摘要:
A cleaning sheet for cleaning foreign matters away from the interior of the substrate processing equipment is provided. The cleaning sheet includes a cleaning layer having substantially no tackiness and having a tensile modulus of not lower than 0.98 N/mm2 as determined according to JIS K7127. Alternatively, the cleaning sheet includes a cleaning layer having a Vickers hardness of not lower than 10 MPa.
摘要翻译:提供了一种用于清除离开基板处理设备内部的异物的清洁片。 清洁片包括基本上没有粘性并且根据JIS K7127测定的拉伸模量不低于0.98N / mm 2的清洁层。 或者,清洁片包括维氏硬度不低于10MPa的清洁层。
摘要:
A cleaning sheet for cleaning foreign matters away from the interior of the substrate processing equipment is provided. The cleaning sheet includes a cleaning layer having substantially no tackiness and having a tensile modulus of not lower than 0.98 N/mm2 as determined according to JIS K7127. Alternatively, the cleaning sheet includes a cleaning layer having a Vickers hardness of not lower than 10 MPa.
摘要翻译:提供了一种用于清除离开基板处理设备内部的异物的清洁片。 清洁片包括基本上没有粘性并且根据JIS K7127测定的拉伸模量不低于0.98N / mm 2的清洁层。 或者,清洁片包括维氏硬度不低于10MPa的清洁层。
摘要:
A cleaning sheet for cleaning foreign matters away from the interior of the substrate processing equipment is provided. The cleaning sheet includes a cleaning layer having substantially no tackiness and having a tensile modulus of not lower than 0.98 N/mm2 as determined according to JIS K7127. Alternatively, the cleaning sheet includes a cleaning layer having a Vickers hardness of not lower than 10 MPa.
摘要翻译:提供了一种用于清除离开基板处理设备内部的异物的清洁片。 清洁片包括基本上没有粘性并且根据JIS K7127测定的拉伸模量不低于0.98N / mm 2的清洁层。 或者,清洁片包括维氏硬度不低于10MPa的清洁层。
摘要:
A cleaning sheet for cleaning foreign matters away from the interior of the substrate processing equipment is provided. The cleaning sheet includes a cleaning layer having substantially no tackiness and having a tensile modulus of not lower than 0.98 N/mm2 as determined according to JIS K7127. Alternatively, the cleaning sheet includes a cleaning layer having a Vickers hardness of not lower than 10 MPa.
摘要翻译:提供了一种用于清除离开基板处理设备内部的异物的清洁片。 清洁片包括基本上没有粘性并且根据JIS K7127测定的拉伸模量不低于0.98N / mm 2的清洁层。 或者,清洁片包括维氏硬度不低于10MPa的清洁层。
摘要:
The present invention provides a cleaning substrate of a substrate processing equipment, which comprises a cleaning layer comprising a heat resistant resin with a storage modulus (1 Hz) at 20° C. up to 150° C. being 5×107 Pa to 1×109 Pa on at least one face of the substrate; and a polyimide resin suitable as the heat resistant resin for the cleaning layer and usable under circumstances possibly involving the generation of serious disadvantages due to silicone contamination, such as for HDD application and some semiconductor applications.
摘要翻译:本发明提供了一种基板处理设备的清洁基板,其包括在20℃至150℃下具有储能模量(1Hz)的耐热树脂的清洁层,为5×10 7 Pa至1×10 9 Pa 底物的至少一个面; 以及适合用作清洁层的耐热树脂的聚酰亚胺树脂,并且可用于可能涉及由于硅氧烷污染而产生严重缺点的环境,例如用于HDD应用和一些半导体应用。
摘要:
The present invention provides a cleaning substrate of a substrate processing equipment, which comprises a cleaning layer comprising a heat resistant resin with a storage modulus (1 Hz) at 20° C. up to 150° C. being 5×107 Pa to 1×109 Pa on at least one face of the substrate; and a polyimide resin suitable as the heat resistant resin for the cleaning layer and usable under circumstances possibly involving the generation of serious disadvantages due to silicone contamination, such as for HDD application and some semiconductor applications.
摘要:
A cleaning sheet including a cleaning layer which has a microasperity shape having an arithmetic average roughness Ra of 0.05 μm or less and a maximum height Rz of 1.0 μm or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2. The cleaning sheet may be provided on at least one surface of a transfer member so that the transfer member has a cleaning function. When the cleaning sheet or the transfer member having a cleaning function is transferred in a substrate processing apparatus in place of a substrate to be processed therein, the cleaning sheet contacts and cleans a site of the substrate processing apparatus.
摘要:
A cleaning sheet including a cleaning layer which has a microasperity shape having an arithmetic average roughness Ra of 0.05 μm or less and a maximum height Rz of 1.0 μm or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2. The cleaning sheet may be provided on at least one surface of a transfer member so that the transfer member has a cleaning function. When the cleaning sheet or the transfer member having a cleaning function is transferred in a substrate processing apparatus in place of a substrate to be processed therein, the cleaning sheet contacts and cleans a site of the substrate processing apparatus.
摘要:
A cleaning sheet including a cleaning layer which has a microasperity shape having an arithmetic average roughness Ra of 0.05 μm or less and a maximum height Rz of 1.0 μm or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2. The cleaning sheet may be provided on at least one surface of a transfer member so that the transfer member has a cleaning function. When the cleaning sheet or the transfer member having a cleaning function is transferred in a substrate processing apparatus in place of a substrate to be processed therein, the cleaning sheet contacts and cleans a site of the substrate processing apparatus.
摘要:
There are provided a transfer member provided with a cleaning function, which have excellent foreign matter removing performance and transfer performance, and which can remove foreign matters having a predetermined particle diameter with especially high efficiency.The transfer member provided with a cleaning function includes a transfer member and the cleaning layer provided on at least one surface of the transfer member. The cleaning layer has a microasperity shape having an arithmetic average roughness Ra of 0.05 μm or less and a maximum height Rz of 1.0 μm or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2.