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公开(公告)号：US20160300616A1
公开(公告)日：2016-10-13
申请号：US15189046
申请日：2016-06-22
Applicant: Macronix International Co., Ltd.
Inventor： Kuen-Long Chang , Nai-Ping Kuo , Ken-Hui Chen , Chao-Hsin Lin
CPC classification number: G11C16/10 , G11C16/26 , G11C16/30 , G11C16/34 , G11C16/3418
Abstract: A method, an electronic device and a controller for recovering an array of memory cells are provided. The method comprises the following steps. Whether a recovery control signal is received or not is determined. A retention checking procedure is executed for identifying whether a threshold voltage distribution of at least one bit of the memory cells in high threshold state is shifted or not, if the recovery control signal is received. A retention writing procedure is executed on the memory cells, if the memory cells in high threshold state do not pass the retention checking procedure.
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Patent Agency Ranking
公开(公告)号：US09417640B2
公开(公告)日：2016-08-16
申请号：US14274237
申请日：2014-05-09
Applicant: Macronix International Co., Ltd.
Inventor： Kuen-Long Chang , Ken-Hui Chen , Chin-Hung Chang , Chao-Hsin Lin
Abstract: An integrated circuit device includes a pad adapted to receive a signal from an external driver. A state register is programmed with a state that indicates a voltage level to set for the pad during initialization of circuitry on the integrated circuit device responsive to the state for the pad. The voltage level may correspond to a logic low level or a logic high level. A voltage holding circuit is coupled to the pad and the state register, and is configured to force the pad to the voltage level in response to an event that causes the initialization.
Abstract translation: 集成电路器件包括适于从外部驱动器接收信号的焊盘。 状态寄存器被编程为响应于该焊盘的状态而指示在集成电路器件的电路初始化期间为焊盘设置的电压电平的状态。 电压电平可以对应于逻辑低电平或逻辑高电平。 电压保持电路耦合到焊盘和状态寄存器，并且被配置为响应于引起初始化的事件而迫使焊盘达到电压电平。
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3.发明授权公开(公告)号：US09396806B2
公开(公告)日：2016-07-19
申请号：US14182314
申请日：2014-02-18
Applicant: Macronix International Co., Ltd.
Inventor： Kuen-Long Chang , Nai-Ping Kuo , Ken-Hui Chen , Chao-Hsin Lin
CPC classification number: G11C16/10 , G11C16/26 , G11C16/30 , G11C16/34 , G11C16/3418
Abstract: A method, an electronic device and a controller for recovering an array of memory cells are provided. The method comprises the following steps. Whether a recovery control signal is received or not is determined. A retention checking procedure is executed for identifying whether a threshold voltage distribution of at least one bit of the memory cells in high threshold state is shifted or not, if the recovery control signal is received. A retention writing procedure is executed on the memory cells, if the memory cells in high threshold state do not pass the retention checking procedure.
Abstract translation: 提供了一种用于恢复存储器单元阵列的方法，电子设备和控制器。 该方法包括以下步骤。 确定是否接收到恢复控制信号。 如果接收到恢复控制信号，则执行保持检查程序，用于识别高阈值状态下的存储器单元的至少一位的阈值电压分布是否移位。 如果高阈值状态的存储单元不通过保留检查程序，则在存储器单元上执行保留写入过程。
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4.发明申请METHOD, ELECTRONIC DEVICE AND CONTROLLER FOR RECOVERING ARRAY OF MEMORY CELLS 有权用于恢复记忆体阵列的方法，电子装置和控制器公开(公告)号：US20150143171A1
公开(公告)日：2015-05-21
申请号：US14182314
申请日：2014-02-18
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor： Kuen-Long Chang , Nai-Ping Kuo , Ken-Hui Chen , Chao-Hsin Lin
IPC: G06F11/14
CPC classification number: G11C16/10 , G11C16/26 , G11C16/30 , G11C16/34 , G11C16/3418
Abstract: A method, an electronic device and a controller for recovering an array of memory cells are provided. The method comprises the following steps. Whether a recovery control signal is received or not is determined. A retention checking procedure is executed for identifying whether a threshold voltage distribution of at least one bit of the memory cells in high threshold state is shifted or not, if the recovery control signal is received. A retention writing procedure is executed on the memory cells, if the memory cells in high threshold state do not pass the retention checking procedure.
Abstract translation: 提供了一种用于恢复存储器单元阵列的方法，电子设备和控制器。 该方法包括以下步骤。 确定是否接收到恢复控制信号。 如果接收到恢复控制信号，则执行保持检查程序，用于识别高阈值状态下的存储器单元的至少一位的阈值电压分布是否移位。 如果高阈值状态的存储单元不通过保留检查程序，则在存储器单元上执行保留写入过程。
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公开(公告)号：US20150323946A1
公开(公告)日：2015-11-12
申请号：US14274237
申请日：2014-05-09
Applicant: Macronix International Co., Ltd.
Inventor： Kuen-Long Chang , Ken-Hui Chen , Chin-Hung Chang , Chao-Hsin Lin
IPC: G05F1/46
Abstract: An integrated circuit device includes a pad adapted to receive a signal from an external driver. A state register is programmed with a state that indicates a voltage level to set for the pad during initialization of circuitry on the integrated circuit device responsive to the state for the pad. The voltage level may correspond to a logic low level or a logic high level. A voltage holding circuit is coupled to the pad and the state register, and is configured to force the pad to the voltage level in response to an event that causes the initialization.
Abstract translation: 集成电路器件包括适于从外部驱动器接收信号的焊盘。 状态寄存器被编程为响应于该焊盘的状态而指示在集成电路器件的电路初始化期间为焊盘设置的电压电平的状态。 电压电平可以对应于逻辑低电平或逻辑高电平。 电压保持电路耦合到焊盘和状态寄存器，并且被配置为响应于引起初始化的事件而迫使焊盘达到电压电平。
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公开(公告)号：US09679656B2
公开(公告)日：2017-06-13
申请号：US15189046
申请日：2016-06-22
Applicant: Macronix International Co., Ltd.
Inventor： Kuen-Long Chang , Nai-Ping Kuo , Ken-Hui Chen , Chao-Hsin Lin
CPC classification number: G11C16/10 , G11C16/26 , G11C16/30 , G11C16/34 , G11C16/3418
Abstract: A method, an electronic device and a controller for recovering an array of memory cells are provided. The method comprises the following steps. Whether a recovery control signal is received or not is determined. A retention checking procedure is executed for identifying whether a threshold voltage distribution of at least one bit of the memory cells in high threshold state is shifted or not, if the recovery control signal is received. A retention writing procedure is executed on the memory cells, if the memory cells in high threshold state do not pass the retention checking procedure.
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