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    Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same
    1.
    发明申请
    Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same 审中-公开
    用于半导体器件的清洁用基板的清洗液及使用其的清洗方法

    公开(公告)号：US20050020463A1

    公开(公告)日：2005-01-27

    申请号：US10899304

    申请日：2004-07-27

    申请人： Makoto Ikemoto ,  Yasuhiro Kawase ,  Hitoshi Morinaga

    发明人： Makoto Ikemoto ,  Yasuhiro Kawase ,  Hitoshi Morinaga

    IPC分类号： C11D1/72 ,  C11D3/02 ,  C11D3/20 ,  C11D11/00 ,  C11D1/00

    CPC分类号： C11D3/042 ,  C11D1/72 ,  C11D3/2075 ,  C11D11/0047

    摘要： A cleaning solution for cleaning a substrate for semiconductor devices and a cleaning method using the said cleaning solution, which comprises at least the following components (A), (B) and (C): (A) an ethyleneoxide-type surfactant containing a hydrocarbon group which may have a substituent group except for phenyl, and a polyoxyethylene group in which a ratio (m/n) of a number (m) of carbon atoms contained in the hydrocarbon group to a number (n) of oxyethylene groups contained in the polyoxyethylene group is in the range of 1 to 1.5, the number (m) of carbon atoms is not less than 9, and the number (n) of oxyethylene groups is not less than 7; (B) water; and (C) alkali or an organic acid. The cleaning solution highly clean the surface of the substrate without occurrence of corrosion by removing fine particles and organic contaminants which are adhered onto the surface of the substrate.

    摘要翻译： 一种用于清洁半导体器件用基板的清洗液和使用上述清洗液的清洗方法，其至少包括以下成分（A），（B）和（C）：（A）含有烃的环氧乙烷型表面活性剂 可以具有除苯基以外的取代基的基团，以及其中烃基中所含的（m）个碳原子数（m）与（甲） 聚氧乙烯基的范围为1〜1.5，碳原子数（m）为9以上，氧化乙烯基的数（n）为7以上。 （B）水; 和（C）碱或有机酸。 清洁溶液通过除去附着在基材表面上的细小颗粒和有机污染物，高度清洁基板的表面而不会发生腐蚀。

    Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same
    2.
    发明申请
    Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same 有权
    用于半导体器件的清洁用基板的清洗液及使用其的清洗方法

    公开(公告)号：US20080011321A1

    公开(公告)日：2008-01-17

    申请号：US11898233

    申请日：2007-09-11

    申请人： Makoto Ikemoto ,  Yasuhiro Kawase ,  Hitoshi Morinaga

    发明人： Makoto Ikemoto ,  Yasuhiro Kawase ,  Hitoshi Morinaga

    IPC分类号： B08B6/00 ,  C11D7/32

    CPC分类号： C11D3/042 ,  C11D1/72 ,  C11D3/2075 ,  C11D11/0047

    摘要： A cleaning solution for cleaning a substrate for semiconductor devices and a cleaning method using the said cleaning solution, which comprises at least the following components (A), (B) and (C): (A) an ethyleneoxide-type surfactant containing a hydrocarbon group which may have a substituent group except for phenyl, and a polyoxyethylene group in which a ratio (m/n) of a number (m) of carbon atoms contained in the hydrocarbon group to a number (n) of oxyethylene groups contained in the polyoxyethylene group is in the range of 1 to 1.5, the number (m) of carbon atoms is not less than 9, and the number (n) of oxyethylene groups is not less than 7; (B) water; and (C) alkali or an organic acid. The cleaning solution highly clean the surface of the substrate without occurrence of corrosion by removing fine particles and organic contaminants which are adhered onto the surface of the substrate.

    摘要翻译： 一种用于清洁半导体器件用基板的清洗液和使用上述清洗液的清洗方法，其至少包括以下成分（A），（B）和（C）：（A）含有烃的环氧乙烷型表面活性剂 可以具有除苯基以外的取代基的基团，以及其中烃基中所含的（m）个碳原子数（m）与（甲） 聚氧乙烯基的范围为1〜1.5，碳原子数（m）为9以上，氧化乙烯基的数（n）为7以上。 （B）水; 和（C）碱或有机酸。 清洁溶液通过除去附着在基材表面上的细小颗粒和有机污染物，高度清洁基板的表面而不会发生腐蚀。

    Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same
    3.
    发明授权
    Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same 有权
    用于半导体器件的清洁用基板的清洗液及使用其的清洗方法

    公开(公告)号：US07621281B2

    公开(公告)日：2009-11-24

    申请号：US11898233

    申请日：2007-09-11

    申请人： Makoto Ikemoto ,  Yasuhiro Kawase ,  Hitoshi Morinaga

    发明人： Makoto Ikemoto ,  Yasuhiro Kawase ,  Hitoshi Morinaga

    IPC分类号： C11D7/32

    CPC分类号： C11D3/042 ,  C11D1/72 ,  C11D3/2075 ,  C11D11/0047

    摘要： A cleaning solution for cleaning a substrate for semiconductor devices and a cleaning method using the said cleaning solution, which comprises at least the following components (A), (B) and (C): (A) an ethyleneoxide-type surfactant containing a hydrocarbon group which may have a substituent group except for phenyl, and a polyoxyethylene group in which a ratio (m/n) of a number (m) of carbon atoms contained in the hydrocarbon group to a number (n) of oxyethylene groups contained in the polyoxyethylene group is in the range of 1 to 1.5, the number (m) of carbon atoms is not less than 9, and the number (n) of oxyethylene groups is not less than 7; (B) water; and (C) alkali or an organic acid.

    摘要翻译： 一种用于清洁半导体器件用基板的清洗液和使用上述清洗液的清洗方法，其至少包括以下成分（A），（B）和（C）：（A）含有烃的环氧乙烷型表面活性剂 可以具有除苯基以外的取代基的基团，以及其中烃基中所含的（m）个碳原子数（m）与（甲） 聚氧乙烯基的范围为1〜1.5，碳原子数（m）为9以上，氧化乙烯基的数（n）为7以上。 （B）水; 和（C）碱或有机酸。

    Cleaning solution for substrate for semiconductor device and cleaning method
    4.
    发明授权
    Cleaning solution for substrate for semiconductor device and cleaning method 有权
    半导体器件用基板清洗液及清洗方法

    公开(公告)号：US07541322B2

    公开(公告)日：2009-06-02

    申请号：US11500356

    申请日：2006-08-08

    申请人： Makoto Ikemoto ,  Hitoshi Morinaga

    发明人： Makoto Ikemoto ,  Hitoshi Morinaga

    IPC分类号： C11D7/32

    CPC分类号： C11D3/30 ,  C11D3/2075 ,  C11D3/3409 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/3212

    摘要： To provide a cleaning solution for a substrate for a semiconductor device capable of removing particle contamination, organic contamination and metal contamination at the same time without corroding the substrate surface, and further having good water rinsability and capable of making the substrate surface highly clean in a short time, and a cleaning method.

    摘要翻译： 为了提供一种用于半导体器件的基板的清洗液，该半导体器件能够同时清除颗粒污染物，有机污染物和金属污染物，而不会腐蚀基材表面，并且还具有良好的水漂洗性并且能够使基材表面在 短时间和清洁方法。

    Cleaning solution for substrate for semiconductor device and cleaning method
    5.
    发明申请
    Cleaning solution for substrate for semiconductor device and cleaning method 有权
    半导体器件用基板清洗液及清洗方法

    公开(公告)号：US20060270573A1

    公开(公告)日：2006-11-30

    申请号：US11500356

    申请日：2006-08-08

    申请人： Makoto Ikemoto ,  Hitoshi Morinaga

    发明人： Makoto Ikemoto ,  Hitoshi Morinaga

    IPC分类号： C23G1/00 ,  C23G1/02 ,  C11D7/32 ,  C03C23/00

    CPC分类号： C11D3/30 ,  C11D3/2075 ,  C11D3/3409 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/3212

    摘要： To provide a cleaning solution for a substrate for a semiconductor device capable of removing particle contamination, organic contamination and metal contamination at the same time without corroding the substrate surface, and further having good water rinsability and capable of making the substrate surface highly clean in a short time, and a cleaning method. A cleaning solution for a substrate for a semiconductor device, which comprises an organic acid as component (a), an organic alkaline component as component (b), a surfactant as component (c) and water as component (d) and which has a pH of at least 1.5 and less than 6.5. A method for cleaning a substrate for a semiconductor device, which comprises cleaning a substrate for a semiconductor device having a Cu film and a low dielectric constant insulating film on its surface and having CMP treatment applied thereto, by means of the above cleaning solution for a substrate for a semiconductor device.

    摘要翻译： 为了提供一种用于半导体器件的基板的清洗液，该半导体器件能够同时去除颗粒污染物，有机污染物和金属污染物，而不会腐蚀基材表面，并且还具有良好的水漂洗性并且能够使基材表面在 短时间和清洁方法。 作为组分（a）的有机酸，作为组分（b）的有机碱性组分，作为组分（c）的表面活性剂和组分（d）的水）的半导体器件用基材清洗液，其具有 pH值至少为1.5且小于6.5。 一种清洗半导体装置用基板的方法，其特征在于，在表面清洗具有Cu膜和低介电常数绝缘膜的半导体装置用基板，并对其进行CMP处理，利用上述清洗液 用于半导体器件的衬底。

    Protective Film Structure of Metal Member, Metal Component Employing Protective Film Structure, and Equipment for Producing Semiconductor or Flat-Plate Display Employing Protective Film Structure
    8.
    发明申请
    Protective Film Structure of Metal Member, Metal Component Employing Protective Film Structure, and Equipment for Producing Semiconductor or Flat-Plate Display Employing Protective Film Structure 有权
    金属部件的保护膜结构，使用保护膜结构的金属部件以及使用保护膜结构的半导体或平板显示器的生产设备

    公开(公告)号：US20090142588A1

    公开(公告)日：2009-06-04

    申请号：US11917633

    申请日：2006-06-16

    申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Hitoshi Morinaga ,  Yasuhiro Kawase ,  Masafumi Kitano ,  Fumikazu Mizutani ,  Makoto Ishikawa ,  Yukio Kishi

    发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Hitoshi Morinaga ,  Yasuhiro Kawase ,  Masafumi Kitano ,  Fumikazu Mizutani ,  Makoto Ishikawa ,  Yukio Kishi

    IPC分类号： B32B15/00

    CPC分类号： C23C4/02 ,  C23C8/80 ,  C23C28/00 ,  C23C28/042 ,  C25D11/02 ,  C25D11/04 ,  C25D11/08 ,  C25D11/10 ,  C25D11/16 ,  C25D11/18 ,  Y10T428/26 ,  Y10T428/265 ,  Y10T428/31678

    摘要： Multifunction production equipment enabling a plurality of processes in which deposition of reaction products on the inner wall of the processing chamber of equipment for producing a semiconductor or a flat-plate display, metal contamination due to corrosion of the inner wall, or the like, and fluctuation of the process due to discharged gas are suppressed, and a protective film structure for use therein. On the surface of a metal material, a first coating layer having an oxide coating of 1μ thick or less formed as an underlying layer by direct oxidation of a parent material, and a second coating layer of about 200 μm thick are formed. With such an arrangement, corrosion resistance against irradiation with ions or radicals can be imparted to a second layer protective film, and the effect of a protective layer for preventing corrosion of the surface of parent metal caused by diffusing molecules or ions into the second layer protective film can be imparted to the first layer oxide film. Consequently, contamination of the substrate with metals generated from each metal member and the inner surface of the process chamber is reduced, and stripping of the second layer protective film due to lowering in adhesion of the second layer protective film due to corrosion of the interface between the parent material and the second layer protective film can be suppressed.

    摘要翻译： 多功能生产设备能够实现多个工艺，其中在用于制造半导体或平板显示器的设备的处理室的内壁上沉积反应产物，由于内壁的腐蚀而引起的金属污染等，以及 排出气体的处理的波动被抑制，以及用于其中的保护膜结构。 在金属材料的表面上，形成通过母材直接氧化形成作为下层的1μm厚以下的氧化物被膜的第1被覆层和200μm厚的第2被覆层。 通过这样的布置，可以对第二层保护膜赋予对离子或自由基的照射的耐腐蚀性，以及用于防止母体金属表面由于扩散分子或离子而导致的第二层保护层的腐蚀的保护层的效果 可以将膜施加到第一层氧化物膜。 因此，由金属构件和处理室的内表面产生的金属对衬底的污染减少，并且由于第二层保护膜的粘附性的降低而导致的第二层保护膜的剥离 可以抑制母材和第二层保护膜。