公开(公告)号：US20050020463A1

公开(公告)日：2005-01-27

申请号：US10899304

申请日：2004-07-27

申请人： Makoto Ikemoto ,  Yasuhiro Kawase ,  Hitoshi Morinaga

发明人： Makoto Ikemoto ,  Yasuhiro Kawase ,  Hitoshi Morinaga

IPC分类号： C11D1/72 ,  C11D3/02 ,  C11D3/20 ,  C11D11/00 ,  C11D1/00

CPC分类号： C11D3/042 ,  C11D1/72 ,  C11D3/2075 ,  C11D11/0047

摘要： A cleaning solution for cleaning a substrate for semiconductor devices and a cleaning method using the said cleaning solution, which comprises at least the following components (A), (B) and (C): (A) an ethyleneoxide-type surfactant containing a hydrocarbon group which may have a substituent group except for phenyl, and a polyoxyethylene group in which a ratio (m/n) of a number (m) of carbon atoms contained in the hydrocarbon group to a number (n) of oxyethylene groups contained in the polyoxyethylene group is in the range of 1 to 1.5, the number (m) of carbon atoms is not less than 9, and the number (n) of oxyethylene groups is not less than 7; (B) water; and (C) alkali or an organic acid. The cleaning solution highly clean the surface of the substrate without occurrence of corrosion by removing fine particles and organic contaminants which are adhered onto the surface of the substrate.

摘要翻译： 一种用于清洁半导体器件用基板的清洗液和使用上述清洗液的清洗方法，其至少包括以下成分（A），（B）和（C）：（A）含有烃的环氧乙烷型表面活性剂 可以具有除苯基以外的取代基的基团，以及其中烃基中所含的（m）个碳原子数（m）与（甲） 聚氧乙烯基的范围为1〜1.5，碳原子数（m）为9以上，氧化乙烯基的数（n）为7以上。 （B）水; 和（C）碱或有机酸。 清洁溶液通过除去附着在基材表面上的细小颗粒和有机污染物，高度清洁基板的表面而不会发生腐蚀。

公开(公告)号：US07621281B2

公开(公告)日：2009-11-24

申请号：US11898233

申请日：2007-09-11

申请人： Makoto Ikemoto ,  Yasuhiro Kawase ,  Hitoshi Morinaga

发明人： Makoto Ikemoto ,  Yasuhiro Kawase ,  Hitoshi Morinaga

IPC分类号： C11D7/32

CPC分类号： C11D3/042 ,  C11D1/72 ,  C11D3/2075 ,  C11D11/0047

摘要： A cleaning solution for cleaning a substrate for semiconductor devices and a cleaning method using the said cleaning solution, which comprises at least the following components (A), (B) and (C): (A) an ethyleneoxide-type surfactant containing a hydrocarbon group which may have a substituent group except for phenyl, and a polyoxyethylene group in which a ratio (m/n) of a number (m) of carbon atoms contained in the hydrocarbon group to a number (n) of oxyethylene groups contained in the polyoxyethylene group is in the range of 1 to 1.5, the number (m) of carbon atoms is not less than 9, and the number (n) of oxyethylene groups is not less than 7; (B) water; and (C) alkali or an organic acid.

摘要翻译： 一种用于清洁半导体器件用基板的清洗液和使用上述清洗液的清洗方法，其至少包括以下成分（A），（B）和（C）：（A）含有烃的环氧乙烷型表面活性剂 可以具有除苯基以外的取代基的基团，以及其中烃基中所含的（m）个碳原子数（m）与（甲） 聚氧乙烯基的范围为1〜1.5，碳原子数（m）为9以上，氧化乙烯基的数（n）为7以上。 （B）水; 和（C）碱或有机酸。

公开(公告)号：US20080011321A1

公开(公告)日：2008-01-17

申请号：US11898233

申请日：2007-09-11

申请人： Makoto Ikemoto ,  Yasuhiro Kawase ,  Hitoshi Morinaga

发明人： Makoto Ikemoto ,  Yasuhiro Kawase ,  Hitoshi Morinaga

IPC分类号： B08B6/00 ,  C11D7/32

CPC分类号： C11D3/042 ,  C11D1/72 ,  C11D3/2075 ,  C11D11/0047

摘要： A cleaning solution for cleaning a substrate for semiconductor devices and a cleaning method using the said cleaning solution, which comprises at least the following components (A), (B) and (C): (A) an ethyleneoxide-type surfactant containing a hydrocarbon group which may have a substituent group except for phenyl, and a polyoxyethylene group in which a ratio (m/n) of a number (m) of carbon atoms contained in the hydrocarbon group to a number (n) of oxyethylene groups contained in the polyoxyethylene group is in the range of 1 to 1.5, the number (m) of carbon atoms is not less than 9, and the number (n) of oxyethylene groups is not less than 7; (B) water; and (C) alkali or an organic acid. The cleaning solution highly clean the surface of the substrate without occurrence of corrosion by removing fine particles and organic contaminants which are adhered onto the surface of the substrate.

摘要翻译： 一种用于清洁半导体器件用基板的清洗液和使用上述清洗液的清洗方法，其至少包括以下成分（A），（B）和（C）：（A）含有烃的环氧乙烷型表面活性剂 可以具有除苯基以外的取代基的基团，以及其中烃基中所含的（m）个碳原子数（m）与（甲） 聚氧乙烯基的范围为1〜1.5，碳原子数（m）为9以上，氧化乙烯基的数（n）为7以上。 （B）水; 和（C）碱或有机酸。 清洁溶液通过除去附着在基材表面上的细小颗粒和有机污染物，高度清洁基板的表面而不会发生腐蚀。

公开(公告)号：US07541322B2

公开(公告)日：2009-06-02

申请号：US11500356

申请日：2006-08-08

申请人： Makoto Ikemoto ,  Hitoshi Morinaga

发明人： Makoto Ikemoto ,  Hitoshi Morinaga

IPC分类号： C11D7/32

CPC分类号： C11D3/30 ,  C11D3/2075 ,  C11D3/3409 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/3212

摘要： To provide a cleaning solution for a substrate for a semiconductor device capable of removing particle contamination, organic contamination and metal contamination at the same time without corroding the substrate surface, and further having good water rinsability and capable of making the substrate surface highly clean in a short time, and a cleaning method.

摘要翻译： 为了提供一种用于半导体器件的基板的清洗液，该半导体器件能够同时清除颗粒污染物，有机污染物和金属污染物，而不会腐蚀基材表面，并且还具有良好的水漂洗性并且能够使基材表面在 短时间和清洁方法。

公开(公告)号：US20060270573A1

公开(公告)日：2006-11-30

申请号：US11500356

申请日：2006-08-08

申请人： Makoto Ikemoto ,  Hitoshi Morinaga

发明人： Makoto Ikemoto ,  Hitoshi Morinaga

IPC分类号： C23G1/00 ,  C23G1/02 ,  C11D7/32 ,  C03C23/00

CPC分类号： C11D3/30 ,  C11D3/2075 ,  C11D3/3409 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/3212

摘要： To provide a cleaning solution for a substrate for a semiconductor device capable of removing particle contamination, organic contamination and metal contamination at the same time without corroding the substrate surface, and further having good water rinsability and capable of making the substrate surface highly clean in a short time, and a cleaning method. A cleaning solution for a substrate for a semiconductor device, which comprises an organic acid as component (a), an organic alkaline component as component (b), a surfactant as component (c) and water as component (d) and which has a pH of at least 1.5 and less than 6.5. A method for cleaning a substrate for a semiconductor device, which comprises cleaning a substrate for a semiconductor device having a Cu film and a low dielectric constant insulating film on its surface and having CMP treatment applied thereto, by means of the above cleaning solution for a substrate for a semiconductor device.

摘要翻译： 为了提供一种用于半导体器件的基板的清洗液，该半导体器件能够同时去除颗粒污染物，有机污染物和金属污染物，而不会腐蚀基材表面，并且还具有良好的水漂洗性并且能够使基材表面在 短时间和清洁方法。 作为组分（a）的有机酸，作为组分（b）的有机碱性组分，作为组分（c）的表面活性剂和组分（d）的水）的半导体器件用基材清洗液，其具有 pH值至少为1.5且小于6.5。 一种清洗半导体装置用基板的方法，其特征在于，在表面清洗具有Cu膜和低介电常数绝缘膜的半导体装置用基板，并对其进行CMP处理，利用上述清洗液 用于半导体器件的衬底。

公开(公告)号：US20100167972A1

公开(公告)日：2010-07-01

申请号：US12600545

申请日：2008-05-16

申请人： Yasuhiro Kawase ,  Makoto Ikemoto ,  Atsushi Itou ,  Matoko Ishikawa

发明人： Yasuhiro Kawase ,  Makoto Ikemoto ,  Atsushi Itou ,  Matoko Ishikawa

IPC分类号： C11D3/20

CPC分类号： H01L21/0206 ,  C11D3/2075 ,  C11D11/0047 ,  H01L21/02074

摘要： To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor.A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B): (A) an organic acid (B) a nonionic surfactant having an HLB value of from 5 to less than 13.

摘要翻译： 为了提供一种用于半导体器件用基板的清洗液，其具有除去颗粒，有机污染物，金属污染物以及附着在基板表面上的有机物和金属的复合污染物的能力优异，从而基板表面可以是高度的 清洁，不被腐蚀。 特别是提供一种清洁液，该清洗溶液清洁低介电常数（Low-k）材料的能力优异，其中由于疏水性而容易排斥液体并且其中去除颗粒的能力差。 一种半导体器件用基板用清洗液，其特征在于，含有以下成分（A）和（B）：（A）有机酸（B）HLB值为5〜13以下的非离子性表面活性剂。

公开(公告)号：US08110534B2

公开(公告)日：2012-02-07

申请号：US12600545

申请日：2008-05-16

申请人： Yasuhiro Kawase ,  Makoto Ikemoto ,  Atsushi Itou ,  Makoto Ishikawa

发明人： Yasuhiro Kawase ,  Makoto Ikemoto ,  Atsushi Itou ,  Makoto Ishikawa

IPC分类号： C11D1/66

CPC分类号： H01L21/0206 ,  C11D3/2075 ,  C11D11/0047 ,  H01L21/02074

摘要： To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor.A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B): (A) an organic acid (B) a nonionic surfactant having an HLB value of from 5 to less than 13.

摘要翻译： 为了提供一种用于半导体器件用基板的清洗液，其具有除去颗粒，有机污染物，金属污染物以及附着在基板表面上的有机物和金属的复合污染物的能力优异，从而基板表面可以是高度的 清洁，不被腐蚀。 特别是提供一种清洁液，该清洗溶液清洁低介电常数（Low-k）材料的能力优异，其中由于疏水性而容易排斥液体并且其中去除颗粒的能力差。 一种半导体器件用基板用清洗液，其特征在于，含有以下成分（A）和（B）：（A）有机酸（B）HLB值为5〜13以下的非离子性表面活性剂。

公开(公告)号：US5698362A

公开(公告)日：1997-12-16

申请号：US818894

申请日：1997-03-17

申请人： Mineo Nishi ,  Koji Nakano ,  Makoto Ikemoto ,  Tadashi Kusumoto ,  Yasuhiro Kawase

发明人： Mineo Nishi ,  Koji Nakano ,  Makoto Ikemoto ,  Tadashi Kusumoto ,  Yasuhiro Kawase

IPC分类号： G03F7/004 ,  G03F7/022 ,  G03F7/023 ,  G03C1/61

CPC分类号： G03F7/0226 ,  G03F7/0045 ,  G03F7/022

摘要： A photosensitive resin composition comprising an alkali-soluble resin (A), a compound (B) containing a 1,2-quinonediazide group, and a compound (C) of the following formula (I): ##STR1## wherein each of Ar.sup.1 to Ar.sup.3 which are independent of one another, is an aromatic hydrocarbon group which may be substituted by a halogen atom, a C.sub.1-4 alkyl group or a C.sub.1-4 alkoxy group, and R is a hydrogen atom, a hydroxyl group, a C.sub.1-4 alkyl group or a C.sub.1-4 alkoxy group.

摘要翻译： 包含碱溶性树脂（A），含有1,2-醌二叠氮化物的化合物（B）和下式（I）的化合物（C））的光敏树脂组合物：其中各自 彼此独立的Ar 1〜Ar 3为可被卤素原子，C 1-4烷基或C 1-4烷氧基取代的芳香族烃基，R为氢原子，羟基， C 1-4烷基或C 1-4烷氧基。

公开(公告)号：US5635329A

公开(公告)日：1997-06-03

申请号：US359822

申请日：1994-12-20

申请人： Mineo Nishi ,  Koji Nakano ,  Makoto Ikemoto

发明人： Mineo Nishi ,  Koji Nakano ,  Makoto Ikemoto

IPC分类号： G03F7/023

CPC分类号： G03F7/0236

摘要： A photosensitive resin composition comprising an alkali-soluble resin, a quinonediazide-type photosensitive compound and a solvent, wherein the alkali-soluble resin is a polycondensation product of 1 at least one phenolic compound (A) of the following formula (A) with 2 formaldehyde (a) and at least one carbonyl compound (b) of the following formula (B), in which the mixing ratio of the formaldehyde (a) to the carbonyl compound (b) is within a range of from 1/99 to 99/1 in terms of the molar ratio of (a)/(b), and the alkaline soluble resin has partial structures of the following formula (C), in which the weight ratio of repeating units (.beta.) wherein m is from 1 to 5, to repeating units (.alpha.) wherein m is 0, i.e. the weight ratio of (.beta.)/(.alpha.), is at most 0.25: ##STR1## wherein R.sup.1 is a group of the formula R.sup.2, OR.sup.3, COOR.sup.4 or CH.sub.2 COOR.sup.5, wherein R.sup.2 is a C.sub.1-4 alkyl group, each of R.sup.3, R.sup.4 and R.sup.5 which are independent of one another, is a hydrogen atom or a C.sub.1-4 alkyl group, n is an integer of from 0 to 3, provided that when n is 2 or 3, a plurality of R.sup.1 may be the same or different, each of R.sup.6 and R.sup.7 which are independent of each other, is a hydrogen atom, a C.sub.1-4 lower alkyl group, an aryl group or an aralkyl group, R.sup.8 is the same group as R.sup.1, R.sup.9 is the same group as R.sup.6, R.sup.10 is the same group as R.sup.7, p is the same integer as n, provided that R.sup.6 and R.sup.7, and R.sup.9 and R.sup.10, are not simultaneously hydrogen atoms, and m is an integer of from 0 to 5.

摘要翻译： 一种包含碱溶性树脂，醌二叠氮化物型光敏化合物和溶剂的感光性树脂组合物，其中碱溶性树脂是+ E，crc 1 + EE的缩聚产物，至少一种以下的酚类化合物（A） 式（A）与+ E，crc 2 + EE甲醛（a）和至少一种下式（B）的羰基化合物（b），其中甲醛（a）与羰基化合物（b ）在（a）/（b）的摩尔比为1/99〜99/1的范围内，碱溶性树脂具有下述式（C）的部分结构，其中重量比 重复单元（β），其中m为1至5，重复单元（α），其中m为0，即（β）/（α）的重量比为至多0.25：（A） （C）其中R 1是式R 2，OR 3，COOR 4或CH 2 COOR 5的基团，其中R 2是C 1-4烷基，R 3，R 4和R 5各自彼此独立地 ， 是氢原子或C 1-4烷基，n为0〜3的整数，条件是当n为2或3时，多个R 1可以相同或不同，R 6和R 7各自独立地 是氢原子，C1-4低级烷基，芳基或芳烷基，R8是与R1相同的基团，R9是与R6相同的基团，R10是与R7相同的基团，p 与n相同的整数，条件是R6和R7以及R9和R10不同时为氢原子，m为0-5的整数。