PRE OR POST-IMPLANT PLASMA TREATMENT FOR PLASMA IMMERSED ION IMPLANTATION PROCESS
    1.
    发明申请
    PRE OR POST-IMPLANT PLASMA TREATMENT FOR PLASMA IMMERSED ION IMPLANTATION PROCESS 审中-公开
    用于等离子体离子植入过程的预处理或后植入等离子体处理

    公开(公告)号:US20120302048A1

    公开(公告)日:2012-11-29

    申请号:US13461476

    申请日:2012-05-01

    IPC分类号: H01L21/265

    摘要: Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, flowing a gas mixture including a hydride dopant gas and a fluorine-containing dopant gas into the processing chamber, wherein the hydride dopant gas comprises P-type hydride dopant gas, N-type hydride dopant gas, or a combination thereof, and the fluorine-containing dopant gas comprises a P-type or N-type dopant atom, generating a plasma from the gas mixture, and co-implanting ions from the gas mixture into a surface of the substrate.

    摘要翻译: 提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。 在一个实施例中,通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中,将包括氢化物掺杂剂气体和含氟掺杂剂气体的气体混合物流入处理室,其中 氢化物掺杂剂气体包括P型氢化物掺杂气体,N型氢化物掺杂气体或其组合,并且含氟掺杂剂气体包括P型或N型掺杂剂原子,从气体混合物产生等离子体 并且将来自气体混合物的离子共注入到衬底的表面中。

    SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS
    5.
    发明申请
    SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS 审中-公开
    低能量,高剂量阿森斯,磷和硼氢氧化物的安全处理

    公开(公告)号:US20100173484A1

    公开(公告)日:2010-07-08

    申请号:US12730068

    申请日:2010-03-23

    IPC分类号: H01L21/263

    摘要: A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas.

    摘要翻译: 公开了一种在注入工艺之后防止有毒气体形成的方法。 某些掺杂剂当植入设置在基材上的薄膜时,当暴露于水分时可能发生反应,形成有毒气体和/或可燃气体。 通过将掺杂的膜原位暴露于含氧化合物,浅层注入层堆叠的掺杂剂反应形成掺杂剂氧化物,从而减少潜在的有毒气体和/或可燃气体的形成。 或者,可以在植入膜上原位形成覆盖层以减少有毒气体和/或可燃气体的潜在产生。

    SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS
    8.
    发明申请
    SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS 审中-公开
    低能量,高剂量阿森斯,磷和硼氢氧化物的安全处理

    公开(公告)号:US20080153271A1

    公开(公告)日:2008-06-26

    申请号:US11958541

    申请日:2007-12-18

    IPC分类号: H01L21/425

    摘要: A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas.

    摘要翻译: 公开了一种在注入工艺之后防止有毒气体形成的方法。 某些掺杂剂当植入设置在基材上的薄膜时,当暴露于水分时可能发生反应,形成有毒气体和/或可燃气体。 通过将掺杂的膜原位暴露于含氧化合物,浅层注入层堆叠的掺杂剂反应形成掺杂剂氧化物,从而减少潜在的有毒气体和/或可燃气体的形成。 或者,可以在植入膜上原位形成覆盖层以减少有毒气体和/或可燃气体的潜在产生。

    REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE
    9.
    发明申请
    REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE 有权
    从基板上去除表面掺杂物

    公开(公告)号:US20090162996A1

    公开(公告)日:2009-06-25

    申请号:US11963034

    申请日:2007-12-21

    IPC分类号: H01L21/263

    CPC分类号: H01L21/2254 H01L21/2253

    摘要: A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.

    摘要翻译: 提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。 在一个实施例中,通过表面沉积掺杂剂掺杂衬底,然后形成覆盖层和热扩散驱入。 将反应性蚀刻剂混合物与任选的等离子体提供给处理室,以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。 在另一个实施例中,通过掺杂剂的高能注入来掺杂衬底。 通过与掺杂剂反应形成挥发性化合物,将具有任选等离子体的反应气体混合物提供给处理室,以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。 反应性气体混合物可以在热处理期间提供,或者可以在与热处理温度不同的温度之前或之后提供。 除去挥发性化合物。 如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

    REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE
    10.
    发明申请
    REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE 审中-公开
    从基板上去除表面掺杂物

    公开(公告)号:US20110256691A1

    公开(公告)日:2011-10-20

    申请号:US13168738

    申请日:2011-06-24

    IPC分类号: H01L21/322

    CPC分类号: H01L21/2254 H01L21/2253

    摘要: A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.

    摘要翻译: 提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。 在一个实施例中,通过表面沉积掺杂剂掺杂衬底,然后形成覆盖层和热扩散驱入。 将反应性蚀刻剂混合物与任选的等离子体提供给处理室,以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。 在另一个实施例中,通过掺杂剂的高能注入来掺杂衬底。 通过与掺杂剂反应形成挥发性化合物,将具有任选等离子体的反应气体混合物提供给处理室,以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。 反应性气体混合物可以在热处理期间提供,或者可以在与热处理温度不同的温度之前或之后提供。 除去挥发性化合物。 如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。