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    Chemically amplified resist compositions and process for the formation of resist patterns
    2.
    发明授权
    Chemically amplified resist compositions and process for the formation of resist patterns 失效
    化学扩增抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US06013416A

    公开(公告)日：2000-01-11

    申请号：US673739

    申请日：1996-06-27

    申请人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

    发明人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/039 ,  G03F7/0045

    摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.

    摘要翻译： 碱可显影的化学放大抗蚀剂组合物，其包含具有包含受保护的碱溶性基团的结构单元的碱不溶性成膜化合物，其中所述受保护的碱溶性基团的保护部分在酸的作用下被切割 由与所述化合物组合使用的光致酸产生剂产生，从而从碱溶性基团释放保护部分并将所述化合物转化为碱溶性化合物，以及能够在曝光于图案化辐射时分解的光致酸产生剂 产生能够导致所述保护部分裂解的酸。 抗蚀剂组合物特别适合于使用碱性显影剂的准分子激光光刻，并且所形成的抗蚀剂图案可以表现出高灵敏度和优异的耐干蚀刻性而不膨胀。

    Chemically amplified resist compositions and process for the formation of resist patterns
    3.
    发明授权
    Chemically amplified resist compositions and process for the formation of resist patterns 失效
    化学扩增抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US06200725B1

    公开(公告)日：2001-03-13

    申请号：US08969368

    申请日：1997-11-28

    申请人： Satoshi Takechi ,  Akiko Kotachi ,  Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Makino ,  Makoto Takahashi

    发明人： Satoshi Takechi ,  Akiko Kotachi ,  Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Makino ,  Makoto Takahashi

    IPC分类号： G03F7039

    CPC分类号： G03F7/039 ,  G03F7/0045

    摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition can exhibit a high sensitivity (not more than 5 mJ/cm2) and therefore is particularly suitable for ArF lithography and also can exhibit stable patterning properties.

    摘要翻译： 碱可显影的化学增幅抗蚀剂组合物，其包含具有包含受保护的碱溶性基团的结构单元的碱不溶性化合物，其中所述被保护的碱溶性基团的保护部分含有与碳原子键合的脂环族烃基 其中R 1'是甲基，乙基，丙基或异丙​​基，并且所述碱溶性基团在与所述化合物组合使用的光致酸产生剂产生的酸作用下被切割，由此释放所述保护部分 从碱溶性基团中转化为碱溶性化合物，以及光致酸发生剂，其能够在暴露于图案化辐射时分解，从而产生能够导致所述保护部分裂解的酸。 抗蚀剂组合物可以表现出高灵敏度（不大于5mJ / cm 2），因此特别适用于ArF光刻，并且还可呈现稳定的图案化性能。

    Chemical amplification resist compositions and process for the formation of resist patterns
    5.
    发明授权
    Chemical amplification resist compositions and process for the formation of resist patterns 失效
    化学放大抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US06582878B2

    公开(公告)日：2003-06-24

    申请号：US09757476

    申请日：2001-01-11

    申请人： Takahisa Namiki ,  Ei Yano ,  Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu

    发明人： Takahisa Namiki ,  Ei Yano ,  Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/039

    摘要： A novel chemical amplification resist composition which comprises an alkali-soluble base resin, a photoacid generator and a dissolution inhibitor and in which a cyclic or acyclic structure constituting a matrix portion of the molecule of said dissolution inhibitor contains at least one lone pair-containing portion which can provide a hydrogen bond sufficient to shift and gather an alkali-soluble moiety of said base resin to and on a side of said molecule of the dissolution inhibitor compound. The resist composition can exhibit both excellent sensitivity and resolution and accordingly can be utilized in the formation of very fine resist patterns in a lithographic process. A method for forming such resist patterns is also disclosed.

    摘要翻译： 一种新颖的化学增幅抗蚀剂组合物，其包含碱溶性基础树脂，光致酸产生剂和溶解抑制剂，其中构成所述溶解抑制剂分子的基质部分的环状或非环状结构含有至少一个含有孤对的部分 其可以提供足以将所述基础树脂的碱溶性部分移动并收集在所述溶解抑制剂化合物的所述分子的一侧上和在所述分子的一侧上的氢键。 抗蚀剂组合物可以表现出优异的灵敏度和分辨率，因此可以用于在光刻工艺中形成非常精细的抗蚀剂图案。 还公开了形成这种抗蚀剂图案的方法。

    Chemical amplification resist compositions and process for the formation of resist patterns
    6.
    发明授权
    Chemical amplification resist compositions and process for the formation of resist patterns 失效
    化学放大抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US06200724B1

    公开(公告)日：2001-03-13

    申请号：US08715880

    申请日：1996-09-19

    申请人： Takahisa Namiki ,  Ei Yano ,  Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu

    发明人： Takahisa Namiki ,  Ei Yano ,  Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu

    IPC分类号： G03C173

    CPC分类号： G03F7/0045 ,  G03F7/039

    摘要： A novel chemical amplification resist composition which comprises an alkali-soluble base resin, a photoacid generator and a dissolution inhibitor and in which a cyclic or acyclic structure constituting a matrix portion of the molecule of said dissolution inhibitor contains at least one lone pair-containing portion which can provide a hydrogen bond sufficient to shift and gather an alkali-soluble moiety of said base resin to and on a side of said molecule of the dissolution inhibitor compound. The resist composition can exhibit both excellent sensitivity and resolution and accordingly can be utilized in the formation of very fine resist patterns in a lithographic process. A method for forming such resist patterns is also disclosed.

    摘要翻译： 一种新颖的化学增幅抗蚀剂组合物，其包含碱溶性基础树脂，光致酸产生剂和溶解抑制剂，其中构成所述溶解抑制剂分子的基质部分的环状或非环状结构含有至少一个含有孤对的部分 其可以提供足以将所述基础树脂的碱溶性部分移动并收集在所述溶解抑制剂化合物的所述分子的一侧上和在所述分子的一侧上的氢键。 抗蚀剂组合物可以表现出优异的灵敏度和分辨率，因此可用于在光刻工艺中形成非常精细的抗蚀剂图案。 还公开了形成这种抗蚀剂图案的方法。

    Resist compositions for forming resist patterns
    9.
    发明授权
    Resist compositions for forming resist patterns 失效
    用于形成抗蚀剂图案的抗蚀剂组合物

    公开(公告)号：US5962191A

    公开(公告)日：1999-10-05

    申请号：US132891

    申请日：1998-08-12

    申请人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu

    发明人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu

    IPC分类号： G03F7/027 ,  C08F20/52 ,  C08F220/04 ,  C08F220/06 ,  C08F220/10 ,  C08F220/18 ,  C08F220/56 ,  C08K5/00 ,  C08L33/02 ,  C08L33/04 ,  C08L33/10 ,  C08L33/24 ,  C08L33/26 ,  G03F7/012 ,  G03F7/038 ,  H01L21/027 ,  H01L21/312 ,  G03C1/725

    CPC分类号： G03F7/0125 ,  Y10S430/111 ,  Y10S430/128

    摘要： The negative-working resist composition which comprises a (meth)acrylate copolymer comprising (a) a vinyl monomer unit which contains in a side chain thereof at least one carbon--carbon double bond which does not concern itself with any polymerization reaction, but is able to be crosslinked with a crosslinking agent, (b) an acrylamide or methacrylamide monomer unit, (c) an acrylic acid or methacrylic acid monomer unit and (d) an acrylic acid or methacrylic acid adamantyl monomer unit as well as a crosslinking agent capable of being decomposed upon exposure to a patterning radiation and then causing crosslinking of said copolymer upon heating. The resist composition is particularly suitable for excimer laser lithography using an aqueous basic solution as a developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.

    摘要翻译： 负极抗蚀剂组合物，其包含（甲基）丙烯酸酯共聚物，其包含（a）乙烯基单体单元，其侧链含有至少一个不涉及任何聚合反应的碳 - 碳双键，但是能够 与交联剂交联，（b）丙烯酰胺或甲基丙烯酰胺单体单元，（c）丙烯酸或甲基丙烯酸单体单元和（d）丙烯酸或甲基丙烯酸金刚烷基单体单元以及能够 在暴露于图案化辐射下分解，然后在加热时引起所述共聚物的交联。 抗蚀剂组合物特别适合于使用碱性水溶液作为显影剂的准分子激光光刻，并且所形成的抗蚀剂图案可以表现出高灵敏度和优异的耐干蚀刻性而不溶胀。