT WITH NITRIC ACID INDUCES A POSITIVE CHARGE. THE INTERFACE IS THEN FORMED BY VAPOR DEPOSITION OF A SLICON DIOXIDE LAYER ON THE SILICON SURFACE. THE PRETREATMENT HAS BEEN FOUND CAPABLE OF INDUCING A PREDETERMINED CHARGE WHEN THE INTERFACE IS PROVIDED BY VAPOR DEPOSITION, BUT IS WHOLLY INEFFECTIVE WHEN THE INTERFACE IS PROVIDED BY THERMAL OXIDATION. IT IS WELL KNOWN THAT THERMAL OXIDATION OF A SILICON SURFACE INHERENTLY PRODUCES AN INTERFACE HAVING A POSITIVE SPACE CHARGE REGION.