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1.发明授权公开(公告)号：US07541322B2
公开(公告)日：2009-06-02
申请号：US11500356
申请日：2006-08-08
申请人： Makoto Ikemoto , Hitoshi Morinaga
发明人： Makoto Ikemoto , Hitoshi Morinaga
IPC分类号： C11D7/32
CPC分类号： C11D3/30 , C11D3/2075 , C11D3/3409 , C11D11/0047 , H01L21/02074 , H01L21/3212
摘要： To provide a cleaning solution for a substrate for a semiconductor device capable of removing particle contamination, organic contamination and metal contamination at the same time without corroding the substrate surface, and further having good water rinsability and capable of making the substrate surface highly clean in a short time, and a cleaning method.
摘要翻译： 为了提供一种用于半导体器件的基板的清洗液，该半导体器件能够同时清除颗粒污染物，有机污染物和金属污染物，而不会腐蚀基材表面，并且还具有良好的水漂洗性并且能够使基材表面在 短时间和清洁方法。
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2.发明申请Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same 有权用于半导体器件的清洁用基板的清洗液及使用其的清洗方法公开(公告)号：US20080011321A1
公开(公告)日：2008-01-17
申请号：US11898233
申请日：2007-09-11
CPC分类号： C11D3/042 , C11D1/72 , C11D3/2075 , C11D11/0047
摘要： A cleaning solution for cleaning a substrate for semiconductor devices and a cleaning method using the said cleaning solution, which comprises at least the following components (A), (B) and (C): (A) an ethyleneoxide-type surfactant containing a hydrocarbon group which may have a substituent group except for phenyl, and a polyoxyethylene group in which a ratio (m/n) of a number (m) of carbon atoms contained in the hydrocarbon group to a number (n) of oxyethylene groups contained in the polyoxyethylene group is in the range of 1 to 1.5, the number (m) of carbon atoms is not less than 9, and the number (n) of oxyethylene groups is not less than 7; (B) water; and (C) alkali or an organic acid. The cleaning solution highly clean the surface of the substrate without occurrence of corrosion by removing fine particles and organic contaminants which are adhered onto the surface of the substrate.
摘要翻译： 一种用于清洁半导体器件用基板的清洗液和使用上述清洗液的清洗方法，其至少包括以下成分（A），（B）和（C）：（A）含有烃的环氧乙烷型表面活性剂 可以具有除苯基以外的取代基的基团，以及其中烃基中所含的（m）个碳原子数（m）与（甲） 聚氧乙烯基的范围为1〜1.5，碳原子数（m）为9以上，氧化乙烯基的数（n）为7以上。 （B）水; 和（C）碱或有机酸。 清洁溶液通过除去附着在基材表面上的细小颗粒和有机污染物，高度清洁基板的表面而不会发生腐蚀。
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3.发明授权Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same 有权用于半导体器件的清洁用基板的清洗液及使用其的清洗方法公开(公告)号：US07621281B2
公开(公告)日：2009-11-24
申请号：US11898233
申请日：2007-09-11
IPC分类号： C11D7/32
CPC分类号： C11D3/042 , C11D1/72 , C11D3/2075 , C11D11/0047
摘要： A cleaning solution for cleaning a substrate for semiconductor devices and a cleaning method using the said cleaning solution, which comprises at least the following components (A), (B) and (C): (A) an ethyleneoxide-type surfactant containing a hydrocarbon group which may have a substituent group except for phenyl, and a polyoxyethylene group in which a ratio (m/n) of a number (m) of carbon atoms contained in the hydrocarbon group to a number (n) of oxyethylene groups contained in the polyoxyethylene group is in the range of 1 to 1.5, the number (m) of carbon atoms is not less than 9, and the number (n) of oxyethylene groups is not less than 7; (B) water; and (C) alkali or an organic acid.
摘要翻译： 一种用于清洁半导体器件用基板的清洗液和使用上述清洗液的清洗方法，其至少包括以下成分（A），（B）和（C）：（A）含有烃的环氧乙烷型表面活性剂 可以具有除苯基以外的取代基的基团，以及其中烃基中所含的（m）个碳原子数（m）与（甲） 聚氧乙烯基的范围为1〜1.5，碳原子数（m）为9以上，氧化乙烯基的数（n）为7以上。 （B）水; 和（C）碱或有机酸。
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4.发明申请Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same 审中-公开用于半导体器件的清洁用基板的清洗液及使用其的清洗方法公开(公告)号：US20050020463A1
公开(公告)日：2005-01-27
申请号：US10899304
申请日：2004-07-27
CPC分类号： C11D3/042 , C11D1/72 , C11D3/2075 , C11D11/0047
摘要： A cleaning solution for cleaning a substrate for semiconductor devices and a cleaning method using the said cleaning solution, which comprises at least the following components (A), (B) and (C): (A) an ethyleneoxide-type surfactant containing a hydrocarbon group which may have a substituent group except for phenyl, and a polyoxyethylene group in which a ratio (m/n) of a number (m) of carbon atoms contained in the hydrocarbon group to a number (n) of oxyethylene groups contained in the polyoxyethylene group is in the range of 1 to 1.5, the number (m) of carbon atoms is not less than 9, and the number (n) of oxyethylene groups is not less than 7; (B) water; and (C) alkali or an organic acid. The cleaning solution highly clean the surface of the substrate without occurrence of corrosion by removing fine particles and organic contaminants which are adhered onto the surface of the substrate.
摘要翻译： 一种用于清洁半导体器件用基板的清洗液和使用上述清洗液的清洗方法，其至少包括以下成分（A），（B）和（C）：（A）含有烃的环氧乙烷型表面活性剂 可以具有除苯基以外的取代基的基团，以及其中烃基中所含的（m）个碳原子数（m）与（甲） 聚氧乙烯基的范围为1〜1.5，碳原子数（m）为9以上，氧化乙烯基的数（n）为7以上。 （B）水; 和（C）碱或有机酸。 清洁溶液通过除去附着在基材表面上的细小颗粒和有机污染物，高度清洁基板的表面而不会发生腐蚀。
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5.发明申请公开(公告)号：US20060270573A1
公开(公告)日：2006-11-30
申请号：US11500356
申请日：2006-08-08
申请人： Makoto Ikemoto , Hitoshi Morinaga
发明人： Makoto Ikemoto , Hitoshi Morinaga
CPC分类号： C11D3/30 , C11D3/2075 , C11D3/3409 , C11D11/0047 , H01L21/02074 , H01L21/3212
摘要： To provide a cleaning solution for a substrate for a semiconductor device capable of removing particle contamination, organic contamination and metal contamination at the same time without corroding the substrate surface, and further having good water rinsability and capable of making the substrate surface highly clean in a short time, and a cleaning method. A cleaning solution for a substrate for a semiconductor device, which comprises an organic acid as component (a), an organic alkaline component as component (b), a surfactant as component (c) and water as component (d) and which has a pH of at least 1.5 and less than 6.5. A method for cleaning a substrate for a semiconductor device, which comprises cleaning a substrate for a semiconductor device having a Cu film and a low dielectric constant insulating film on its surface and having CMP treatment applied thereto, by means of the above cleaning solution for a substrate for a semiconductor device.
摘要翻译： 为了提供一种用于半导体器件的基板的清洗液，该半导体器件能够同时去除颗粒污染物，有机污染物和金属污染物，而不会腐蚀基材表面，并且还具有良好的水漂洗性并且能够使基材表面在 短时间和清洁方法。 作为组分（a）的有机酸，作为组分（b）的有机碱性组分，作为组分（c）的表面活性剂和组分（d）的水）的半导体器件用基材清洗液，其具有 pH值至少为1.5且小于6.5。 一种清洗半导体装置用基板的方法，其特征在于，在表面清洗具有Cu膜和低介电常数绝缘膜的半导体装置用基板，并对其进行CMP处理，利用上述清洗液 用于半导体器件的衬底。
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公开(公告)号：US20130181159A1
公开(公告)日：2013-07-18
申请号：US13824778
申请日：2011-09-23
CPC分类号： C09K13/00 , C09G1/02 , C09K3/1463 , C11D1/72 , C11D1/722 , C11D1/825 , C11D11/0047 , H01L21/02024 , H01L21/02052
摘要： A surface treatment composition of the present invention contains a first surfactant, a second surfactant, a basic compound, and water. The surface treatment composition has a pH of 8 or more. The second surfactant has a weight-average molecular weight one-half or less that of the first surfactant. The sum of the content of the first surfactant and the content of the second surfactant is 0.00001 to 0.1% by mass.
摘要翻译： 本发明的表面处理组合物含有第一表面活性剂，第二表面活性剂，碱性化合物和水。 表面处理组合物的pH为8以上。 第二表面活性剂的重均分子量为第一表面活性剂的二分之一以下。 第一表面活性剂的含量和第二表面活性剂的含量之和为0.00001〜0.1质量％。
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公开(公告)号：US20130134107A1
公开(公告)日：2013-05-30
申请号：US13581922
申请日：2011-02-23
申请人： Hitoshi Morinaga , Hiroyasu Sugiyama , Naoya Miwa
发明人： Hitoshi Morinaga , Hiroyasu Sugiyama , Naoya Miwa
IPC分类号： B01D37/00
CPC分类号： B01D37/00 , B01D2239/0428 , B01D2239/0618 , B24B57/02
摘要： Disclosed is a filtration method that extends filter life and achieves high filtration efficiency, and also abrasive slurry produced by the method. In this filtration method, deaired solvent is passed through a filter before a non-deaired liquid is filtered by the filter, after which the filter is used for filtering.
摘要翻译： 公开了一种延长过滤器寿命并实现高过滤效率的过滤方法，以及通过该方法生产的磨料浆料。 在这种过滤方法中，在使用过滤器过滤未经过干燥的液体之前，将经过过滤的溶剂通过过滤器，然后过滤。
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8.发明申请SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND METHOD FOR REDUCING MICROROUGHNESS OF SEMICONDUCTOR SURFACE 审中-公开半导体器件制造方法和减少半导体表面微观的方法公开(公告)号：US20120329284A1
公开(公告)日：2012-12-27
申请号：US13601157
申请日：2012-08-31
申请人： Tadahiro Ohmi , Hitoshi Morinaga
发明人： Tadahiro Ohmi , Hitoshi Morinaga
IPC分类号： H01L21/306
CPC分类号： H01L21/02052 , H01L21/02074
摘要： Surface treatment is performed with a liquid, while shielding a semiconductor surface from light. When the method is employed for surface treatment in wet processes such as cleaning, etching and development of the semiconductor surface, increase of surface microroughness can be reduced. Thus, electrical characteristics and yield of the semiconductor device are improved.
摘要翻译： 用液体进行表面处理，同时将半导体表面从光屏蔽。 当在诸如清洁，蚀刻和半导体表面的显影的湿法中使用该方法进行表面处理时，可以降低表面微粗糙度的增加。 因此，提高了半导体器件的电特性和产量。
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9.发明授权Method for producing boehmite particles and method for producing alumina particles 有权勃姆石颗粒的制造方法和氧化铝粒子的制造方法公开(公告)号：US08226924B2
公开(公告)日：2012-07-24
申请号：US12542852
申请日：2009-08-18
申请人： Hitoshi Morinaga , Muneaki Tahara , Keiji Ashitaka
发明人： Hitoshi Morinaga , Muneaki Tahara , Keiji Ashitaka
IPC分类号： C01F7/02
CPC分类号： C01F7/448 , C01F7/02 , C01P2004/30 , C01P2004/38 , C01P2004/39 , C01P2004/54 , C01P2004/61 , C01P2004/62 , C09K3/1409
摘要： A method for producing boehmite particles includes subjecting powder of aluminum hydroxide to hydrothermal reaction together with a nucleation agent, thereby obtaining boehmite particles having an average primary particle size of 0.6 μm or less and including primary particles each having a hexahedral shape. A method for producing alumina particles includes: drying the boehmite particles produced by the above described method; calcining the boehmite particles, which have been dried, to obtain alumina particles; and disintegrating the obtained alumina particles.
摘要翻译： 勃姆石粒子的制造方法包括将氢氧化铝粉末与成核剂一起进行水热反应，得到平均一次粒径为0.6μm以下的勃姆石粒子，并且包含各自具有六面体形状的一次粒子。 一种生产氧化铝颗粒的方法包括：干燥由上述方法生产的勃姆石颗粒; 煅烧已经干燥的勃姆石颗粒，得到氧化铝颗粒; 并使得到的氧化铝颗粒分解。
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10.发明申请公开(公告)号：US20100003821A1
公开(公告)日：2010-01-07
申请号：US12496314
申请日：2009-07-01
IPC分类号： H01L21/306 , C09K13/00 , C08L29/04 , C08L39/06
CPC分类号： C09G1/02 , H01L21/02024 , H01L21/02052
摘要： To provide a wetting agent for semiconductors and a polishing composition whereby the wettability of a semiconductor substrate surface can be improved, and microdefects such as particle attachments can be remarkably reduced.A wetting agent for semiconductors, comprising a water soluble polymer compound having a low viscosity and water, and a polishing composition. A 0.3 wt % aqueous solution of the water soluble polymer compound has a viscosity of less than 10 mPa·s at 25° C.
摘要翻译： 为了提供用于半导体的润湿剂和可以提高半导体衬底表面的润湿性的抛光组合物，并且可以显着降低诸如颗粒附着物的微缺陷。 一种用于半导体的润湿剂，其包含具有低粘度和水的水溶性聚合物化合物和抛光组合物。 水溶性聚合物化合物的0.3重量％水溶液在25℃下的粘度小于10mPa.s
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