公开(公告)号：US06344304B1

公开(公告)日：2002-02-05

申请号：US09438416

申请日：1999-11-12

申请人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

发明人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

IPC分类号： G03F7004

CPC分类号： C08K5/375 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111 ,  C08L33/06

摘要： A radiation sensitive composition comprising a copolymer having a structural unit of (me)acrylonitrile and a structural unit generating an alkali soluble group and a substance generating an acid by application of radiation.

摘要翻译： 一种辐射敏感性组合物，其包含具有（me）丙烯腈的结构单元的共聚物和产生碱溶性基团的结构单元和通过施加辐射产生酸的物质。

公开(公告)号：US5968713A

公开(公告)日：1999-10-19

申请号：US896833

申请日：1997-07-18

申请人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

发明人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/30 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

CPC分类号： G03F7/039 ,  G03F7/0045

摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.

公开(公告)号：US5879851A

公开(公告)日：1999-03-09

申请号：US718515

申请日：1996-10-08

申请人： Makoto Takahashi ,  Satoshi Takechi

发明人： Makoto Takahashi ,  Satoshi Takechi

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027 ,  G03C5/18

CPC分类号： G03F7/322

摘要： A method for forming resist patterns comprising coating a resist comprising a polymeric or copolymeric compound having a repeating unit comprising a protected alkali-soluble group in which the protecting group is cleaved with an acid so that the compound is made alkali-soluble, and an acid generator capable of generating an acid upon the radiation exposure to a substrate to be fabricated, then pre-baking the formed resist film, successively selectively exposing the resist film, thereafter, developing a latent image with a developer containing an aqueous or alcoholic solution of a specified ammonium compound or morpholine compound. According to this method, crack formation and peeling of a pattern can be suppressed at the time of forming resist patterns.

摘要翻译： PCT No.PCT / JP96 / 00295 Sec。 371日期1996年10月8日第 102（e）日期1996年10月8日PCT 1996年2月9日PCT PCT。 公开号WO96 / 24888 日期1996年8月15日一种形成抗蚀剂图案的方法，包括涂覆抗蚀剂，该抗蚀剂包括具有重复单元的聚合物或共聚合物，该重复单元包含被保护基团与酸分解的保护的碱溶性基团， 能够在放射线照射到要制造的基板上时产生酸的酸发生剂，然后预先烘烤形成的抗蚀剂膜，依次选择性地暴露抗蚀剂膜，然后用含有水溶液的显影剂显影潜像 或特定的铵化合物或吗啉化合物的醇溶液。 根据该方法，在形成抗蚀剂图案时可以抑制图案的裂纹形成和剥离。

公开(公告)号：US06790589B2

公开(公告)日：2004-09-14

申请号：US10024373

申请日：2001-12-21

申请人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

发明人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

IPC分类号： G03F7004

CPC分类号： C08K5/375 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111 ,  C08L33/06

摘要： A radiation sensitive material comprising a copolymer including itaconic anhydride and methods of using such radiation sensitive materials in methods for forming a pattern.

摘要翻译： 包含包含衣康酸酐的共聚物的辐射敏感材料以及在形成图案的方法中使用这种辐射敏感材料的方法。

公开(公告)号：US06013416A

公开(公告)日：2000-01-11

申请号：US673739

申请日：1996-06-27

申请人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

发明人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/039 ,  G03F7/0045

摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.

摘要翻译： 碱可显影的化学放大抗蚀剂组合物，其包含具有包含受保护的碱溶性基团的结构单元的碱不溶性成膜化合物，其中所述受保护的碱溶性基团的保护部分在酸的作用下被切割 由与所述化合物组合使用的光致酸产生剂产生，从而从碱溶性基团释放保护部分并将所述化合物转化为碱溶性化合物，以及能够在曝光于图案化辐射时分解的光致酸产生剂 产生能够导致所述保护部分裂解的酸。 抗蚀剂组合物特别适合于使用碱性显影剂的准分子激光光刻，并且所形成的抗蚀剂图案可以表现出高灵敏度和优异的耐干蚀刻性而不膨胀。

公开(公告)号：US6004720A

公开(公告)日：1999-12-21

申请号：US999394

申请日：1997-12-29

申请人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

发明人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

IPC分类号： C08K5/375 ,  G03F7/004 ,  G03F7/039 ,  G03C1/492

CPC分类号： C08K5/375 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

摘要： A copolymer expressed by the following structural formula ##STR1## was obtained by loading adamantyl methacrylate monomer and t-butyl acrylate monomer by 1:1, then conducting polymerization, adding AIBN as a polymerization initiator, and then conducting precipitation purification with methanol. Then to the copolymer, triphenylsulfonium hexafluoroantimonate was added to prepare a cyclohexanone solution. This solution was applied to a wafer, and exposed to a KrF excimer stepper and developed. The threshold energy Eth was 50 mJ/cm.sup.2. A 0.45 .mu.m-wide L & S was formed at 130 mJ/cm.sup.2. The radiation sensitive material has good transparency and etching resistance, high sensitivity, and little peeling.

摘要翻译： 通过将甲基丙烯酸金刚烷酯单体和丙烯酸叔丁酯单体以1:1的比例加载，然后进行聚合，加入AIBN作为聚合引发剂，然后用甲醇进行沉淀纯化，得到由以下结构式表示的共聚物。 然后向共聚物中加入三苯基锍六氟锑酸盐以制备环己酮溶液。 将该溶液施加到晶片上，暴露于KrF准分子步进机并显影。 阈值能量Eth为50mJ / cm 2。 以130mJ / cm 2形成0.45μm宽的L＆S。 辐射敏感材料具有良好的透明度和耐蚀刻性，灵敏度高，剥离少。

公开(公告)号：US07465529B2

公开(公告)日：2008-12-16

申请号：US11582426

申请日：2006-10-18

申请人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

发明人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

IPC分类号： G03F7/039 ,  G03F7/34

CPC分类号： C08K5/375 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111 ,  C08L33/06

摘要： A copolymer expressed by the following structural formula was obtained by loading adamantyl methacrylate monomer and t-butyl acrylate monomer by 1:1, then conducting polymerization, adding AIBN as a polymerization initiator, and then conducting precipitation purification with methanol. Then to the copolymer, triphenylsulfonium hexafluoroantimonate was added to prepare a cyclohexanone solution. This solution was applied to a wafer, and exposed to a KrF excimer stepper and developed. The threshold energy Eth was 50 mJ/cm2. A 0.45 μm-wide L & S was formed at 130 mJ/cm2. The radiation sensitive material has good transparency and etching resistance, high sensitivity, and little peeling.

摘要翻译： 通过将甲基丙烯酸金刚烷酯单体和丙烯酸叔丁酯单体以1:1的比例加载，然后进行聚合，加入AIBN作为聚合引发剂，然后用甲醇进行沉淀纯化，得到由以下结构式表示的共聚物。 然后向共聚物中加入三苯基锍六氟锑酸盐以制备环己酮溶液。 将该溶液施加到晶片上，暴露于KrF准分子步进机并显影。 阈值能量Eth为50mJ / cm 2。 在130mJ / cm 2下形成0.45μm的L＆S。 辐射敏感材料具有良好的透明度和耐蚀刻性，灵敏度高，剥离少。

公开(公告)号：US07179580B2

公开(公告)日：2007-02-20

申请号：US10833114

申请日：2004-04-28

申请人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

发明人： Satoshi Takechi ,  Makoto Takahashi ,  Yuko Kaimoto

IPC分类号： G03F7/004 ,  G03C1/492

CPC分类号： C08K5/375 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111 ,  C08L33/06

摘要： A copolymer expressed by the following structural formula was obtained by loading adamantyl methacrylate monomer and t-butyl acrylate monomer by 1:1, then conducting polymerization, adding AIBN as a polymerization initiator, and then conducting precipitation purification with methanol. Then to the copolymer, triphenylsulfonium hexafluoroantimonate was added to prepare a cyclohexanone solution. This solution was applied to a wafer, and exposed to a KrF excimer stepper and developed. The threshold energy Eth was 50 mJ/cm2. A 0.45 μm-wide L & S was formed at 130 mJ/cm2. The radiation sensitive material has good transparency and etching resistance, high sensitivity, and little peeling.

摘要翻译： 通过将甲基丙烯酸金刚烷酯单体和丙烯酸叔丁酯单体以1:1的比例加载，然后进行聚合，加入AIBN作为聚合引发剂，然后用甲醇进行沉淀纯化，得到由以下结构式表示的共聚物。 然后向共聚物中加入三苯基锍六氟锑酸盐以制备环己酮溶液。 将该溶液施加到晶片上，暴露于KrF准分子步进机并显影。 阈值能量Eth为50mJ / cm 2。 在130mJ / cm 2下形成0.45μm的L＆S。 辐射敏感材料具有良好的透明度和耐蚀刻性，灵敏度高，剥离少。

公开(公告)号：US06699645B2

公开(公告)日：2004-03-02

申请号：US08810773

申请日：1997-03-05

申请人： Makoto Takahashi ,  Satoshi Takechi

发明人： Makoto Takahashi ,  Satoshi Takechi

IPC分类号： B03F730

CPC分类号： G03F7/322

摘要： Method for the formation of resist patterns by using a chemically amplified resist which comprises an alkali-insoluble base polymer or copolymer and an acid generator, in which the patternwise exposed film of said resist is developed with an organic alkaline developer in the presence of a surface active agent containing a higher alkyl group in a molecule thereof. The resist patterns have no drawback such as cracks and peeling, and thus can be advantageously used in the production of semiconductor devices such as LSIs and VLSIs.

摘要翻译： 通过使用包含碱不溶性基础聚合物或共聚物和酸产生剂的化学放大抗蚀剂形成抗蚀剂图案的方法，其中所述抗蚀剂的图案曝光膜在表面存在下用有机碱性显影剂显影 其分子中含有较高级烷基的活性剂。 抗蚀剂图案没有诸如裂纹和剥离的缺点，因此可以有利地用于制造诸如LSI和VLSI的半导体器件。

公开(公告)号：US06329125B2

公开(公告)日：2001-12-11

申请号：US09739259

申请日：2000-12-19

申请人： Satoshi Takechi ,  Akiko Kotachi ,  Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Makino ,  Makoto Takahashi

发明人： Satoshi Takechi ,  Akiko Kotachi ,  Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Makino ,  Makoto Takahashi

IPC分类号： G03F7039

CPC分类号： G03F7/039 ,  G03F7/0045

摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition can exhibit a high sensitivity (not more than 5 mJ/cm2) and therefore is particularly suitable for ArF lithography and also can exhibit stable patterning properties.