公开(公告)号：US20120061805A1

公开(公告)日：2012-03-15

申请号：US13227674

申请日：2011-09-08

Applicant: Yasuhiro AMANO ,  Miki MORITA ,  Yuta KIMURA

Inventor： Yasuhiro AMANO ,  Miki MORITA ,  Yuta KIMURA

IPC: H01L29/06 ,  B32B5/16 ,  B32B7/12 ,  H01L21/78

CPC classification number: H01L21/78 ,  C08K7/00 ,  C09J7/35 ,  C09J9/02 ,  C09J2201/622 ,  C09J2203/326 ,  C09J2205/102 ,  H01L21/67132 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/2939 ,  H01L2224/294 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10T428/25 ,  Y10T428/28 ,  Y10T428/2817 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/00011

Abstract: The present invention provides a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability. The dicing die bond film of the present invention is a dicing die bond film including a dicing film and a thermosetting type die bond film provided thereon, wherein the thermosetting type die bond film contains conductive particles, the volume resistivity of the thermosetting type die bond film is 1×10−6 Ω·cm or more and 1×10−3 Ω·cm or less, and the tensile storage modulus of the thermosetting type die bond film at −20° C. before thermal curing is 0.1 to 10 GPa.

Abstract translation: 本发明提供了几乎不发生剥离带电并且具有良好的粘合性和可加工性的切割模接合膜。 本发明的切割模片接合薄膜是在其上设置有切割膜和热固型模具接合薄膜的切割模片接合薄膜，其中热固型模具接合薄膜包含导电颗粒，热固型模具接合薄膜的体积电阻率 是1×10-6＆OHgr··cm以上，1×10-3＆OHgr··cm以下，热固化前的-20℃下的热固型模具接合膜的拉伸储能模量为0.1〜10 GPa。

公开(公告)号：US20100304092A1

公开(公告)日：2010-12-02

申请号：US12744113

申请日：2009-08-12

Applicant: Yasuhiro Amano ,  Takeshi Matsumura ,  Kouichi Inoue

Inventor： Yasuhiro Amano ,  Takeshi Matsumura ,  Kouichi Inoue

IPC: B32B7/10 ,  B32B37/02 ,  B32B3/00

CPC classification number: H01L24/83 ,  C09J7/22 ,  C09J7/38 ,  C09J2201/28 ,  C09J2203/326 ,  C09J2205/102 ,  H01L21/6836 ,  H01L23/3107 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/27436 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29386 ,  H01L2224/29387 ,  H01L2224/29393 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/30105 ,  H01L2924/3025 ,  Y10T156/10 ,  Y10T428/24612 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05432 ,  H01L2924/0532 ,  H01L2924/04642 ,  H01L2924/05042 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

Abstract: A method of manufacturing a dicing die-bonding film having excellent adhesive properties during a dicing step and excellent peeling properties during a pickup. A method of manufacturing a dicing die-bonding film comprising a pressure-sensitive adhesive layer and an adhesive layer laminated sequentially on a base material, the method including the steps of forming the adhesive layer on a releasing film, the film containing an inorganic filler, having an arithmetic mean roughness Ra of 0.015 to 1 μm, and having an uneven surface and bonding the pressure-sensitive adhesive layer and the adhesive layer provided on the base material under the conditions of a temperature of 30 to 50° C. and a pressure of 0.1 to 0.6 MPa and making the contact area of the pressure-sensitive adhesive layer and the adhesive layer be in the range of 35 to 90% to the bonding area.

Abstract translation: 一种在切割步骤中制造具有优异的粘合性的切割/芯片接合膜的方法以及在拾取期间的优异的剥离性。 一种制造切割芯片接合薄膜的方法，其包括在基材上依次层压的粘合剂层和粘合剂层，所述方法包括以下步骤：在脱模膜上形成粘合层，所述薄膜含有无机填料， 具有0.015〜1μm的算术平均粗糙度Ra，并且具有不平坦的表面，并且在温度为30至50℃的条件下将设置在基材上的压敏粘合剂层和粘合剂层粘合，并且压力 为0.1〜0.6MPa，使粘合剂层和粘合剂层的接触面积达到接合面积的35〜90％的范围。

公开(公告)号：US20100136275A1

公开(公告)日：2010-06-03

申请号：US12629296

申请日：2009-12-02

Applicant: Yasuhiro Amano

Inventor： Yasuhiro Amano

IPC: B32B33/00 ,  B32B38/00

CPC classification number: B32B38/0012 ,  B32B37/12 ,  B32B2038/0028 ,  B32B2307/734 ,  B32B2309/027 ,  B32B2457/14 ,  H01L21/67011 ,  Y10T428/14

Abstract: A present invention relates to a film for manufacturing a semiconductor device in which a cover film is pasted onto a laminated film, wherein the shrinkage in the longitudinal direction and in the lateral direction in the laminated film after peeling the cover film and leaving for 24 hours at a temperature of 23±2° C. is in a range of 0 to 2% compared to the laminated film before pasting of the cover film.

Abstract translation: 本发明涉及一种用于制造半导体器件的膜，其中将覆盖膜粘贴到层压膜上，其中在剥离覆盖膜之后层压膜中的纵向和横向上的收缩并且留置24小时 与贴膜前的层叠膜相比，在23±2℃的温度下为0〜2％的范围。

公开(公告)号：US07611926B2

公开(公告)日：2009-11-03

申请号：US12040775

申请日：2008-02-29

Applicant: Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

Inventor： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

IPC: H01L21/58 ,  H01L23/14

CPC classification number: H01L24/83 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/05599 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/83885 ,  H01L2224/85001 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/0635 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

Abstract: The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.

Abstract translation: 本发明的热固性芯片接合薄膜是用于制造半导体器件的热固性芯片接合薄膜，其以主要成分为5〜15重量％的热塑性树脂成分和45〜55重量％的热硬化性树脂 并且在热固化膜之前，在100℃下具有400Pa.s以上且2500Pa·s以下的熔融粘度。

公开(公告)号：US20090253891A1

公开(公告)日：2009-10-08

申请号：US12484700

申请日：2009-06-15

Applicant: Yoshio TERADA ,  Hirofumi FUJII ,  Makoto NAMIKAWA ,  Daisuke UENDA ,  Yasuhiro AMANO

Inventor： Yoshio TERADA ,  Hirofumi FUJII ,  Makoto NAMIKAWA ,  Daisuke UENDA ,  Yasuhiro AMANO

IPC: C08G69/26

CPC classification number: B32B27/28 ,  B32B27/06 ,  B32B27/34 ,  B32B27/36 ,  B32B2307/31 ,  B32B2307/54 ,  B32B2432/00 ,  Y10T428/28 ,  Y10T428/2896 ,  Y10T428/31504 ,  Y10T428/31721

Abstract: The present invention provides a cleaning substrate of a substrate processing equipment, which comprises a cleaning layer comprising a heat resistant resin with a storage modulus (1 Hz) at 20° C. up to 150° C. being 5×107 Pa to 1×109 Pa on at least one face of the substrate; and a polyimide resin suitable as the heat resistant resin for the cleaning layer and usable under circumstances possibly involving the generation of serious disadvantages due to silicone contamination, such as for HDD application and some semiconductor applications.

Abstract translation: 本发明提供了一种基板处理设备的清洁基板，其包括在20℃至150℃下具有储能模量（1Hz）的耐热树脂的清洁层，为5×10 7 Pa至1×10 9 Pa 底物的至少一个面; 以及适合用作清洁层的耐热树脂的聚酰亚胺树脂，并且可用于可能涉及由于硅氧烷污染而产生严重缺点的环境，例如用于HDD应用和一些半导体应用。

公开(公告)号：US20050244632A1

公开(公告)日：2005-11-03

申请号：US11014779

申请日：2004-12-20

Applicant: Makoto Namikawa ,  Yoshio Terada ,  Jirou Nukaga ,  Eiji Toyoda ,  Hirofumi Fujii ,  Daisuke Uenda ,  Asami Funatsu ,  Nobuaki Maruoka ,  Hitoshi Ishizaka ,  Yasuhiro Amano

Inventor： Makoto Namikawa ,  Yoshio Terada ,  Jirou Nukaga ,  Eiji Toyoda ,  Hirofumi Fujii ,  Daisuke Uenda ,  Asami Funatsu ,  Nobuaki Maruoka ,  Hitoshi Ishizaka ,  Yasuhiro Amano

IPC: B08B7/00 ,  B32B27/06

CPC classification number: B08B1/00 ,  B08B7/00 ,  B08B7/0028 ,  Y10T428/2848 ,  Y10T428/31721

Abstract: A cleaning sheet for cleaning foreign matters away from the interior of the substrate processing equipment is provided. The cleaning sheet includes a cleaning layer having substantially no tackiness and having a tensile modulus of not lower than 0.98 N/mm2 as determined according to JIS K7127. Alternatively, the cleaning sheet includes a cleaning layer having a Vickers hardness of not lower than 10 MPa.

Abstract translation: 提供了一种用于清除离开基板处理设备内部的异物的清洁片。 清洁片包括基本上没有粘性并且根据JIS K7127测定的拉伸模量不低于0.98N / mm 2的清洁层。 或者，清洁片包括维氏硬度不低于10MPa的清洁层。

公开(公告)号：US08475600B2

公开(公告)日：2013-07-02

申请号：US12067235

申请日：2006-10-12

Applicant: Daisuke Uenda ,  Yukio Arimitsu ,  Yoshio Terada ,  Yasuhiro Amano ,  Akihisa Murata

Inventor： Daisuke Uenda ,  Yukio Arimitsu ,  Yoshio Terada ,  Yasuhiro Amano ,  Akihisa Murata

IPC: B08B7/00 ,  B32B3/30 ,  B32B17/10

CPC classification number: B08B1/00 ,  B08B7/0028 ,  H01L21/02096 ,  Y10T428/24355 ,  Y10T428/2457 ,  Y10T428/24612 ,  Y10T428/31

Abstract: A cleaning sheet including a cleaning layer which has a microasperity shape having an arithmetic average roughness Ra of 0.05 μm or less and a maximum height Rz of 1.0 μm or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2. The cleaning sheet may be provided on at least one surface of a transfer member so that the transfer member has a cleaning function. When the cleaning sheet or the transfer member having a cleaning function is transferred in a substrate processing apparatus in place of a substrate to be processed therein, the cleaning sheet contacts and cleans a site of the substrate processing apparatus.

公开(公告)号：US07998552B2

公开(公告)日：2011-08-16

申请号：US12529070

申请日：2008-01-28

Applicant: Yasuhiro Amano ,  Sadahito Misumi ,  Takeshi Matsumura

Inventor： Yasuhiro Amano ,  Sadahito Misumi ,  Takeshi Matsumura

IPC: H01L21/301 ,  H01L21/52

CPC classification number: H01L23/3121 ,  C08G18/4045 ,  C08G18/6254 ,  C08L33/08 ,  C09J175/04 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/27436 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29386 ,  H01L2224/29393 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06572 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/3011 ,  H01L2924/3025 ,  Y10T428/24355 ,  H01L2924/00014 ,  H01L2924/0635 ,  H01L2924/066 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05432 ,  H01L2924/0532 ,  H01L2924/04642 ,  H01L2924/05042 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

Abstract: A dicing die-bonding film in which the adhesive properties during the dicing step and the peeling properties during the pickup step are controlled so that both become good, and a production method thereof, are provided. The dicing die-bonding film in the present invention is a dicing die-bonding film having a pressure-sensitive adhesive layer on a base material and a die bond layer on the pressure-sensitive adhesive layer, in which the arithmetic mean roughness X (μm) on the pressure-sensitive adhesive layer side in the die bond layer is 0.015 μm to 1 μm, the arithmetic mean roughness Y (μm) on the die bond layer side in the pressure-sensitive adhesive layer is 0.03 μm to 1 μm, and the absolute value of the difference of the X and Y is 0.015 or more.

Abstract translation: 控制在切割步骤期间的粘合性能和拾取步骤期间的剥离性能使得两者都变得良好的切割芯片接合膜及其制备方法。 本发明的切割/芯片接合薄膜是在基材上具有压敏粘合剂层和压敏粘合剂层上的芯片接合层的切割芯片接合薄膜，其中算术平均粗糙度X（μm ）为0.015μm〜1μm，压敏粘合剂层的芯片接合层侧的算术平均粗糙度Y（μm）为0.03μm〜1μm， X和Y的差的绝对值为0.015以上。

公开(公告)号：US20110088721A1

公开(公告)日：2011-04-21

申请号：US12977762

申请日：2010-12-23

Applicant: Daisuke Uenda ,  Yukio Arimitsu ,  Yoshio Terada ,  Yasuhiro Amano ,  Akihisa Murata

Inventor： Daisuke Uenda ,  Yukio Arimitsu ,  Yoshio Terada ,  Yasuhiro Amano ,  Akihisa Murata

IPC: B08B1/00

CPC classification number: B08B1/00 ,  B08B7/0028 ,  H01L21/02096 ,  Y10T428/24355 ,  Y10T428/2457 ,  Y10T428/24612 ,  Y10T428/31

Abstract: A cleaning sheet including a cleaning layer which has a microasperity shape having an arithmetic average roughness Ra of 0.05 μm or less and a maximum height Rz of 1.0 μm or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2. The cleaning sheet may be provided on at least one surface of a transfer member so that the transfer member has a cleaning function. When the cleaning sheet or the transfer member having a cleaning function is transferred in a substrate processing apparatus in place of a substrate to be processed therein, the cleaning sheet contacts and cleans a site of the substrate processing apparatus.

Abstract translation: 一种清洁片，包括具有0.05微米以下的算术平均粗糙度Ra和1.0微米或更小的最大高度Rz的微细凹凸形状的清洁层。 优选地，每1mm平坦表面的清洁层的基本表面积为1mm 2的平坦区域的硅晶片镜表面的基本表面积的150％或更多。 清洁片可以设置在转印构件的至少一个表面上，使得转印构件具有清洁功能。 当清洁片或具有清洁功能的转印元件在衬底处理设备中转移以代替待处理衬底时，清洁片接触并清洁衬底处理设备的位置。

公开(公告)号：US20110074050A1

公开(公告)日：2011-03-31

申请号：US12890909

申请日：2010-09-27

Applicant: Yasuhiro Amano ,  Yuuichirou Shishido ,  Kouichi Inoue

Inventor： Yasuhiro Amano ,  Yuuichirou Shishido ,  Kouichi Inoue

IPC: B32B33/00 ,  H01L29/00

CPC classification number: H01L21/67132 ,  Y10T428/14

Abstract: The present invention provides a film for a semiconductor device, which is capable of preventing interface delamination between each of the films, a film lifting phenomenon, and transfer of the adhesive film onto the cover film even during transportation or after long-term storage in a low temperature condition. The film for a semiconductor device of the present invention is a film in which an adhesive film and a cover film are sequentially laminated on a dicing film, in which a peel force F1 between the adhesive film and the cover film in a T type peeling test is within a range of 0.025 to 0.075 N/100 mm, a peel force F2 between the adhesive film and the dicing film is within a range of 0.08 to 10 N/100 mm, and F1 and F2 satisfy a relationship of F1

Abstract translation: 本发明提供一种半导体装置用薄膜，其能够防止各膜之间的界面分层，膜提起现象，以及即使在运输过程中或长期储存后也将胶粘剂膜转印到覆盖膜上 低温条件。 本发明的半导体装置用薄膜是将粘接薄膜和覆盖薄膜依次层叠在切断薄膜上的薄膜，在T型剥离试验中粘合薄膜与覆盖薄膜的剥离力F1 在0.025〜0.075N / 100mm的范围内，粘合膜与切割膜之间的剥离力F2在0.08〜10N / 100mm的范围内，F1和F2满足F1